Microchip Technology Inc 25C320T-I-ST, 25C320T-I-SN, 25C320T-I-P, 25C320T-E-ST, 25C320T-E-SN Datasheet

25C320

32K 5.0V SPI Bus Serial EEPROM

FEATURES

•SPI modes 0,0 and 1,1

•3.0 MHz Clock Rate

•Single 5V Supply

•Low Power CMOS Technology

-Max Write Current: 5 mA

-Read Current: 1.0 mA at 5.5V, 3MHz

-Standby Current: 1 A typical

•4096 x 8 Organization

•32 Byte Page

•Sequential Read

•Self-timed ERASE and WRITE Cycles

•Block Write Protection

-Protect none, 1/4, 1/2, or all of Array

•Built-in Write Protection

-Power On/Off Data Protection Circuitry

-Write Enable Latch

-Write Protect Pin

•High Reliability

-Endurance: 1M cycles (guaranteed)

-Data Retention: >200 years

-ESD protection: >4000V

•8-pin PDIP/SOIC, 14-pin TSSOP

•Temperature ranges supported

-	Commercial (C):	0°C to		+70°C
-	Industrial (I):	-40°C	to	+85°C
-	Automotive (E):	-40°C	to	+125°C

DESCRIPTION

The Microchip Technology Inc. 25C320 is a 32K-bit serial Electrically Erasable PROM (EEPROM). The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a chip select (CS) input, allowing any number of devices to share the same bus.

There are two other inputs that provide the end user with additional flexibility. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of chip select, allowing the host to service higher priority interrupts. Also write operations to the Status Register can be disabled via the write protect pin (WP).

SPI is a trademark of Motorola.

PACKAGE TYPES

DIP/SOIC

1

8

VCC

CS

25C320

3

6

WP

SCK

SO

2

7

HOLD

4

5

VSS

SI

TSSOP

1

14 VCC

CS

SO 2

25C320

13

HOLD

NC 3

12 NC

NC 4

11 NC

NC 5

10 NC

WP 6

9 SCK

VSS 7

8 SI

BLOCK DIAGRAM

	Status		HV Generator
	Register
			EEPROM
	I/O Control	Memory	X
		Control	Array
	Logic
		Logic	Dec
			Page Latches
	WP
	SI
	SO		Y Decoder
	CS
	SCK
	HOLD		Sense Amp.
			R/W Control
		Vcc
		Vss

1996 Microchip Technology Inc.

Preliminary

DS21159B-page 1

25C320

1.0ELECTRICAL CHARACTERISTICS

1.1Maximum Ratings*

VCC........................................................................	7.0V
All inputs and outputs w.r.t. VSS.......	-0.6V to VCC+1.0V
Storage temperature ............................	-65°C to 150°C
Ambient temperature under bias..........	-65°C to 125°C
Soldering temperature of leads	+300°C
(10 seconds) ....................................................
ESD protection on all pins.....................................	4 kV

*Notice: Stresses above those listed under ‘Maximum ratings’ may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended period of time may affect device reliability

TABLE 1-1: PIN FUNCTION TABLE

	Name					Function
						Chip Select Input
		CS
		SO				Serial Data Output
		SI				Serial Data Input
	SCK					Serial Clock Input
						Write Protect Pin
		WP
	VSS					Ground
	VCC					Supply Voltage
						Hold Input
	HOLD
		NC				No Connect

FIGURE 1-1: AC TEST CIRCUIT

Vcc

2.25 K

SO

1.8 K			100 pF

1.2AC Test Conditions

AC Waveform:
VLO = 0.2V
VHI = Vcc - 0.2V	(Note 1)
VHI = 4.0V	(Note 2)
Timing Measurement Reference Level
Input	0.5 VCC
Output	0.5 VCC
Note 1: For VCC ≤ 4.0V
2: For VCC > 4.0V

TABLE 1-2:	DC CHARACTERISTICS
Applicable over recommended operating ranges shown below unless otherwise noted:
VCC = 4.5V to 5.5V
Commercial (C):	Tamb = 0°C to +70˚C
Industrial (I):	Tamb	=-40˚C to +85˚C
Automotive (E):	Tamb = -40°C to +125°C
Parameter			Symbol		Min	Max	Units				Test Conditions
High level input voltage			VIH		2.0	VCC+1	V
Low level input voltage			VIL		-0.3	0.8	V
Low level output voltage			VOL		—	0.4	V	I OL=2.1 mA
High level output voltage			VOH		VCC-0.5	—	V	I OH=-400 A
Input leakage current			ILI		-10	10	A
									CS=VIH, VIN=GND to VCC
Output leakage current			ILO		-10	10	A
									CS=VIH, VOUT=GND to VCC
Internal Capacitance			CINT		—	7	pF	Tamb=25 °C, FCLK=1.0 MHz,
(all inputs and outputs)									VCC=5.5V (Note)
Operating Current			ICC write		——	5	mA	V CC=5.5V; SO=Open
			ICC read		—	1	mA	V CC=5.5V; SO=Open, FCLK=3.0 MHz
Standby Current			ICCS		—	5	A
									CS=VCC=5.5V; VIN=Gnd or VCC
Note: This parameter is periodically sampled and not 100% tested.
DS21159B-page 2					Preliminary						1996 Microchip Technology Inc.

25C320

FIGURE 1-2: SERIAL INPUT TIMING

			tCSD
CS
	tCSS	t	tCLD
		R	tCSH
		tF
SCK
tSU		t
		HD
SI	msb in		lsb in
SO		high impedance

FIGURE 1-3: SERIAL OUTPUT TIMING

CS
	tHI	tCSH
		tLO
SCK
	tV	tDIS
		tHO
SO	msb out	lsb out
SI		don’t care

FIGURE 1-4: HOLD TIMING

CS
		tHS	tHH	tHS	tHH
SCK
			tHZ		tHV
SO	n+2	n+1	n	high impedance	n	n-1
				don’t care	tSU
SI	n+2	n+1	n		n	n-1
HOLD

1996 Microchip Technology Inc.

Preliminary

DS21159B-page 3

25C320

TABLE 1-3:			AC CHARACTERISTICS
Applicable over recommended operating ranges shown below unless otherwise noted:
VCC = 4.5V to 5.5V
Commercial (C):			Tamb = 0°C to +70°C
Industrial (I):			Tamb = +40°C to +85C
Automotive (E):			Tamb = -40°C to +125°C
Symbol					Parameter	Min	Max	Units		Test Conditions
fSCK		Clock Frequency				—	3	MHz
tCSS				Setup Time		100	—	ns
		CS
tCSH				Hold Time		100	—	ns
		CS
tCSD				Disable Time		250	—	ns
		CS
tSU		Data Setup Time				30	—	ns
tHD		Data Hold Time				50	—	ns
tR		CLK Rise Time				—	2	s		(Note 1)
tF		CLK Fall Time				—	2	s		(Note 1)
tHI		Clock High Time				150	—	ns
tLO		Clock Low Time				150	—	ns
tCLD		Clock Delay Time				50	—	ns
tV		Output Valid from				—	150	ns
			Clock Low
tHO		Output Hold Time				0	—	ns
tDIS		Output Disable Time				—	200	ns		(Note 1)
tHS					Setup Time	100	—	ns
		HOLD
tHH					Hold Time	100	—	ns
		HOLD
tHZ					Low to Output High-Z	100	—	ns		(Note 1)
		HOLD
tHV					High to Output Valid	100	—	ns		(Note 1)
		HOLD
tWC		Internal Write Cycle Time				—	5	ms		(Note 2)
—	Endurance					1M	—	E/W Cycles	25 °C, Vcc = 5.0V, Block Mode
										(Note 3)

Note 1: This parameter is periodically sampled and not 100% tested.

2:tWC begins on the rising edge of CS after a valid write sequence and ends when the internal self-timed write cycle is complete.

3:This parameter is not tested but guaranteed by characterization. For endurance estimates in a specific application, please consult the Total Endurance Model which can be obtained on our BBS or website.

DS21159B-page 4

Preliminary

1996 Microchip Technology Inc.