Microchip Technology Inc 27LV256-30I-VS, 27LV256-30I-SO, 27LV256-30I-L, 27LV256-30-VS, 27LV256-30-P Datasheet

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27LV256

256K (32K x 8) Low-Voltage CMOS EPROM

FEATURES

•Wide voltage range 3.0V to 5.5V

•High speed performance

-200 ns access time available at 3.0V

•CMOS Technology for low power consumption

-8 mA Active current at 3.0V

-20 mA Active current at 5.5V

-100 A Standby current

•Factory programming available

•Auto-insertion-compatible plastic packages

•Auto ID aids automated programming

•Separate chip enable and output enable controls

•High speed “Express” programming algorithm

•Organized 32K x 8: JEDEC standard pinouts

-28-pin Dual-in-line package

-32-pin PLCC package

-28-pin SOIC package

-28-pin VSOP package

-Tape and reel

•Data Retention > 200 years

•Available for the following temperature ranges:

-	Commercial:	0˚C to +70˚C
-	Industrial:	-40˚C to +85˚C

DESCRIPTION

The Microchip Technology Inc. 27LV256 is a low voltage (3.0 volt) CMOS EPROM designed for battery powered applications. The device is organized as a 32K x 8 (32K-Byte) non-volatile memory product. The 27LV256 consumes only 8 mA maximum of active current during a 3.0 volt read operation therefore improving battery performance. This device is designed for very low voltage applications where conventional 5.0 volt only EPROMS can not be used. Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 200 ns at 3.0V. This device allows systems designers the ability to use low voltage non-volatile memory with today’s' low voltage microprocessors and peripherals in battery powered applications.

A complete family of packages is offered to provide the most ﬂexibility in applications. For surface mount applications, PLCC, VSOP or SOIC packaging is available. Tape and reel packaging is also available for PLCC or SOIC packages.

PACKAGE TYPES

PDIP
PDIP	VPP	• 1		28	VCC
	A12	2		27	A14
	A7	3		26	A13
	A6	4		25	A8
	A5	5		24	A9
	A5	5	27LV256	24	A9
	A4	6	27LV256	23	A11
	A4	6		23	A11
	A3	7		22
	A3	7		22	OE
	A2	8		21	A10
	A1	9		20
	A1	9		20	CE
	A0	10		19	O7
	O0	11		18	O6
	O0	11		18	O6
	O1	12		17	O5
	O2	13		16	O4
	VSS	14		15	O3

PLCC	A7	A12	VPP	NU	Vcc	A14	A13
	A7	A12	VPP	NU	Vcc	A14	A13
	4	3	2	1	32	31	30
A6	5						29	A8
A5	6						28	A9
A4	7			27LV256			27	A11
A0	11			27LV256			23	CE
A3	8						26	NC
A2	9						25	OE
A1	10						24	A10
NC	12						22	O7
O0	13						21	O6
	14	15	16	17	18	19	20
	O1	O2	VSS	NU	O3	O4	O5

SOIC

VPP	1		28	VCC
A12	2		27	A14
A7	3		26	A13

A6	4		25	A8

A5	5		24	A9

A4	6	27LV256	23	A11

A3	7		22
				OE
A2	8		21	A10

A1	9		20
				CE
A0	10		19	O7

O0	11		18	O6

O1	12		17	O5
O2	13		16	O4

VSS	14		15	O3

VSOP

OE	22
A11	23
A9	24
A8	25
A13	26	27LV256



A14	27


VCC	28


VPP	1


A12	2



A7	3


A6	4



A5	5
A5	5
A4	6
A3	7

21		A10
20		CE
19	O7
18	O6
17	O5
16	O4
15	O3
14		VSS
13		O2
12	O1
11	O0
10	A0
9	A1
8	A2

1996 Microchip Technology Inc.

DS11020F-page 1

27LV256

1.0ELECTRICAL CHARACTERISTICS

1.1Maximum Ratings*

VCC and input voltages w.r.t. VSS ........	-0.6V to +7.25V
VPP voltage w.r.t. VSS during
programming .........................................	-0.6V to +14V
Voltage on A9 w.r.t. VSS ......................	-0.6V to +13.5V
Output voltage w.r.t. VSS ...............	-0.6V to VCC +1.0V
Storage temperature ..........................	-65˚C to +150˚C
Ambient temp. with power applied .....	-65˚C to +125˚C

*Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this speciﬁcation is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.

TABLE 1-1: PIN FUNCTION TABLE

Name		Function


A0-A14		Address Inputs
		Chip Enable
	CE
		Output Enable
	OE
VPP		Programming Voltage
O0 - O7		Data Output
VCC		+5V or +3V Power Supply
VSS		Ground
	NC	No Connection; No Internal
		Connection
	NU	Not Used; No External Connection Is
		Allowed

TABLE 1-2:

READ OPERATION DC CHARACTERISTICS

VCC = +5V ±10% or 3.0V where indicated

Commercial:

Tamb = 0˚C to +70˚C

Industrial:

Tamb = -40˚C to +85˚C

Parameter

Part*

Status

Symbol

Min.

Max.

Units

Conditions

Input Voltages

all

Logic "1"

VIH

2.0

VCC+1

Logic "0"

VIL

-0.5

0.8

Input Leakage

all

ILI

-10

VIN = 0 to VCC

Output Voltages

all

Logic "1"

VOH

2.4

IOH = -400 A

Logic "0"

VOL

0.45

IOL = 2.1 mA

Output Leakage

all

—

I LO

-10

VOUT = 0V to VCC

Input Capacitance

all

—

C IN

—

V IN = 0V; Tamb = 25°C;

f = 1 MHz

Output Capacitance

all

—

C OUT

—

V OUT = 0V; Tamb = 25°C;

f = 1 MHz

Power Supply Current,

TTL input

ICC1

—

20 @ 5.0V

VCC = 5.5V; VPP = VCC

Active

8 @ 3.0V

f = 1 MHz;

TTL input

ICC2

—

25 @ 5.0V

= VIL;

10 @ 3.0V

IOUT = 0 mA;

VIL = -0.1 to 0.8V;

VIH = 2.0 to VCC;

Note 1

Power Supply Current,

TTL input

ICC(S)

—

1 @ 3.0V

Standby

TTL input

2 @ 3.0V

all

CMOS input

100 @ 3.0V

CE=VCC ± 0.2V

* Parts: C=Commercial Temperature Range I =Industrial Temperature Ranges

Note 1: Typical active current increases .75 mA per MHz up to operating frequency for all temperature ranges.

DS11020F-page 2

1996 Microchip Technology Inc.

27LV256

TABLE 1-3:

READ OPERATION AC CHARACTERISTICS

AC Testing Waveform:

VIH = 2.4V and VIL = 0.45V; VOH = 2.0V VOL = 0.8V

Output Load:

1 TTL Load + 100 pF

Input Rise and Fall Times: 10 ns

Ambient Temperature:

Commercial:

Tamb = 0˚C to +70˚C

Industrial:

Tamb = -40˚C to +85˚C

Parameter

Sym

27HC256-20

27HC256-25

27HC256-30

Units

Conditions

Min

Max

Min

Max

Min

Max

Address to Output Delay

tACC

—

200

—

250

—

300

= VIL

to Output Delay

tCE

—

200

—

250

—

300

= VIL

to Output Delay

tOE

—

100

—

125

—

125

= VIL

to O/P High

tOFF

Impedance

Output Hold from

tOH

—

Address

OE,

whichever goes ﬁrst

FIGURE 1-1:

READ WAVEFORMS

VIH

Address valid

Address

VIL

VIH

VIL

tCE(2)

VIH

VIL

tOFF(1,3)

tOE(2)

tOH

Outputs

VOH

High Z

Valid Output

O0 - O7

VOL

tACC

Notes: (1) tOFF is specified for OE or CE, whichever occurs first

(2)OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE

(3)This parameter is sampled and is not 100% tested.

1996 Microchip Technology Inc.

DS11020F-page 3

27LV256

TABLE 1-4: PROGRAMMING DC CHARACTERISTICS

			Ambient Temperature: Tamb = 25°C ± 5°C
			VCC = 6.5V ± 0.25V, VPP = 13.0V ± 0.25V

Parameter	Status	Symbol	Min	Max.	Units	Conditions


Input Voltages	Logic”1”	VIH	2.0	VCC+1	V
	Logic”0”	VIL	-0.1	0.8	V

Input Leakage	—	I LI	-10	10	A	VIN = 0V to VCC

Output Voltages	Logic”1”	VOH	2.4		V	IOH = -400 A
	Logic”0”	VOL		0.45	V	IOL = 2.1 mA

VCC Current, program & verify	—	I CC2	—	20	mA	Note 1

VPP Current, program	—	I PP2	—	25	mA	Note 1

A9 Product Identiﬁcation	—	VH	11.5	12.5	V

Note 1: VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP.

TABLE 1-5: PROGRAMMING AC CHARACTERISTICS

for Program, Program Verify	AC Testing Waveform:	VIH=2.4V and VIL=0.45V; VOH=2.0V; VOL=0.8V
and Program Inhibit Modes	Output Load:	1 TLL Load + 100pF
	Ambient Temperature:	Tamb=25°C±5°C

VCC= 6.5V ± 0.25V, VPP =13.0V ± 0.25V

			Parameter	Symbol	Min.	Max.	Units	Remarks


Address Set-Up Time				tAS	2	—	s

Data Set-Up Time				tDS	2	—	s

Data Hold Time				tDH	2	—	s

Address Hold Time				tAH	0	—	s

Float Delay (2)				tDF	0	130	ns

VCC Set-Up Time				tVCS	2	—	s

Program Pulse Width (1)				tPW	95	105	s	100 s typical

	Set-Up Time			tCES	2	—	s
CE	Set-Up Time			tCES	2	—	s

	Set-Up Time			tOES	2	—	s
OE	Set-Up Time			tOES	2	—	s

VPP Set-Up Time				tVPS	2	—	s

Data Valid from				tOE	—	100	ns
Data Valid from		OE		tOE	—	100	ns

Note 1: For express algorithm, initial programming width tolerance is 100 s ±5%.

2:This parameter is only sampled and not 100% tested. Output ﬂoat is deﬁned as the point where data is no longer driven (see timing diagram).

DS11020F-page 4

1996 Microchip Technology Inc.

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