Microchip Technology Inc 28C17AT-20-L, 28C17AT-15I-SO, 28C17AT-15I-L, 28C17AT-15-SO, 28C17AT-15-L Datasheet

28C17A

16K (2K x 8) CMOS EEPROM

FEATURES

•Fast Read Access Time—150 ns

•CMOS Technology for Low Power Dissipation

-30 mA Active

-100 A Standby

• Fast Byte Write Time—200 s or 1 ms

•Data Retention >200 years

•High Endurance - Minimum 104 Erase/Write Cycles

•Automatic Write Operation

-Internal Control Timer

-Auto-Clear Before Write Operation

-On-Chip Address and Data Latches

•Data Polling; Ready/Busy

•Chip Clear Operation

•Enhanced Data Protection

-VCC Detector

-Pulse Filter

-Write Inhibit

•Electronic Signature for Device Identification

•5-Volt-Only Operation

•Organized 2Kx8 JEDEC Standard Pinout

-28 Pin Dual-In-Line Package

-32-Pin PLCC Package

-28-Pin Thin Small Outline Package (TSOP) 8x20mm

-28-Pin Very Small Outline Package (VSOP) 8x13.4mm

•Available for Extended Temperature Ranges:

-Commercial: 0˚C to +70˚C

-Industrial: -40˚C to +85˚C

DESCRIPTION

PACKAGE TYPES

RDY/BSY		• 1		28	Vcc				RDY/BSY2		32 Vcc	31 WE 30 NC
	NC	2		27	WE		4 A7	3 NC		1 NU
	A7	3		26	NC
	A6	4	DIP/SOIC	25	A8	A6	5						29	A8
	A5	5		24	A9
						A5	6						28	A9
	A4	6		23	NC	A4 7				PLCC			27	NC
	A3	7		22	OE	A3 8							26	NC
	A2	8		21	A10	A2 9							25	OE
	A1	9		20	CE	A1	10						24	A10
						A0	11						23	CE
	A0	10		19	I/O7
						NC	12						22	I/O7
I/O0		11		18	I/O6
						I/O0	13						21	I/O6
I/O1		12		17	I/O5		14	15	16	17	18	19	20
I/O2		13		16	I/O4
							I/O1	I/O2	Vss	NU	I/O3	I/O4	I/O5
	VSS	14		15	I/O3
		• Pin 1 indicator on PLCC on top of package
OE	1													28	A10
NC	2													27	CE
A9	3													26	I/07
A8	4													25	I/06
NC	5													24	I/05
WE	6					TSOP								23	I/04
Vcc	7													22	I/03
RDY/BSY	8													21	Vss
NC	9													20	I/02
A7	10													19	I/01
A6	11													18	I/00
A5	12													17	A0
A4	13													16	A1
A3	14													15	A2
	OE	22										21	A10
	NC	23										20	CE
	A9	24										19	I/O7
	A8	25										18	I/O6
	NC	26				VSOP						17	I/O5
	WE	27										16	I/O4
	VCC	28										15	I/O3
RDY/BSY		1										14	VSS
	NC	2										13	I/O2
	A7	3										12	I/O1
	A6	4										11	I/O0
	A5	5										10	A0
	A4	6										9	A1
	A3	7										8	A2

	The Microchip Technology Inc. 28C17A is a CMOS 16K non-			BLOCK DIAGRAM
								I/O0	I/O7
	volatile electrically Erasable PROM.	The 28C17A	is
	accessed like a static RAM for the read or write cycles without			VSS
	the need of external components. During a “byte write”, the					Data Protection
				VCC
	address and data are latched internally, freeing the micropro-					Circuitry
				CE		Chip Enable/
	cessor address and data bus for other operations. Following
				OE		Output Enable
	the initiation of write cycle, the device will go to a busy state					Control Logic
				WE	Auto Erase/Write		Data	Input/Output
	and automatically clear and write the latched data using an
				Rdy/		Timing	Poll	Buffers
	internal control timer. To determine when the write cycle is			Busy	Program Voltage
	complete, the user has a choice of monitoring the Ready/
						Generation
	Busy output or using Data polling. The Ready/Busy pin is an			A0		Y		Y Gating
	open drain output, which allows easy configuration in wired-
						Decoder
					L
	or systems. Alternatively, Data polling allows the user to read
					a
	the location last written to when the write operation is com-				t
					c
	plete. CMOS design and processing enables this part to be				h	X		16K bit
					e
	used in systems where reduced power consumption and reli-				s	Decoder		Cell Matrix
	ability are required. A complete family of packages is offered			A10
	to provide the utmost flexibility in applications.
	1996 Microchip Technology Inc.							DS11127G-page 1

28C17A

1.0ELECTRICAL CHARACTERISTICS

1.1MAXIMUM RATINGS*

VCC and input voltages w.r.t. VSS .......			-0.6V to + 6.25V
Voltage on		w.r.t. VSS	-0.6V to +13.5V
	OE
Voltage on A9 w.r.t. VSS ......................			-0.6V to +13.5V
Output Voltage w.r.t. VSS ................			-0.6V to VCC+0.6V
Storage temperature ..........................			-65˚C to +125˚C
Ambient temp. with power applied .......			-50˚C to +95˚C

*Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.

TABLE 1-1: PIN FUNCTION TABLE

Name											Function
A0 - A10									Address Inputs
									Chip Enable
			CE
									Output Enable
		OE
									Write Enable
	WE
I/O0 - I/O7									Data Inputs/Outputs
RDY/Busy									Ready/Busy
VCC									+5V Power Supply
VSS									Ground
		NC							No Connect; No Internal Connec-
									tion
		NU							Not Used; No External Connection
									is Allowed

TABLE 1-2:	READ/WRITE OPERATION DC CHARACTERISTICS
					VCC = +5V ±10%
					Commercial (C): Tamb = 0˚C to +70˚C
					Industrial	(I): Tamb = -40˚C to +85˚C
Parameter		Status	Symbol	Min	Max	Units					Conditions
Input Voltages		Logic ‘1’	VIH	2.0	Vcc+1	V
		Logic ‘0’	VIL	-0.1	0.8	V
Input Leakage		—	I LI	-10	10	A			VIN = -0.1V to Vcc +1
Input Capacitance		—	C IN	—	10	pF	V IN = 0V; Tamb = 25˚C;
								f = 1 MHz
Output Voltages		Logic ‘1’	VOH	2.4		V		IOH = -400 A
		Logic ‘0’	VOL		0.45	V	IOL = 2.1 mA
Output Leakage		—	I LO	-10	10	A			VOUT = -0.1V to VCC
								+0.1V
Output Capacitance		—	C OUT	—	12	pF	V IN = 0V; Tamb = 25˚C;
								f = 1 MHz
Power Supply Current, Active		TTL input	ICC	—	30	mA	f = 5 MHz (Note 1)
								VCC = 5.5V;
Power Supply Current, Standby		TTL input	ICC(S)TTL	—	2	mA					= VIH (0˚C to +70˚C)
									CE
		TTL input	ICC(S)TTL		3	mA			CE	= VIH (-40˚C to +85˚C)
		CMOS input	ICC(S)CMOS		100	A				= VCC-0.3 to Vcc +1
								CE

Note 1: AC power supply current above 5MHz: 1mA/MHz.

DS11127G-page 2

1996 Microchip Technology Inc.

28C17A

TABLE 1-3:

READ OPERATION AC CHARACTERISTICS

AC Testing Waveform:

VIH = 2.4V; VIL = 0.45V; VOH = 2.0V; VOL = 0.8V

Output Load:

1 TTL Load + 100 pF

Input Rise and Fall Times:

20 ns

Ambient Temperature:

Commercial (C):

Tamb

=

0˚C to +70˚C

Industrial

(I):

Tamb

=

-40˚C to +85˚C

Parameter

Symbol

28C17A-15

28C17A-20

28C17A-25

Units

Conditions

Min

Max

Min

Max

Min

Max

Address to Output Delay

tACC

—

150

—

200

—

250

ns

OE

=

= VIL

CE

to Output Delay

tCE

—

150

—

200

—

250

ns

OE

= VIL

CE

to Output Delay

tOE

—

70

—

80

—

100

ns

CE

= VIL

OE

or

High to Output

tOFF

0

50

0

55

0

70

ns

CE

OE

Float

Output Hold from Address,

tOH

0

—

0

—

0

—

ns

or

whichever occurs

CE

OE,

first.

Endurance

—

1M

—

1M

—

1M

— cycles

25

°C, Vcc =

5.0V, Block

Mode (Note)

Note: This parameter is not tested but guaranteed by characterization. For endurance estimates in a specific application, please consult the Total Endurance Model which can be obtained on our BBS or website.

FIGURE 1-1: READ WAVEFORMS

Address	VIH	Address Valid
	VIL
	VIH
CE	VIL
			tCE(2)
	VIH
OE							tOFF(1,3)
	VIL
					tOE(2)		tOH
	VOH						High Z
Data	High Z
	VOL						Valid Output
		tACC

VIH

WE

VOL

Notes: (1) tOFF is specified for OE or CE, whichever occurs first

(2)OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE

(3)This parameter is sampled and is not 100% tested

1996 Microchip Technology Inc.

DS11127G-page 3