H11AV2A-M
6/30/03
PACKAGE OUTLINE
Page 1 of 10
© 2003 Fairchild Semiconductor Corporation
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M
DESCRIPTION
The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin
dual in-line white package.
FEATURES
• H11AV1 and H11AV2 feature 0.3" input-output lead spacing
• H11AV1A and H11AV2A feature 0.4" input-output lead spacing
• UL recognized (File #E90700, Vol. 2)
• VDE recognized (File #102497)
- Add option V (e.g., H11AV1AV-M)
APPLICATIONS
•Power supply regulators
• Digital logic inputs
• Microprocessor inputs
SCHEMATIC
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
2
1
3NC
5
6
4
6
1
6
6
1
1
H11AV1S-M, H11AV2S-M
H11AV1-M, H11AV2-M
H11AV1A-M, H11AV2A-M
6/30/03
Page 2 of 10
© 2003 Fairchild Semiconductor Corporation
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol Value Units
TOTAL DEVICE
Storage Temperature
T
STG
-40 to +150 °C
Operating Temperature
T
OPR
-40 to +100 °C
Wave solder temperature (see page 9 for reflow solder profiles)
T
SOL
260 for 10 sec °C
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
250 mW
2.94 mW/°C
EMITTER
DC/Average Forward Input Current
I
F
60 mA
Reverse Input Voltage
V
R
6V
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
120 mW
1.41 mW/°C
DETECTOR
Collector-Emitter Voltage
V
CEO
70 V
Collector-Base Voltage
V
CBO
70 V
Emitter-Collector Voltage
V
ECO
7V
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
150 mW
1.76 mW/°C
6/30/03
Page 3 of 10
© 2003 Fairchild Semiconductor Corporation
PHOTOTRANSISTOR OPTOCOUPLERS
H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M
Note
* Typical values at T
A
= 25°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter Test Conditions Symbol Min Typ* Max Unit
EMITTER
Input Forward Voltage (I
F
= 10 mA) T
A
= 25°C
V
F
0.8 1.18 1.5
VT
A
= -55°C 0.9 1.28 1.7
T
A
= 100°C 0.7 1.05 1.4
Reverse Leakage Current (V
R
= 6.0 V) I
R
10 µA
DETECTOR
Collector-Emitter Breakdown Voltage (I
C
= 1.0 mA, I
F
= 0) BV
CEO
70 100 V
Collector-Base Breakdown Voltage (I
C
= 100 µA, I
F
= 0) BV
CBO
70 120 V
Emitter-Collector Breakdown Voltage (I
E
= 100 µA, I
F
= 0) BV
ECO
710 V
Collector-Emitter Dark Current (V
CE
= 10 V, I
F
= 0) I
CEO
1 50 nA
Collector-Base Dark Current (V
CB
= 10 V) I
CBO
0.5 nA
Capacitance (V
CE
= 0 V, f = 1 MHz) C
CE
8pF
ISOLATION CHARACTERISTICS
Characteristic Test Conditions Symbol Min Typ* Max Units
Input-Output Isolation Voltage (f = 60 Hz, t = 1 sec) V
ISO
7500 Vac(pk)
Isolation Resistance (V
I-O
= 500 VDC) R
ISO
10
11
Ω
Isolation Capacitance (V
I-O
= 0 V, f = 1 MHz) C
ISO
0.2 2 pF
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