NTB125N02R
NTB125N02R, NTP125N02R
Power MOSFET
125 A, 24 V N-Channel
TO-220, D2PAK
Features
•Planar HD3e Process for Fast Switching Performance
•Body Diode for Low trr and Qrr and Optimized for Synchronous Operation
•Low Ciss to Minimize Driver Loss
•Optimized Qgd and RDS(on) for Shoot−through Protection
•Low Gate Charge
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter |
Symbol |
Value |
Unit |
|
|
|
|
Drain−to−Source Voltage |
VDSS |
24 |
Vdc |
Gate−to−Source Voltage − Continuous |
VGS |
±20 |
Vdc |
Thermal Resistance − Junction−to−Case |
R JC |
1.1 |
°C/W |
Total Power Dissipation @ TC = 25°C |
PD |
113.6 |
W |
Drain Current − |
|
|
|
Continuous @ TC = 25°C, Chip |
ID |
125 |
A |
Continuous @ TC = 25°C, Limited by Package |
ID |
120.5 |
A |
Continuous @ TA = 25°C, Limited by Wires |
ID |
95 |
A |
Single Pulse (tp = 10 s) |
ID |
250 |
A |
Thermal Resistance − |
|
|
°C/W |
Junction−to−Ambient (Note 1) |
R JA |
46 |
|
Total Power Dissipation @ TA = 25°C |
PD |
2.72 |
W |
Drain Current − Continuous @ T A = 25°C |
ID |
18.6 |
A |
Thermal Resistance − |
|
|
°C/W |
Junction−to−Ambient (Note 2) |
R JA |
63 |
|
Total Power Dissipation @ TA = 25°C |
PD |
1.98 |
W |
Drain Current − Continuous @ T A = 25°C |
ID |
15.9 |
A |
Operating and Storage Temperature Range |
TJ, Tstg |
−55 to |
°C |
|
|
150 |
|
|
|
|
|
Single Pulse Drain−to−Source Avalanche |
EAS |
120 |
mJ |
Energy − Starting T J = 25°C |
|
|
|
(VDD = 50 Vdc, VGS = 10 Vdc, IL = 15.5 Apk, |
|
|
|
L = 1 mH, RG = 25 ) |
|
|
|
Maximum Lead Temperature for Soldering |
TL |
260 |
°C |
Purposes, 1/8″ from Case for 10 Seconds |
|
|
|
|
|
|
|
1.When surface mounted to an FR4 board using 1 inch pad size,
(Cu Area 1.127 in2).
2.When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.412 in2).
PIN ASSIGNMENT
PIN |
FUNCTION |
|
|
1 |
Gate |
|
|
2 |
Drain |
|
|
3 |
Source |
|
|
4 |
Drain |
|
|
http://onsemi.com
125 AMPERES, 24 VOLTS
RDS(on) = 3.7 m (Typ)
D
G
S
|
|
MARKING |
|
|
|
DIAGRAMS |
|
4 |
TO−220AB |
|
|
CASE 221A |
125N2R |
||
|
|||
|
STYLE 5 |
YWW |
1 2 3 |
|
|
4 |
D2PAK |
125N2 |
CASE 418AA |
|
|
|
YWW |
|
|
STYLE 2 |
|
2 |
|
|
|
|
|
1 3 |
|
|
125N2 = Specific Device Code |
||
Y |
= Year |
|
WW = Work Week |
||
ORDERING INFORMATION |
||
Device |
Package |
Shipping² |
NTB125N02R |
D2PAK |
50 Units/Rail |
NTB125N02RT4 |
D2PAK |
800/Tape & Reel |
NTP125N02R |
TO−220AB |
50 Units/Rail |
²For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2003 |
1 |
Publication Order Number: |
October, 2003 − Rev. 4 |
|
NTB125N02R/D |
NTB125N02R, NTP125N02R
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)
Characteristics |
Symbol |
Min |
Typ |
Max |
Unit |
|
|
|
|
|
|
|
|
OFF CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
Drain−to−Source Breakdown Voltage (Note 3) |
V(BR)DSS |
|
|
|
Vdc |
|
(VGS = 0 Vdc, ID = 250 Adc) |
|
|
25 |
28 |
− |
mV/°C |
Temperature Coefficient (Positive) |
|
|
− |
15 |
− |
|
|
|
|
|
|
|
|
Zero Gate Voltage Drain Current |
|
IDSS |
|
|
|
Adc |
(VDS = 20 Vdc, VGS = 0 Vdc) |
|
|
− |
− |
1.5 |
|
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C) |
|
− |
− |
10 |
|
|
Gate−Body Leakage Current |
|
IGSS |
|
|
|
nAdc |
(VGS = ±20 Vdc, VDS = 0 Vdc) |
|
|
− |
− |
±100 |
|
ON CHARACTERISTICS (Note 3) |
|
|
|
|
|
|
|
|
|
|
|
|
|
Gate Threshold Voltage (Note 3) |
|
VGS(th) |
|
|
|
Vdc |
(VDS = VGS, ID = 250 Adc) |
|
|
1.0 |
1.5 |
2.0 |
mV/°C |
Threshold Temperature Coefficient (Negative) |
|
− |
5.0 |
− |
||
|
|
|
|
|
|
|
Static Drain−to−Source On−Resistance (Note 3) |
RDS(on) |
|
|
|
m |
|
(VGS = 10 Vdc, ID = 110 Adc) |
|
|
− |
3.7 |
− |
|
(VGS = 4.5 Vdc, ID = 55 Adc) |
|
|
− |
4.9 |
− |
|
(VGS = 10 Vdc, ID = 20 Adc) |
|
|
− |
3.7 |
4.6 |
|
(VGS = 4.5 Vdc, ID = 20 Adc) |
|
|
− |
4.7 |
6.2 |
|
Forward Transconductance (Note 3) |
|
gFS |
|
|
|
Mhos |
(VDS = 10 Vdc, ID = 15 Adc) |
|
|
− |
44 |
− |
|
DYNAMIC CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
Input Capacitance |
|
Ciss |
− |
2710 |
3440 |
pF |
Output Capacitance |
(VDS = 20 Vdc, VGS = 0 V, f = 1 MHz) |
Coss |
− |
1105 |
1670 |
|
Transfer Capacitance |
|
Crss |
− |
227 |
640 |
|
SWITCHING CHARACTERISTICS (Note 4) |
|
|
|
|
|
|
|
|
|
|
|
|
|
Turn−On Delay Time |
|
td(on) |
− |
11 |
22 |
ns |
Rise Time |
(VGS = 10 Vdc, VDD = 10 Vdc, |
tr |
− |
39 |
80 |
|
Turn−Off Delay Time |
ID = 40 Adc, RG = 3 ) |
td(off) |
− |
27 |
40 |
|
Fall Time |
|
tf |
− |
21 |
40 |
|
|
|
|
|
|
|
|
Gate Charge |
|
QT |
− |
23.6 |
28 |
nC |
|
(VGS = 4.5 Vdc, ID = 40 Adc, |
|
|
|
|
|
|
Q1 |
− |
5.1 |
− |
|
|
|
VDS = 10 Vdc) (Note 3) |
|
||||
|
Q2 |
− |
11 |
− |
|
|
|
|
|
||||
SOURCE−DRAIN DIODE CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
Forward On−Voltagee |
(IS = 20 Adc, VGS = 0 Vdc) (Note 3) |
VSD |
− |
0.82 |
1.2 |
Vdc |
|
(IS = 55 Adc, VGS = 0 Vdc) |
|
− |
0.99 |
− |
|
|
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C) |
|
− |
0.65 |
− |
|
Reverse Recovery Time |
|
trr |
− |
36.5 |
− |
ns |
|
(IS = 30 Adc, VGS = 0 Vdc, |
ta |
− |
17.7 |
− |
|
|
dIS/dt = 100 A/ s) (Note 3) |
tb |
− |
18.8 |
− |
|
Reverse Recovery Stored Charge |
|
QRR |
− |
0.024 |
− |
C |
3.Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
4.Switching characteristics are independent of operating junction temperatures.
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