Analog Devices OP295GP, OP495GP, OP295GS Datasheet

a		Dual/Quad Rail-to-Rail
		Operational Amplifiers
		OP295/OP495

FEATURES

Rail-to-Rail Output Swing Single-Supply Operation: 3 V to 36 V Low Offset Voltage: 300 V

Gain Bandwidth Product: 75 kHz High Open-Loop Gain: 1,000 V/mV Unity-Gain Stable

Low Supply Current/Per Amplifier: 150 A max

APPLICATIONS

Battery-Operated Instrumentation

Servo Amplifiers

Actuator Drives

Sensor Conditioners

Power Supply Control

GENERAL DESCRIPTION

Rail-to-rail output swing combined with dc accuracy are the key features of the OP495 quad and OP295 dual CBCMOS operational amplifiers. By using a bipolar front end, lower noise and higher accuracy than that of CMOS designs has been achieved. Both input and output ranges include the negative supply, providing the user “zero-in/zero-out” capability. For users of 3.3 V systems such as lithium batteries, the OP295/OP495 is specified for 3 V operation.

Maximum offset voltage is specified at 300 μV for 5 V operation, and the open-loop gain is a minimum of 1000 V/mV. This yields performance that can be used to implement high accuracy systems, even in single-supply designs.

The ability to swing rail-to-rail and supply 15 mA to the load makes the OP295/OP495 an ideal driver for power transistors and “H” bridges. This allows designs to achieve higher efficiencies and to transfer more power to the load than previously possible without the use of discrete components. For applications that require

PIN CONNECTIONS

8-Lead Narrow-Body SO	8-Lead Epoxy DIP
(S Suffix)	(P Suffix)

OUT A	1	8	V+	OUT A	1	OP295	8	V+
ñIN A	2	7	OUT B
				ñIN A				OUT B
+IN A	OP295	6	ñIN B		2		7
	3			+IN A				ñIN B
Vñ	4	5	+IN B		3		6
				Vñ	4		5	+IN B

14-Lead Epoxy DIP	16-Lead SO (300 Mil)
(P Suffix)	(S Suffix)

OUT A	1		14	OUT D
ñIN A	2		13	ñIN D
+IN A	3		12	+IN D
V+	4	OP495	11	Vñ
+IN B	5		10	+IN C
ñIN B	6		9	ñIN C
OUT B	7		8	OUT C

OUT A				OUT D
	1		16
ñIN A				ñIN D
	2		15
+IN A				+IN D
	3		14
V+		OP495		Vñ
	4		13
+IN B		TOP VIEW		+IN C
	5	(Not to Scale)	12
ñIN B				ñIN C
	6		11
OUT B				OUT C
	7		10
NC				NC
	8		9

NC = NO CONNECT

driving inductive loads, such as transformers, increases in efficiency are also possible. Stability while driving capacitive loads is another benefit of this design over CMOS rail-to-rail amplifiers. This is useful for driving coax cable or large FET transistors. The OP295/OP495 is stable with loads in excess of 300 pF.

The OP295 and OP495 are specified over the extended industrial (–40∞C to +125∞C) temperature range. OP295s are available in 8-lead plastic DIP plus SO-8 surface-mount packages. OP495s are available in 14-lead plastic and SO-16 surface-mount packages. Contact your local sales office for MIL-STD-883 data sheet.

REV. C

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: [phone]	www.analog.com
Fax: [phone]	© Analog Devices, Inc., 2002

OP295/OP495–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS (@ VS = 5.0 V, VCM = 2.5 V, TA = 25 C unless otherwise noted.)

Parameter	Symbol		Conditions			Min	Typ	Max	Unit
INPUT CHARACTERISTICS									μV
Offset Voltage	VOS		–40∞C ≤ TA ≤ +125∞C				30	300
								800	μV
Input Bias Current	IB		–40∞C ≤ TA ≤ +125∞C				8	20	nA
							±1	30	nA
Input Offset Current	IOS		–40∞C ≤ TA ≤ +125∞C					±3	nA
								±5	nA
Input Voltage Range	VCM		0 V ≤ VCM ≤ 4.0 V, –40∞C ≤ TA ≤ +125∞C			0		4.0	V
Common-Mode Rejection Ratio	CMRR					90	110		dB
Large Signal Voltage Gain	AVO		RL = 10 kΩ, 0.005 ≤ VOUT ≤ 4.0 V			1,000	10,000		V/mV
			RL = 10 kΩ, –40∞C ≤ TA ≤ +125∞C			500			V/mV
Offset Voltage Drift	VOS/	T					1	5	μV/∞C
OUTPUT CHARACTERISTICS			RL = 100 kΩ to GND
Output Voltage Swing High	VOH					4.98	5.0		V
			RL = 10 kΩ to GND			4.90	4.94		V
			IOUT = 1 mA, –40∞C ≤ TA ≤ +125∞C				4.7		V
Output Voltage Swing Low	VOL		RL = 100 kΩ to GND				0.7	2	mV
			RL = 10 kΩ to GND				0.7	2	mV
			IOUT = 1 mA, –40∞C ≤ TA ≤ +125∞C			±11	90		mV
Output Current	IOUT						±18		mA
POWER SUPPLY			±1.5 V ≤ VS		≤ ±15 V
Power Supply Rejection Ratio	PSRR					90	110		dB
			±1.5 V ≤ VS		≤ ±15 V,
			–40∞C ≤ TA ≤ +125∞C			85			dB
Supply Current Per Amplifier	ISY		VOUT = 2.5 V, RL = •, –40∞C ≤ TA ≤ +125∞C					150	μA
DYNAMIC PERFORMANCE			RL = 10 kΩ						V/μs
Skew Rate	SR						0.03
Gain Bandwidth Product	GBP						75		kHz
Phase Margin	θO						86		Degrees
NOISE PERFORMANCE									μV p-p
Voltage Noise	en p-p		0.1 Hz to 10 Hz				1.5
Voltage Noise Density	en		f	= 1 kHz			51		nV/ Hz
Current Noise Density	in		f	= 1 kHz			<0.1		pA/ Hz
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS (@ VS = 3.0 V, VCM = 1.5 V, TA = 25 C unless otherwise noted.)
Parameter	Symbol		Conditions			Min	Typ	Max	Unit
INPUT CHARACTERISTICS									μV
Offset Voltage	VOS						30	500
Input Bias Current	IB						8	20	nA
Input Offset Current	IOS						±1	±3	nA
Input Voltage Range	VCM		0 V ≤ VCM ≤ 2.0 V, –40∞C ≤ TA ≤ +125∞C			0		2.0	V
Common-Mode Rejection Ratio	CMRR					90	110		dB
Large Voltage Gain	AVO		RL = 10 kΩ				750		V/mV
Offset Voltage Drift	VOS/	T					1		μV/∞C
OUTPUT CHARACTERISTICS			RL = 10 kΩ to GND
Output Voltage Swing High	VOH					2.9			V
Output Voltage Swing Low	VOL		RL = 10 kΩ to GND				0.7	2	mV
POWER SUPPLY			±1.5 V ≤ VS		≤ ±15 V
Power Supply Rejection Ratio	PSRR					90	110		dB
			±1.5 V ≤ VS		≤ ±15 V,
			–40∞C ≤ TA ≤ +125∞C			85			dB
Supply Current Per Amplifier	ISY		VOUT = 1.5 V, RL = •, –40∞C ≤ TA ≤ +125∞C					150	μA
DYNAMIC PERFORMANCE			RL = 10 kΩ						V/μs
Slew Rate	SR						0.03
Gain Bandwidth Product	GBP						75		kHz
Phase Margin	θO						85		Degrees
NOISE PERFORMANCE									μV p-p
Voltage Noise	en p-p		0.1 Hz to 10 Hz				1.6
Voltage Noise Density	en		f = 1 kHz				53		nV/ Hz
Current Noise Density	in		f	= 1 kHz			<0.1		pA/ Hz

Specifications subject to change without notice.

–2–

REV. C

OP295/OP495

ELECTRICAL CHARACTERISTICS (@ VS = ±15.0 V, TA = 25 C unless otherwise noted.)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
INPUT CHARACTERISTICS						μV
Offset Voltage	VOS	–40∞C ≤ TA ≤ +125∞C		30	300
Input Bias Current	IB				800	μV
		VCM = 0 V		7	20	nA
		VCM = 0 V, –40∞C ≤ TA ≤ +125∞C		±1	30	nA
Input Offset Current	IOS	VCM = 0 V			±3	nA
Input Voltage Range	VCM	VCM = 0 V, –40∞C ≤ TA ≤ +125∞C			±5	nA
		–15.0 V ≤ VCM ≤ +13.5 V, –40∞C ≤ TA ≤ +125∞C	–15		13.5	V
Common-Mode Rejection Ratio	CMRR		90	110		dB
Large Signal Voltage Gain	AVO	RL = 10 kΩ	1,000	4,000		V/mV
Offset Voltage Drift	VOS/ T			1		μV/∞C
OUTPUT CHARACTERISTICS		RL = 100 kΩ to GND
Output Voltage Swing High	VOH		14.95			V
		RL = 10 kΩ to GND	14.80			V
Output Voltage Swing Low	VOL	RL = 100 kΩ to GND			–14.95	V
		RL = 10 kΩ to GND	±15	±25	–14.85	V
Output Current	IOUT					mA
POWER SUPPLY		VS = ±1.5 V to ±15 V
Power Supply Rejection Ratio	PSRR		90	110		dB
		VS = ±1.5 V to ±15 V, –40∞C ≤ TA ≤ +125∞C	85			dB
Supply Current	ISY	VO = 0 V, RL = •, VS = ±18 V,				μA
		–40∞C ≤ TA ≤ +125∞C	3 (±1.5)		175
Supply Voltage Range	VS				36 (±18)	V
DYNAMIC PERFORMANCE		RL = 10 kΩ				V/μs
Slew Rate	SR			0.03
Gain Bandwidth Product	GBP			85		kHz
Phase Margin	θO			83		Degrees
NOISE PERFORMANCE						μV p-p
Voltage Noise	en p-p	0.1 Hz to 10 Hz		1.25
Voltage Noise Density	en	f =1 kHz		45		nV/ Hz
Current Noise Density	in	f = 1 kHz		<0.1		pA/ Hz

Specifications subject to change without notice.

REV. C

–3–

OP295/OP495

ABSOLUTE MAXIMUM RATINGS1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±18 V

Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±18 V

Differential Input Voltage2. . . . . . . . . . . . . . . . . . . . . . . . . 36 V

Output Short-Circuit Duration . . . . . . . . . . . . . . . . . Indefinite

Storage Temperature Range

P, S Package . . . . . . . . . . . . . . . . . . . . . . . . –65∞C to +150∞C

Operating Temperature Range

OP295G, OP495G . . . . . . . . . . . . . . . . . . . –40∞C to +125∞C

Junction Temperature Range

P, S Package . . . . . . . . . . . . . . . . . . . . . . . . –65∞C to +150∞C

Lead Temperature Range (Soldering, 60 Sec) . . . . . . . . 300∞C

NOTES

1Absolute maximum ratings apply to packaged parts, unless otherwise noted. 2For supply voltages less than ± 18 V, the absolute maximum input voltage is equal to the supply voltage.

Package Type	JA*	JC	Unit
8-Lead Plastic DIP (P)	103	43	∞C/W
8-Lead SOIC (S)	158	43	∞C/W
14-Lead Plastic DIP (P)	83	39	∞C/W
16-Lead SO (S)	98	30	∞C/W

*θJA is specified for the worst case conditions, i.e., θJA is specified for device in socket for cerdip, P-DIP, and LCC packages; θJA is specified for device soldered in circuit board for SOIC package.

ORDERING GUIDE

	Temperature	Package	Package
Model	Range	Description	Option
OP295GP	–40∞C to +125∞C	8-Lead Plastic DIP	N-8
OP295GS	–40∞C to +125∞C	8-Lead SOIC	SO-8
OP495GP	–40∞C to +125∞C	14-Lead Plastic DIP	N-14
OP495GS	–40∞C to +125∞C	16-Lead SOL	R-16

Typical Performance Characteristics

SUPPLY CURRENT ñ A

140

120

100		VS = 36V

VS = 5V

80

VS = 3V

60

40

20
ñ50	ñ25	0	25	50	75	100

TEMPERATURE ñ C

ñ V	15.2				VS =	15V	RL = 100k
	15.0
SWING
	14.8						RL = 10k
OUTPUT	14.6
	14.4						RL = 2k
+	14.2
ñ V	ñ14.4
SWING	ñ14.6						RL = 2k
							RL = 10k
	ñ14.8
ñ OUTPUT
	ñ15.0						RL = 100k
	ñ15.2
	ñ50	ñ25	0	25	50		75	100
			TEMPERATURE ñ C

TPC 1. Supply Current Per Amplifier vs. Temperature

TPC 2. Output Voltage Swing vs. Temperature

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP295/OP495 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

–4–

REV. C