Microchip Technology Inc 93LC76-SN, 93LC76-P, 93LC86T-I-SN, 93LC86T-I-P, 93LC86T-SN Datasheet

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Microchip Technology Inc 93LC76-SN, 93LC76-P, 93LC86T-I-SN, 93LC86T-I-P, 93LC86T-SN Datasheet

93LC76/86

8K/16K 2.5V Microwire Serial EEPROM

FEATURES

•Single supply with programming operation down to 2.5V

•Low power CMOS technology

-1 mA active current typical

-5 A standby current (typical) at 3.0V

•ORG pin selectable memory conﬁguration 1024 x 8 or 512 x 16 bit organization (93LC76) 2048 x 8 or 1024 x 16 bit organization (93LC86)

•Self-timed ERASE and WRITE cycles (including auto-erase)

•Automatic ERAL before WRAL

•Power on/off data protection circuitry

•Industry standard 3-wire serial I/O

•Device status signal during ERASE/WRITE cycles

•Sequential READ function

•10,000,000 ERASE/WRITE cycles guaranteed

•Data retention > 200 years

•8-pin PDIP/SOIC package

•Temperature ranges available

-	Commercial (C)	0°C	to	+70°C
-	Industrial (I)	-40°C	to	+85°C

DESCRIPTION

The Microchip Technology Inc. 93LC76/86 are 8K and 16K low voltage serial Electrically Erasable PROMs. The device memory is conﬁgured as x8 or x16 bits depending on the ORG pin setup. Advanced CMOS technology makes these devices ideal for low power non-volatile memory applications. These devices also have a Program Enable (PE) pin to allow the user to write protect the entire contents of the memory array. The 93LC76/86 is available in standard 8-pin DIP and 8-pin surface mount SOIC packages.

PACKAGE TYPES

DIP Package

CS	1	93LC76/86	8	VCC


DO	4		5	VSS
CLK	2		7	PE
CLK	2		7	PE
DI	3		6	ORG

SOIC Package

	1	93LC76/86	8	VSS
DO	4	93LC76/86	5	VSS
CS	2		7	VCC
CLK	2		7	PE
	3		6	ORG
DI	3		6	ORG

BLOCK DIAGRAM

	VCC VSS
	Memory	Address
	Array	Decoder
		Address
		Counter
	Data	Output
	Register	Output	DO
	Register	Buffer	DO
		Buffer
DI
	Mode
PE	Decode
PE	Logic
CS	Logic
CS
CLK	Clock
CLK	Generator
	Generator

Microwire is a registered trademark of National Semiconductor Incorporated.

1996 Microchip Technology Inc.

Preliminary

DS21131C-page 1

93LC76/86

1.0ELECTRICAL CHARACTERISTICS

1.1Maximum Ratings*

VCC ...................................................................................		7.0V
All inputs and outputs w.r.t. VSS ...............	-0.6V to Vcc +1.0V
Storage temperature .....................................		-65˚C to +150˚C
Ambient temp. with power applied.................		-65˚C to +125˚C
Soldering temperature of leads (10 seconds)		............. +300˚C
ESD protection on all pins................................................		4 kV

*Notice: Stresses above those listed under “Maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this speciﬁcation is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability

TABLE 1-1: PIN FUNCTION TABLE

Name	Function


CS	Chip Select
CLK	Serial Data Clock
DI	Serial Data Input
DO	Serial Data Output
VSS	Ground
ORG	Memory Conﬁguration
PE	Program Enable
VCC	Power Supply

TABLE 1-2:	DC CHARACTERISTICS

1.2AC Test Conditions

AC Waveform:
VLO = 2.0V
VHI = Vcc - 0.2V	(Note 1)
VHI = 4.0V for	(Note 2)

Timing Measurement Reference Level

Input		0.5 VCC
Output		0.5 VCC
Note 1:	For VCC ≤ 4.0V
2:	For VCC > 4.0V

Applicable over recommended operating ranges shown below unless otherwise noted:

VCC = +2.5V to +6.0V
Commercial (C): Tamb =		0˚C to +70˚C
Industrial (I):	Tamb = -40˚C to +85˚C
Parameter			Symbol	Min.	Max.	Units	Conditions


High level input voltage			VIH1	2.0	VCC +1	V	VCC ≥ 2.7V
			VIH2	0.7 VCC	VCC +1	V	VCC < 2.7V
Low level input voltage			VIL1	-0.3	0.8	V	VCC ≥ 2.7V
			VIL2	-0.3	0.2 VCC	V	VCC < 2.7V
Low level output voltage			VOL1	—	0.4	V	I OL = 2.1 mA; VCC = 4.5V
			VOL2	—	0.2	V	I OL =100 A; VCC = VCC Min.
High level output voltage			VOH1	2.4	—	V	I OH = -400 A; VCC = 4.5V
			VOH2	VCC-0.2	—	V	I OH = -100 A; VCC = VCC Min.
Input leakage current			ILI	-10	10	A	VIN = 0.1V to VCC
Output leakage current			ILO	-10	10	A	VOUT = 0.1V to VCC
Pin capacitance			CINT	—	7	pF	(Note Note:)
(all inputs/outputs)							Tamb = +25˚C, FCLK = 1 MHz
Operating current			ICC write	—	3	mA	V CC = 5.5V
			ICC read	—	1	mA	FCLK = 3 MHz; VCC = 5.5V
					500	A	FCLK = 1 MHz; VCC = 3.0V
Standby current			ICCS	—	100	A	CLK = CS = 0V; VCC = 5.5V
					30	A	CLK = CS = 0V; VCC = 3.0V

Note: This parameter is periodically sampled and not 100% tested.

DS21131C-page 2

Preliminary

1996 Microchip Technology Inc.

93LC76/86

TABLE 1-3:	AC CHARACTERISTICS

Applicable over recommended operating ranges shown below unless otherwise noted:
VCC = +2.5V to +6.0V
Commercial (C): Tamb =		0˚C to +70˚C
Industrial (I):	Tamb = -40˚C to +85˚C
Parameter			Symbol	Min.	Max.	Units	Conditions


Clock frequency			FCLK	—	3	MHz	4.5V	≤ VCC ≤ 6.0V
					2	MHz	2.5V	≤ VCC < 4.5V
Clock high time			TCKH	200	—	ns	4.5V	≤ VCC ≤ 6.0V
				300		ns	2.5V	≤ VCC < 4.5V
Clock low time			TCKL	100	—	ns	4.5V	≥ VCC ≤ 6.0V
				200		ns	2.5V	≤ VCC < 4.5V
Chip select setup time			TCSS	50	—	ns	4.5V	≤ VCC ≤ 6.0V, Relative to CLK
				100		ns	2.5V	≤ VCC < 4.5V, Relative to CLK
Chip select hold time			TCSH	0	—	ns
Chip select low time			TCSL	250	—	ns	Relative to CLK
Data input setup time			TDIS	50	—	ns	4.5V	≤ VCC ≤ 6.0V, Relative to CLK
				100		ns	2.5V	≤ VCC <4.5V, Relative to CLK
Data input hold time			TDIH	50	—	ns	4.5V	≤ VCC ≤ 6.0V, Relative to CLK
				100		ns	2.5V	≤ VCC < 4.5V, Relative to CLK
Data output delay time			TPD	—	100	ns	4.5V	≤ VCC ≤ 6.0V, CL = 100 pF
					250	ns	2.5V	≤ VCC < 4.5V, CL = 100 pF
Data output disable time			TCZ	—	100	ns	4.5V	≤ VCC ≤ 6.0V
					500	ns	2.5V	≤ VCC < 4.5V (Note 1)
Status valid time			TSV	—	200	ns	4.5V	≥ VCC ≤ 6.0V, CL = 100 pF
					300	ns	2.5V	≤ VCC <4.5V, CL = 100 pF
Program cycle time			TWC	—	5	ms	ERASE/WRITE mode
			TEC	—	15	ms	ERAL mode
			TWL	—	30	ms	WRAL mode
Endurance			—	10M	—	cycles	25 °C, Vcc = 5.0V, Block Mode
							(Note 2)

Note 1: This parameter is periodically sampled and not 100% tested.

2:This parameter is not tested but guaranteed by characterization. For endurance estimates in a speciﬁc application, please consult the Total Endurance Model which can be found on our BBS or website.

1996 Microchip Technology Inc.

Preliminary

DS21131C-page 3

93LC76/86

TABLE 1-4:

INSTRUCTION SET FOR 93LC76: ORG=1 (1X16 ORGANIZATION)

Instruction

Opcode

Address

Data In

Data Out

Req. CLK

Cycles

READ

A8 A7 A6 A5 A4 A3 A2 A1 A0

—

D15 - D0

EWEN

—

High-Z

ERASE

A8 A7 A6 A5 A4 A3 A2 A1 A0

—

(RDY/BSY)

ERAL

—

(RD Y/BSY)

WRITE

A8 A7 A6 A5 A4 A3 A2 A1 A0

D15 - D0

(RDY/BSY)

WRAL

D15 - D0

(RDY/BSY)

EWDS

0 0 X X X X X X X X

—

High-Z

TABLE 1-5:

INSTRUCTION SET FOR 93LC76: ORG=0 (X8 ORGANIZATIONI

Instruction

Opcode

Address

Data In

Data Out

Req. CLK

Cycles

READ

A9 A8 A7 A6 A5 A4 A3 A2 A1

—

D7 - D0

EWEN

—

High-Z

ERASE

A9 A8 A7 A6 A5 A4 A3 A2 A1

—

(RDY/BSY)

ERAL

—

(RD Y/BSY)

WRITE

A9 A8 A7 A6 A5 A4 A3 A2 A1

D7 - D0

(RDY/BSY)

WRAL

D7 - D0

(RDY/BSY)

EWDS

0 0 X X X X X X X X

—

High-Z

TABLE 1-6:

INSTRUCTION SET FOR 93LC86: ORG=1 (X16 ORGANIZATION)

Instruction

Opcode

Address

Data In

Data Out

Req. CLK

Cycles

READ

A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

—

D15 - D0

EWEN

—

High-Z

ERASE

A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

—

(RDY/BSY)

ERAL

—

(RD Y/BSY)

WRITE

A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

D15 - D0

(RDY/BSY)

WRAL

D15 - D0

(RDY/BSY)

EWDS

0 0 X X X X X X X X

—

High-Z

TABLE 1-7:

INSTRUCTION SET FOR 93LC86: ORG=0 (X8 ORGANIZATION)

Instruction

Opcode

Address

Data In

Data Out

Req. CLK

Cycles

READ

A10

A8 A7 A6 A5 A4 A3 A2 A1

—

D7 - D0

EWEN

—

High-Z

ERASE

A10

A8 A7 A6 A5 A4 A3 A2 A1

—

(RDY/BSY)

ERAL

—

(RD Y/BSY)

WRITE

A10

A8 A7 A6 A5 A4 A3 A2 A1

D7 - D0

(RDY/BSY)

WRAL

D7 - D0

(RDY/BSY)

EWDS

—

High-Z

DS21131C-page 4

Preliminary

1996 Microchip Technology Inc.

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