Microchip Technology Inc 93C86T-I-SN, 93C86T-I-P, 93C86T-E-SN, 93C86T-SN, 93C86T-P Datasheet

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Microchip Technology Inc 93C86T-I-SN, 93C86T-I-P, 93C86T-E-SN, 93C86T-SN, 93C86T-P Datasheet

93C76/86

8K/16K 5.0V Microwire Serial EEPROM

FEATURES

•Single 5.0V supply

•Low power CMOS technology

-1 mA active current typical

•ORG pin selectable memory conﬁguration 1024 x 8- or 512 x 16-bit organization (93C76) 2048 x 8- or 1024 x 16-bit organization (93C86)

•Self-timed ERASE and WRITE cycles (including auto-erase)

•Automatic ERAL before WRAL

•Power on/off data protection circuitry

•Industry standard 3-wire serial I/O

•Device status signal during ERASE/WRITE cycles

•Sequential READ function

•10,000,000 ERASE/WRITE cycles guaranteed

•Data retention > 200 years

•8-pin PDIP/SOIC package

•Temperature ranges supported

-	Commercial (C):	0°C	to	+70°C
-	Industrial	-40°C to		+85°C
-	Automotive (E)	-40°C	to	+125°C

DESCRIPTION

The Microchip Technology Inc. 93C76/86 are 8K and 16K low voltage serial Electrically Erasable PROMs. The device memory is conﬁgured as x8 or x16 bits depending on the ORG pin setup. Advanced CMOS technology makes these devices ideal for low power non-volatile memory applications. These devices also have a Program Enable (PE) pin to allow the user to write protect the entire contents of the memory array. The 93C76/86 is available in standard 8-pin DIP and 8- pin surface mount SOIC packages.

PACKAGE TYPES

DIP Package

CS	1	93C76/86	8	VCC


CLK	2		7	PE


DI	3		6	ORG


DO	4		5	VSS

SOIC Package

CS	1	93C76/86	8	VCC
CS	2		7	VCC
CLK	2		7	PE
	3		6	ORG
DI	3		6	ORG
			5	VSS
DO	4

BLOCK DIAGRAM

	VCC VSS
	Memory	Address
	Array	Decoder
		Address
		Counter
	Data	Output
	Register	Output	DO
	Register	Buffer	DO
		Buffer
DI
	Mode
PE	Decode
CS	Logic
CS
CLK	Clock
CLK	Generator
	Generator

Microwire is a registered trademark of National Semiconductor Incorporated.

1996 Microchip Technology Inc.

Preliminary

DS21132C-page 1

93C76/86

1.0ELECTRICAL CHARACTERISTICS

1.1Maximum Ratings*

VCC ...................................................................................		7.0V
All inputs and outputs w.r.t. VSS ...............	-0.6V to Vcc +1.0V
Storage temperature .....................................		-65˚C to +150˚C
Ambient temp. with power applied.................		-65˚C to +125˚C
Soldering temperature of leads (10 seconds)		............. +300˚C
ESD protection on all pins................................................		4 kV

*Notice: Stresses above those listed under “Maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this speciﬁcation is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability

TABLE 1-1: PIN FUNCTION TABLE

Name	Function


CS	Chip Select
CLK	Serial Data Clock
DI	Serial Data Input
DO	Serial Data Output
VSS	Ground
ORG	Memory Conﬁguration
PE	Program Enable
VCC	Power Supply

TABLE 1-2: DC CHARACTERISTICS

1.2AC Test Conditions

AC Waveform:
VLO = 2.0V
VHI = Vcc - 0.2V	(Note 1)
VHI = 4.0V for	(Note 2)
Timing Measurement Reference Level
Input	0.5 VCC
Output	0.5 VCC
Note 1: For VCC ≤ 4.0V
2: For VCC > 4.0V

Applicable over recommended operating ranges shown below unless otherwise noted:

VCC = +4.5V to +5.5V
Commercial (C):	Tamb = 0°C to -40°C
Industrial (I):	Tamb = -40°C to +85°C
Automotive (E):	Tamb = -40°C to +125°C
Parameter		Symbol	Min.	Max.	Units	Conditions


High level input voltage		VIH1	2.0	VCC +1	V	—
Low level input voltage		VIL1	-0.3	0.8	V	—
Low level output voltage		VOL1	—	0.4	V	I OL = 2.1 mA; VCC = 4.5V
		VOL2	—	0.2	V	I OL =100 A; VCC = 4.5V
High level output voltage		VOH1	2.4	—	V	I OH = -400 A; VCC = 4.5V
		VOH2	VCC-0.2	—	V	I OH = -100 A; VCC = 4.5V.
Input leakage current		ILI	-10	10	A	VIN = 0.1V to VCC
Output leakage current		ILO	-10	10	A	VOUT = 0.1V to VCC
Pin capacitance		CINT	—	7	pF	(Note Note:)
(all inputs/outputs)						Tamb = +25˚C, FCLK = 1 MHz
Operating current		ICC write	—	3	mA	F CLK = 2 MHz; VCC = 5.5V
		ICC read	—	1.5	mA	F CLK = 2 MHz; VCC = 5.5V
Standby current		ICCS	—	100	A	CLK = CS = 0V; VCC = 5.5V

Note: This parameter is periodically sampled and not 100% tested.

DS21132C-page 2

Preliminary

1996 Microchip Technology Inc.

93C76/86

TABLE 1-3:	AC CHARACTERISTICS

Applicable over recommended operating ranges shown below unless otherwise noted:
VCC = +4.5V to +5.5V
Commercial (C):	Tamb = 0°C to -40°C
Industrial (I):	Tamb = -40°C to +85°C
Automotive (E):	Tamb = -40°C to +125°C
Parameter		Symbol	Min.	Max.	Units	Conditions


Clock frequency		FCLK	—	2	MHz	Vcc ≥ 4.5V
Clock high time		TCKH	300	—	ns
Clock low time		TCKL	200	—	ns
Chip select setup time		TCSS	50	—	ns	Relative to CLK
Chip select hold time		TCSH	0	—	ns
Chip select low time		TCSL	250	—	ns	Relative to CLK
Data input setup time		TDIS	100	—	ns	Relative to CLK
Data input hold time		TDIH	100	—	ns	Relative to CLK
Data output delay time		TPD	—	400	ns	C L = 100 pF
Data output disable time		TCZ	—	100	ns	(Note 1)
Status valid time		TSV	—	500	ns	C L = 100 pF
Program cycle time		TWC	—	10	ms	ERASE/WRITE mode (Note 2)
		TEC	—	15	ms	ERAL mode
		TWL	—	30	ms	WRAL mode
Endurance		—	10M	—	cycles	25 °C, VCC = 5.0V, Block Mode
						(Note 3)

Note 1: This parameter is periodically sampled and not 100% tested.

2:Typical program cycle is 4 ms per word.

3:This parameter is not tested but guaranteed by characterization. For endurance estimates in a speciﬁc application, please consult the Total Endurance Model which can be obtained on our BBS or website.

TABLE 1-4:

INSTRUCTION SET FOR 93C76: ORG=1 (X16 ORGANIZATION)

Instruction

Opcode

Address

Data In

Data Out

Req. CLK Cycles

READ

X A8 A7 A6 A5 A4 A3 A2 A1 A0

—

D15 - D0

EWEN

—

High-Z

ERASE

X A8 A7 A6 A5 A4 A3 A2 A1 A0

—

(RDY/BSY)

ERAL

—

(RDY/BSY)

WRITE

X A8 A7 A6 A5 A4 A3 A2 A1 A0

D15 - D0

(RDY/BSY)

WRAL

D15 - D0

(RDY/BSY)

EWDS

0 0 X X X X X X X X

—

High-Z

TABLE 1-5:

INSTRUCTION SET FOR 93C76: ORG=0 (X8 ORGANIZATION)

Instruction

Opcode

Address

Data In

Data Out

Req. CLK

Cycles

READ

X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

—

D7 - D0

EWEN

—

High-Z

ERASE

X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

—

(RDY/BSY)

ERAL

—

(RDY/BSY)

WRITE

X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

D7 - D0

(RDY/BSY)

WRAL

D7 - D0

(RDY/BSY)

EWDS

—

High-Z

1996 Microchip Technology Inc.

Preliminary

DS21132C-page 3

93C76/86

TABLE 1-6:	INSTRUCTION SET FOR 93C86: ORG=1 (X16 ORGANIZATION)

Instruction	SB	Opcode				Address				Data In				Data Out		Req. CLK Cycles


READ	1	10	A9 A8 A7 A6 A5 A4 A3 A2 A1 A0								—	D15 - D0			29
EWEN	1	00	1	1	X	X X X X X X X					—	High-Z			13
ERASE	1	11	A9 A8 A7 A6 A5 A4 A3 A2 A1 A0								—	(RDY/BSY)			13
ERAL	1	00	1	0	X	X X X X X X X					—	(RDY/BSY)			13
WRITE	1	01	A9 A8 A7 A6 A5 A4 A3 A2 A1 A0							D15 - D0			(RDY/BSY)		29
WRAL	1	00	0	1	X	X X X X X	X	X		D15 - D0			(RDY/BSY)		29
EWDS	1	00	0	0	X X X X X X X X						—	High-Z			13
TABLE 1-7:	INSTRUCTION SET FOR 93C86: ORG=0 (X8 ORGANIZATION)

Instruction	SB	Opcode				Address					Data In			Data Out		Req. CLK Cycles


READ	1	10	A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0								—			D7 - D0		22
EWEN	1	00	1	1	X X X X X X X X X						—			High-Z		14
ERASE	1	11	A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0								—			(RDY/BSY)		14
ERAL	1	00	1	0	X X X X X X X X X						—			(RDY/BSY)		14
WRITE	1	01	A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0								D7 - D0			(RDY/BSY)		22
WRAL	1	00	0	1	X	X X X X X	X	X	X		D7 - D0			(RDY/BSY)		22
EWDS	1	00	0	0	X	X X X X X	X	X	X		—			High-Z		14

DS21132C-page 4

Preliminary

1996 Microchip Technology Inc.

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