EMG2DXV5T1,
EMG5DXV5T1
Preferred Devices
Dual Bias Resistor
Transistors
NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT−553 package which is designed for low power surface mount applications.
Features
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•Moisture Sensitivity Level: 1
•Available in 8 mm, 7 inch Tape and Reel
•Lead−Free Solder Plating
•Pb−Free Packages are Available
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating |
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Symbol |
Value |
Unit |
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Collector-Base Voltage |
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VCBO |
50 |
Vdc |
Collector-Emitter Voltage |
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VCEO |
50 |
Vdc |
Collector Current |
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IC |
100 |
mAdc |
THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
Unit |
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Total Device Dissipation |
PD |
230 (Note 1) |
mW |
TA = 25°C |
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338 (Note 2) |
°C/W |
Derate above 25°C |
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1.8 (Note 1) |
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2.7 (Note 2) |
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Thermal Resistance − |
RqJA |
540 (Note 1) |
°C/W |
Junction-to-Ambient |
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370 (Note 2) |
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Thermal Resistance − |
RqJL |
264 (Note 1) |
°C/W |
Junction-to-Lead |
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287 (Note 2) |
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Junction and Storage |
TJ, Tstg |
−55 to +150 |
°C |
Temperature Range |
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Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1.FR−4 @ Minimum Pad
2.FR−4 @ 1.0 x 1.0 inch Pad
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NPN SILICON
BIAS RESISTOR
TRANSISTORS
(3) |
(2) |
(1) |
R1 |
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R1 |
R2 |
R2 |
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DTr2 |
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DTr1 |
(4) |
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(5) |
5 |
SOT−553 |
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CASE 463B
1
MARKING
DIAGRAM
5
XX M G
G
1
xx= Device Code xx= UF (EMG5)
UP (EMG2)
M = Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet.
Preferred devices are recommended choices for future use and best overall value.
♥ Semiconductor Components Industries, LLC, 2005 |
1 |
Publication Order Number: |
October, 2005 − Rev. 0 |
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EMG5DXV5/D |
EMG2DXV5T1, EMG5DXV5T1
DEVICE MARKING AND RESISTOR VALUES
Device |
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Package |
Marking |
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R1 (K) |
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R2 (K) |
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EMG2DXV5T1 |
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SOT−553 |
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UP |
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47 |
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47 |
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EMG5DXV5T1 |
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SOT−553 |
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UF |
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10 |
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47 |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) |
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Characteristic |
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Symbol |
Min |
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Typ |
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Max |
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Unit |
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OFF CHARACTERISTICS (Q1 & Q2) |
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Collector-Base Cutoff Current (VCB = 50 V, IE = 0) |
ICBO |
− |
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− |
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100 |
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nAdc |
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Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) |
ICEO |
− |
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− |
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500 |
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nAdc |
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Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0)EMG2DXV5T1 |
IEBO |
− |
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− |
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0.1 |
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mAdc |
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EMG5DXV5T1 |
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− |
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− |
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0.2 |
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Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) |
V(BR)CBO |
50 |
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− |
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− |
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Vdc |
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Collector-Emitter Breakdown Voltage (Note 3) |
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V(BR)CEO |
50 |
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− |
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− |
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Vdc |
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(IC = 2.0 mA, IB = 0) |
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ON CHARACTERISTICS (Q1 & Q2) (Note 3) |
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DC Current Gain (VCE = 10 V, IC = 5.0 mA) |
EMG2DXV5T1 |
hFE |
80 |
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140 |
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− |
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EMG5DXV5T1 |
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80 |
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140 |
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− |
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Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) |
VCE(sat) |
− |
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− |
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0.25 |
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Vdc |
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Output Voltage (on) |
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VOL |
− |
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− |
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0.2 |
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Vdc |
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(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) |
EMG2DXV5T1 |
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(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) |
EMG5DXV5T1 |
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− |
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− |
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0.2 |
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Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) |
VOH |
4.9 |
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− |
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− |
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Vdc |
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Input Resistor |
EMG2DXV5T1 |
R1 |
32.9 |
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47 |
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61.1 |
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kW |
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EMG5DXV5T1 |
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7.0 |
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10 |
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13 |
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Resistor Ratio |
EMG2DXV5T1 |
R1/R2 |
0.8 |
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1.0 |
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1.2 |
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EMG5DXV5T1 |
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0.17 |
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0.21 |
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0.25 |
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3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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350 |
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(mW) |
300 |
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DISSIPATION |
250 |
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200 |
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150 |
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, POWER |
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100 |
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50 |
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RqJA = 370°C/W |
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D |
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P |
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0 |
0 |
50 |
100 |
150 |
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−50 |
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TA, AMBIENT TEMPERATURE (°C) |
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Figure 1. Derating Curve
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2
EMG2DXV5T1, EMG5DXV5T1
TYPICAL ELECTRICAL CHARACTERISTICS — EMG2DXV5T1
(VOLTS |
10 |
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IC/IB = 10 |
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VOLTAGE |
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1 |
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COLLECTOR |
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TA = −25°C |
25°C |
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75°C |
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, MAXIMUM |
0.1 |
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CE(sat) |
0.01 |
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0 |
20 |
40 |
50 |
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V |
IC, COLLECTOR CURRENT (mA)
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Figure 2. VCE(sat) versus IC |
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1 |
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f = 1 MHz |
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IE = 0 V |
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0.8 |
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TA |
= 25 |
° |
C |
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(pF) |
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, CAPACITANCE |
0.6 |
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0.4 |
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ob |
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C |
0.2 |
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0 |
0 |
10 |
20 |
30 |
40 |
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50 |
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
(NORMALIZED) |
1000 |
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VCE = 10 V |
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TA = 75°C |
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25°C |
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−25°C |
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GAIN |
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100 |
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, DC CURRENT |
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FE |
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h |
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10 1 |
10 |
100 |
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
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100 |
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25°C |
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75°C |
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(mA) |
10 |
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TA = −25°C |
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CURRENT |
1 |
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COLLECTOR |
0.1 |
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0.01 |
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, |
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C |
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I |
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VO = 5 V |
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0.001 |
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0 |
2 |
4 |
6 |
8 |
10 |
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Vin, INPUT VOLTAGE (VOLTS) |
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Figure 5. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
100
VO = 0.2 V
TA = −25°C 25°C
10 |
75°C |
1
0.1
0 |
10 |
20 |
30 |
40 |
50 |
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
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3