Analog Devices OP27AZ, OP27FP, OP27GP, OP27EJ, OP27EP Datasheet

a		Low-Noise, Precision
		Operational Amplifier
		OP27

FEATURES

Low Noise: 80 nV p-p (0.1 Hz to 10 Hz), 3 nV/√Hz Low Drift: 0.2 V/ C

High Speed: 2.8 V/ s Slew Rate, 8 MHz Gain

Bandwidth

Low VOS: 10 V

Excellent CMRR: 126 dB at VCM of ±11 V High Open-Loop Gain: 1.8 Million

Fits 725, OP07, 5534A Sockets Available in Die Form

GENERAL DESCRIPTION

The OP27 precision operational amplifier combines the low offset and drift of the OP07 with both high speed and low noise. Offsets down to 25 µV and drift of 0.6 µV/°C maximum make the OP27 ideal for precision instrumentation applications. Exceptionally low noise, en = 3.5 nV/√Hz, at 10 Hz, a low 1/f noise corner frequency of 2.7 Hz, and high gain (1.8 million), allow accurate high-gain amplification of low-level signals. A gain-bandwidth product of 8 MHz and a 2.8 V/µsec slew rate provides excellent dynamic accuracy in high-speed, dataacquisition systems.

A low input bias current of ± 10 nA is achieved by use of a bias-current-cancellation circuit. Over the military temperature range, this circuit typically holds IB and IOS to ±20 nA and 15 nA, respectively.

The output stage has good load driving capability. A guaranteed swing of ± 10 V into 600 Ω and low output distortion make the OP27 an excellent choice for professional audio applications.

(Continued on page 7)

PIN CONNECTIONS

	TO-99
	(J-Suffix)
	BAL
BAL 1	OP27	V+
–IN 2		OUT
+IN 3		NC
	4V– (CASE)

NC = NO CONNECT

8-Pin Hermetic DIP (Z-Suffix)

Epoxy Mini-DIP (P-Suffix) 8-Pin SO (S-Suffix)

V	TRIM	1	8	V	TRIM
OS			OP27	OS
				V+
	–IN	2	7
	+IN	3	6	OUT
	V–	4	5	NC
		NC = NO CONNECT

								V+
R3	1	8	R4	C2
Q6
						Q22		Q46
	VOS ADJ.						C1
R1*			R2*	R23	R24
				Q21
				Q23	Q24		R9
							Q20	Q19
Q1A	Q1B	Q2B	Q2A				R12	OUTPUT
NONINVERTING					R5	C3	C4
INPUT (+)
Q3
INVERTING			Q11	Q12			Q26	Q45
INPUT (–)
				Q27	Q28
*R1 AND R2 ARE PERMANENTLY
ADJUSTED AT WAFER TEST FOR
MINIMUM OFFSET VOLTAGE.
								V–

Figure 1. Simplified Schematic

REV. A

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: [phone]	www.analog.com
Fax: [phone]	© Analog Devices, Inc., 2002

OP27–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (@ VS = ±15 V, TA = 25 C, unless otherwise noted.)

				OP27A/E				OP27F		OP27C/G
Parameter	Symbol	Conditions		Min	Typ	Max	Min	Typ	Max	Min	Typ	Max	Unit
INPUT OFFSET													µV
VOLTAGE1	VOS				10	25		20	60		30	100
LONG-TERM VOS													µV/MO
STABILITY2, 3	VOS/Time				0.2	1.0		0.3	1.5		0.4	2.0
INPUT OFFSET					7	35		9	50		12	75	nA
CURRENT	IOS
INPUT BIAS					± 10	± 40		± 12	± 55		± 15	± 80
CURRENT	IB												nA
INPUT NOISE													µV p-p
VOLTAGE3, 4	en p-p	0.1 Hz to 10 Hz			0.08	0.18		0.08	0.18		0.09	0.25
INPUT NOISE	en	fO = 10 Hz			3.5	5.5		3.5	5.5		3.8	8.0	nV/√Hz
Voltage Density3		fO = 30 Hz			3.1	4.5		3.1	4.5		3.3	5.6	nV/√Hz
		fO = 1000 Hz			3.0	3.8		3.0	3.8		3.2	4.5	nV/√Hz
INPUT NOISE	in	fO = 10 Hz			1.7	4.0		1.7	4.0		1.7		pA/√Hz
Current Density3, 5		fO = 30 Hz			1.0	2.3		1.0	2.3		1.0		pA/√Hz
		fO = 1000 Hz			0.4	0.6		0.4	0.6		0.4	0.6	pA/√Hz
INPUT
RESISTANCE													MΩ
Differential-Mode6	RIN			1.3	6		0.94	5		0.7	4
Common-Mode	RINCM				3			2.5			2		GΩ
INPUT VOLTAGE				± 11.0	± 12.3		± 11.0	± 12.3		± 11.0	± 12.3
RANGE	IVR												V
COMMON-MODE		VCM = ± 11 V
REJECTION RATIO	CMRR			114	126		106	123		100	120		dB
POWER SUPPLY	PSRR	VS	= ± 4 V										µV/V
REJECTION RATIO		to ± 18 V			1	10		1	10		2	20
LARGE-SIGNAL	AVO	RL ≥ 2 kΩ,
VOLTAGE GAIN		VO	= ± 10 V	1000	1800		1000	1800		700	1500		V/mV
		RL	≥ 600 Ω,
		VO = ± 10 V		800	1500		800	1500		600	1500		V/mV
OUTPUT			≥ 2 kΩ	± 12.0	± 13.8		± 12.0	± 13.8		± 11.5	± 13.5
VOLTAGE SWING	VO	RL											V
		RL	≥ 600 Ω	± 10.0	± 11.5		± 10.0	± 11.5		± 10.0	± 11.5		V
SLEW RATE7	SR	RL ≥ 2 kΩ		1.7	2.8		1.7	2.8		1.7	2.8		V/µs
GAIN
BANDWIDTH
PRODUCT7	GBW			5.0	8.0		5.0	8.0		5.0	8.0		MHz
OPEN-LOOP
OUTPUT													Ω
RESISTANCE	RO	VO = 0, IO = 0			70			70			70
POWER
CONSUMPTION	Pd	VO			90	140		90	140		100	170	mW
OFFSET
ADJUSTMENT		RP = 10 kΩ			± 4.0			± 4.0			± 4.0
RANGE													mV

NOTES

1Input offset voltage measurements are performed ~ 0.5 seconds after application of power. A/E grades guaranteed fully warmed up.

2Long-term input offset voltage stability refers to the average trend line of VOS versus. Time over extended periods after the first 30 days of operation. Excluding the initial hour of operation, changes in VOS during the first 30 days are typically 2.5 V. Refer to typical performance curve.

3Sample tested.

4See test circuit and frequency response curve for 0.1 Hz to 10 Hz tester. 5See test circuit for current noise measurement.

6Guaranteed by input bias current.

7Guaranteed by design.

–2–

REV. A

									OP27
ELECTRICAL CHARACTERISTICS (@ VS = ±15 V, –55 C ≤ TA ≤ 125 C, unless otherwise noted.)
				OP27A			OP27C
Parameter	Symbol	Conditions	Min	Typ	Max	Min	Typ	Max	Unit
INPUT OFFSET									µV
VOLTAGE1	VOS			30	60		70	300
AVERAGE INPUT	TCVOS2
OFFSET DRIFT									µV/°C
	3			0.2	0.6		4	1.8
	TCVOSn
INPUT OFFSET
CURRENT	IOS			15	50		30	135	nA
INPUT BIAS				± 20	± 60		± 35	± 150
CURRENT	IB								nA
INPUT VOLTAGE			± 10.3	± 11.5		± 10.2	± 11.5
RANGE	IVR								V
COMMON-MODE		VCM = ± 10 V
REJECTION RATIO	CMRR		108	122		94	118		dB
POWER SUPPLY		VS = ± 4.5 V to ± 18 V							µV/V
REJECTION RATIO	PSRR			2	16		4	51
LARGE-SIGNAL		RL ≥ 2 kΩ, VO = ± 10 V
VOLTAGE GAIN	AVO		600	1200		300	800		V/mV
OUTPUT		RL ≥ 2 kΩ	± 11.5	± 13.5		± 10.5	± 13.0
VOLTAGE SWING	VO								V

NOTES

1Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power. A/E grades guaranteed fully warmed up.

2The TCVOS performance is within the specifications unnulled or when nulled with RP = 8 kΩ to 20 kΩ. TCVOS is 100% tested for A/E grades, sample tested for C/F/G grades.

3Guaranteed by design.

REV. A

–3–

OP27

ELECTRICAL CHARACTERISTICS

(@ VS = ±15 V, –25 C¯≤ TA ≤ 85 C for OP27J, OP27Z, 0 C ≤ TA ≤ 70 C for OP27EP, OP27FP, and –40 C ≤ TA ≤ 85 C for OP27GP, OP27GS, unless otherwise noted.)

OP27E

OP27F

OP27G

Parameter

Symbol

Conditions

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

Unit

INPUT ONSET

µV

VOLTAGE

VOS

20

50

40

140

55

220

AVERAGE INPUT

TCVOS1

µV/°C

OFFSET DRIFT

0.2

0.6

0.3

1.3

0 4

1.8

2

0.2

0.6

0.3

1.3

0 4

1.8

µV/°C

TCVOSn

INPUT OFFSET

CURRENT

IOS

10

50

14

85

20

135

nA

INPUT BIAS

± 14

± 60

± 18

± 95

± 25

± 150

CURRENT

IB

nA

INPUT VOLTAGE

± 10.5

± 11.8

± 10.5

± 11.8

± 10.5

± 11.8

RANGE

IVR

V

COMMON-MODE

VCM = ± 10 V

REJECTION RATIO

CMRR

110

124

102

121

96

118

dB

POWER SUPPLY

VS = ± 4.5 V

µV/V

REJECTION RATIO

PSRR

2

15

2

16

2

32

to ± 18 V

LARGE-SIGNAL

RL ≥ 2 kΩ,

VOLTAGE GAIN

AVO

VO = ± 10 V

750

1500

700

1300

450

1000

V/mV

OUTPUT

RL ≥ 2 kΩ

± 11.7

± 13.6

± 11.4

± 13.5

± 11.0

± 13.3

VOLTAGE SWING

VO

V

NOTES

1The TCVOS performance is within the specifications unnulled or when nulled with RP = 8 kΩ to 20 kΩ. TCVOS is 100% tested for A/E grades, sample tested for C/F/G grades.

2Guaranteed by design.

–4–

REV. A

OP27

DICE CHARACTERISTICS

			1. NULL
			2. (–) INPUT
			3. (+) INPUT
			4. V–
			6. OUTPUT
			7. V+
			8. NULL
	DIE SIZE 0.109 0.055 INCH, 5995 SQ. MILS
		(2.77 1.40mm, 3.88 SQ. mm)
WAFER TEST LIMITS (@ VS = ±15 V, TA = 25 C unless otherwise noted.)
			OP27N		OP27G	OP27GR
Parameter	Symbol	Conditions	Limit		Limit	Limit	Unit
INPUT OFFSET VOLTAGE*	VOS		35		60	100	µV Max
INPUT OFFSET CURRENT	IOS		35		50	75	nA Max
INPUT BIAS CURRENT	IB		± 40		± 55	± 80	nA Max
INPUT VOLTAGE RANGE	IVR		± 11		± 11	± 11	V Min
COMMON-MODE REJECTION
RATIO	CMRR	VCM = IVR	114		106	100	dB Min
POWER SUPPLY	PSRR	VS = ± 4 V to ± 18 V	10		10	20	µV/V Max
LARGE-SIGNAL VOLTAGE		RL ≥ 2 kΩ, VO = ± 10 V
GAIN	AVO		1000		1000	700	V/mV Min
	AVO	RL ≥ 600 Ω, VO = ± 10 V	800		800	600	V/mV Min
OUTPUT VOLTAGE SWING	VO	RL ≥ 2 kΩ	± 12.0		± 12.0	+11.5	V Min
	VO	RL2600n	± 10.0		± 10.0	± 10.0	V Min
POWER CONSUMPTION	Pd	VO = 0	140		140	170	mW Max

NOTE

*Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.

REV. A

–5–