Microchip Technology Inc 25AA160T-I-SN, 25AA160T-SN, 25AA160T-P, 25AA160-I-SN, 25AA080-P Datasheet



1996 Microchip Technology Inc.

Preliminary

DS21146D-page 1

FEATURES

• 3 MHz Clock Rate

• SPI Modes 0,0 and 1,1.

• Single supply with programming operation down
to 1.8V

• Low Power CMOS Technology

- Max Write Current: 5 mA

- Read Current: 1.0 mA

- Standby Current: 1 µ A typical

• Organization

- 1024 x 8 for 25AA080

- 2048 x 8 for 25AA160

• 16 Byte Page

• Self-timed ERASE and WRITE Cycles

• Sequential Read

• Block Write Protection

- Protect none, 1/4, 1/2, or all of Array

• Built-in Write Protection

- Power On/Off Data Protection Circuitry

- Write Latch

- Write Protect Pin

• High Reliability

- Endurance: 10M cycles (guaranteed)

- Data Retention: >200 years

- ESD protection: >4000 V

• 8-pin PDIP/SOIC Packages

• Temperature ranges supported

DESCRIPTION

The Microchip Technology Inc. 25AA080/160 are 8K
and 16K bit Serial Electrically Erasable PROMs. The
memory is accessed via a simple Serial Peripheral
Interface (SPI) compatible serial bus. The bus signals
required are a clock input (SCK) plus separate data in
(SI) and data out (SO) lines. Access to the device is
controlled through a chip select (CS

) input, allowing any

number of devices to share the same bus.
There are two other inputs that provide the end user

with additional flexibility. Communication to the device
can be paused via the hold pin (HOLD

). While the
device is paused, transitions on its inputs will be
ignored, with the exception of chip select, allowing the
host to service higher priority interrupts. Also write
operations to the Status Register can be disabled via
the write protect pin (WP

).

- Commercial (C): 0 ° C to +70 ° C

- Industrial (I): -40 ° C to +85 ° C

PACKAGE TYPES

BLOCK DIAGRAM

25AA080/160

25AA080/160

CS
SO

WP

Vss

Vcc

HOLD

SCK
SI

1
2

3

4

8
7

6

5

CS
SO

WP

Vss

Vcc

HOLD

SCK
SI

1
2

3

4

8
7

6

5

PDIP

SOIC

SI

SO

SCK

CS

HOLD

WP

Status

Register

I/O Control

Memory

Control

Logic

X

Dec

HV Generator

EEPROM

Array

Page Latches

Y Decoder

Sense Amp.
R/W Control

Logic

Vcc
Vss

25AA080/160

8K/16K 1.8V SPI



Bus Serial EEPROM

SPI is a trademark of Motorola.

25AA080/160

DS21146D-page 2

Preliminary



1996 Microchip Technology Inc.

1.0 ELECTRICAL
CHARACTERISTICS

1.1 Maxim

um Ratings*

V

CC

.......................................................................7.0V

All inputs and outputs w.r.t. ......V

SS

-0.6V to V

CC

+1.0V

Storage temperature.............................-65˚C to 150˚C

Ambient temperature under bias...........-65˚C to 125˚C
Soldering temperature of leads (10 seconds)...+300˚C

ESD protection on all pins...................................... 4kV

*

Notice: Stresses above those listed under ‘Maximum ratings’

may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at those or
any other conditions above those indicated in the operational
listings of this specification is not implied. Exposure to maxi­mum rating conditions for extended period of time may affect
device reliability.

TABLE 1-1: PIN FUNCTION TABLE

Name Function

CS

Chip Select Input

SO Serial Data Output

SI Serial Data Input

SCK Serial Clock Input

WP

Write Protect Pin

V

SS

Ground

V

CC

Supply V oltage

HOLD

Hold Input

FIGURE 1-1: AC TEST CIRCUIT

1.2 A

C Test Conditions

AC Waveform:

V

LO

= 0.2V

V

HI

= Vcc - 0.2V (Note 1)

V

HI

= 4.0V (Note 2)

Timing Measurement Reference Level

Input 0.5 V

CC

Output 0.5 V

CC

Note 1: For V

CC

≤

4.0V

2: For V

CC

> 4.0V

Vcc

SO

100 pF

1.8 K

2.25 K

TABLE 1-2: DC CHARACTERISTICS

Applicable over recommended operating ranges shown below unless otherwise noted.
V

CC

= +1.8V to 5.5V
Commercial (C): Tamb = 0˚C to +70˚C
Industrial (I): Tamb = -40 ° C to +85 ° C

Parameter Symbol Min Max Units Test Conditions

High level input voltage V

IH1

2.0 V

CC

+1 V V

CC

≥

2.7V

V

IH2

0.7 V

CC

V

CC

+1 V V

CC

< 2.7V

Low level input voltage V

IL1

-0.3 0.8 V V

CC

≥

2.7V

V

IL2

-0.3 0.3 V

CC

VV

CC

< 2.7V

Low level output voltage V

OL

— 0.4 V I

OL

=2.1 mA

High level output voltage V

OH

V

CC

-0.5 — V I

OH

=-400 µ A

Input leakage current I

LI

-10 10

µ

ACS

=V

IH

, V

IN

=V

SS

to V

CC

Output leakage current I

LO

-10 10

µ

ACS

=V

IH

, V

OUT

=V

SS

to V

CC

Internal Capacitance
(all inputs and outputs)

C

INT

— 7 pF Tamb=25˚C, F

CLK

=3.0 MHz,

V

CC

=5.5V (Note)

Operating Current I

CC

WRITE

—
—

5
3

mAmAV

CC

=5.5V

V

CC

=2.5V

I

CC

READ

—
—

1

500

mA

µ

A

V

CC

=5.5V; 3 MHz

V

CC

=2.5V; 2 MHz

Standby Current I

CCS

—
—

5
2

µ A µ

A

CS

=V

CC

=5.5V; Vin=0V or V

CC

CS

=V

CC

=2.5V; Vin=0V or V

CC

Note: This parameter is periodically sampled and not 100% tested.



1996 Microchip Technology Inc.

Preliminary

DS21146D-page 3

25AA080/160

FIGURE 1-2: SERIAL INPUT TIMING

FIGURE 1-3: SERIAL OUTPUT TIMING

FIGURE 1-4: HOLD TIMING

CS

SCK

SI

SO

t

CSS

t

HD

t

SU

t

F

t

R

t

CSD

t

CLD

t

CSH

LSB inMSB in

high impedance

CS

SCK

SO

t

LO

t

HI

t

HO

t

V

MSB out

LSB out

t

CSH

t

DIS

don’t care

SI

CS

SCK

SO

SI

HOLD

t

HH

t

HS

t

HS

t

HH

t

HV

t

HZ

don’t care

t

SU

high impedance

n+2 n+1 n n-1

n

n+2 n+1 n

n

n-1

25AA080/160

DS21146D-page 4

Preliminary



1996 Microchip Technology Inc.

TABLE 1-3: AC CHARACTERISTICS

Applicable over recommended operating ranges shown below unless otherwise noted.
VCC = +1.8V to 5.5V
Commercial (C): Tamb = 0˚C to +70˚C
Industrial (I): Tamb = -40 ° C to +85 ° C

Symbol Parameter Min Max Units Test Conditions

fSCK Clock Frequency —

—
—

3
2
1

MHz
MHz
MHz

VCC=4.5V to 5.5V
VCC=2.5V to 4.5V
VCC=1.8V to 2.5V

tCSS CS Setup Time 100

250
500

—
—
—

ns
ns
ns

VCC=4.5V to 5.5V
VCC=2.5V to 4.5V
VCC=1.8V to 2.5V

tCSH CS Hold Time 100

250
500

—
—
—

ns
ns
ns

VCC=4.5V to 5.5V
VCC=2.5V to 4.5V
VCC=1.8V to 2.5V

tCSD CS Disable Time 250

500
500

—
—
—

ns
ns
ns

VCC=4.5V to 5.5V
VCC=2.5V to 4.5V
VCC=1.8V to 2.5V

tSU Data Setup Time 30

50
50

—
—
—

ns
ns
ns

VCC=4.5V to 5.5V
VCC=2.5V to 4.5V
VCC=1.8V to 2.5V

tHD Data Hold Time 50

100
100

—
—
—

ns
ns
ns

VCC=4.5V to 5.5V
VCC=2.5V to 4.5V
VCC=1.8V to 2.5V

tR CLK Rise Time — 2

µ

s

(Note 1)

tF CLK Fall Time — 2

µ

s

(Note 1)

tHI Clock High Time 150

250
475

—
—
—

ns
ns
ns

VCC=4.5V to 5.5V
VCC=2.5V to 4.5V
VCC=1.8V to 2.5V

tLO Clock Low Time 150

250
475

—
—
—

ns
ns
ns

VCC=4.5V to 5.5V
VCC=2.5V to 4.5V

VCC=1.8V to 2.5V
tCLD Clock Delay Time 50 — ns
tV Output V alid from

Clock Low

—
—
—

150
250
475

ns
ns
ns

VCC=4.5V to 5.5V

VCC=2.5V to 4.5V

VCC=1.8V to 2.5V
tHO Output Hold Time 0 — ns
tDIS Output Disable Time —

—
—

200
250
500

ns
ns
ns

VCC=4.5V to 5.5V (Note 1)

VCC=2.5V to 4.5V (Note 1)

VCC=1.8V to 2.5V (Note 1)
tHS HOLD Setup Time 100

100
200

—
—
—

ns
ns
ns

VCC=4.5V to 5.5V

VCC=2.5V to 4.5V

VCC=1.8V to 2.5V
tHH HOLD Hold Time 100

100
200

—
—
—

ns
ns
ns

VCC=4.5V to 5.5V

VCC=2.5V to 4.5V

VCC=1.8V to 2.5V
tHZ HOLD Low to Output High-Z 100

150
200

—
—
—

ns
ns
ns

VCC=4.5V to 5.5V (Note 1)

VCC=2.5V to 4.5V (Note 1)

VCC=1.8V to 2.5V (Note 1)
tHV HOLD High to Output Valid 100

150
200

—
—
—

ns
ns
ns

VCC=4.5V to 5.5V (Note 1)

VCC=2.5V to 4.5V (Note 1)

VCC=1.8V to 2.5V (Note 1)
tWC Internal Write Cycle Time — 5 ms

(Note 2)
— Endurance 10M — E/W

Cycles

25 ° C, Vcc = 5.0V, Block Mode (Note 3)

Note 1:

This parameter is periodically sampled and not 100% tested.

2:

twc begins on the rising edge of CS after a valid write sequence and ends when the internal self-timed write cycle is com­plete.

3: This parameter is not tested but guaranteed by characterization. For endurance estimates in a specific application, please

consult the Total Endurance Model which can be obtained on our BBS or website.