SGS Thomson Microelectronics M2732A-20F6, M2732A-20F1, M2732A-F6, M2732A-F1, M2732A-4F1 Datasheet

M2732A

NMOS 32K (4K x 8) UV EPROM

FAST ACCESS TIME: 200ns

EXTENDED TEMPERATURE RANGE

SINGLE 5V SUPPLY VOLTAGE

LOW STANDBY CURRENT: 35mA max

INPUTS and OUTPUTS TTL COMPATIBLE

DURING READ and PROGRAM

COMPLETELY STATIC

DESCRIPTION

The M2732A is a 32,768 bit UV erasable and electrically programmable memory EPROM. It is organized as 4,096 words by 8 bits. The M2732A with its single 5V power supply and with an access time of 200 ns, is ideal suited for applications where fast turn around and pattern experimentation one important requirements.

The M2732A is honsed in a 24 pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can be then written to the clerice by following the programming procedure.

Table 1. Signal Names

	A0 - A11		Address Inputs
	Q0 - Q7		Data Outputs
	E		Chip Enable
	GVPP		Output Enable / Program Supply
	VCC		Supply Voltage
	VSS		Ground

24

1

FDIP24W (F)

Figure 1. Logic Diagram

	VCC
12	8
A0-A11	Q0-Q7

E M2732A

GVPP

VSS

AI00780B

July 1994

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M2732A

Table 2. Absolute Maximum Ratings

Symbol	Parameter		Value	Unit
TA	Ambient Operating Temperature	grade 1	0 to 70	°C
		grade 6	–40 to 85
TBIAS	Temperature Under Bias	grade 1	–10 to 80	°C
		grade 6	–50 to 95
TSTG	Storage Temperature		–65 to 125	°C
VIO	Input or Output Voltages		–0.6 to 6	V
VCC	Supply Voltage		–0.6 to 6	V
VPP	Program Supply Voltage		–0.6 to 22	V

Note: Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other relevant quality documents.

Figure 2. DIP Pin Connections

A7	1			24	VCC
A6		2		23	A8
A5		3		22	A9
A4	4			21	A11
A3	5			20
					GVPP
A2	6		M2732A	19	A10
A1	7			18	E
A0	8			17	Q7
Q0	9			16	Q6
Q1	10			15	Q5
Q2	11			14	Q4
VSS	12			13	Q3
			AI00781

DEVICE OPERATION

The six modes of operation for the M2732A are listed in the Operating Modes Table. A single 5V power supply is required in the read mode. All inputs are TTL level except for VPP.

Read Mode

The M2732A has two control functions, both of which must be logically satisfied in order to obtain data at the outputs. Chip Enable (E) is the power control and should be used for device selection. Output Enable (G) is the output control and should

be used to gate data to the output pins, independent of device selection.

Assuming that the addresses are stable, address access time (tAVAQ) is equal to the delay from E to output (tELQV). Data is available at the outputs after the falling edge of G, assuming that E has been low and the addresses have been stable for at least

tAVQV-tGLQV.

Standby Mode

The M2732A has a standby mode which reduces the active power current by 70 %, from 125 mA to 35 mA. The M2732A is placed in the standby mode by applying a TTL high signal to E input. When in standby mode, the outputs are in a high impedance state, independent of the GVPP input.

Two Line Output Control

Because M2732A’s are usually used in larger memory arrays, this product features a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows:

a.the lowest possible memory power dissipation,

b.complete assurance that output bus contention will not occur.

To most efficiently use these two control lines, it is recommended that E be decoded and used as the primary device selecting function, while G should be made a common connection to all devices in the array and connected to the READ line from the system control bus.

This ensures that all deselected memory devices are in their low power standby mode and that the output pins are only active when data is required from a particular memory device.

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M2732A

Programming

When delivered, and after each erasure, all bits of the M2732A are in the “1" state. Data is introduced by selectively programming ”0’s" into the desired bit locations. Although only “0’s” will be programmed, both “1’s” and “0’s” can be presented in the data word. The only way to change a “0" to a ”1" is by ultraviolet light erasure.

The M2732A is in the programming mode when the GVPP input is at 21V. A 0.1μF capacitor must be placed across GVPP and ground to suppress spurious voltage transients which may damage the device. The data to be programmed is applied, 8 bits in parallel, to the data output pins. The levels required for the address and data inputs are TTL.

When the address and data are stable, a 50ms, active low, TTL program pulse is applied to the E input. A program pulse must be applied at each address location to be programmed. Any location can be programmed at any time - either individually, sequentially, or at random. The program pulse has a maximum width of 55ms. The M2732A must not be programmed with a DC signal applied to the E input.

Programming of multiple M2732As in parallel with the same data can be easily accomplished due to the simplicity of the programming requirements. Inputs of the paralleled M2732As may be connected together when they are programmed with the same data. A low level TTL pulse applied to the E input programs the paralleled 2732As.

Program Inhibit

Programming of multiple M2732As in parallel with different data is also easily accomplished. Except for E, all like inputs (including GVPP) of the parallel M2732As may be common. A TTL level program

Table 3. Operating Modes

pulse applied to a M2732A’s E input with GVPP at 21V will program that M2732A. A high level E input inhibits the other M2732As from being programmed.

Program Verify

A verify should be performed on the programmed bits to determine that they were correctly pro- grammed. The verify is carried out with GVPP and E at VIL.

ERASURE OPERATION

The erasure characteristics of the M2732A are such that erasure begins when the cells are exposed to light with wavelengths shorter than approximately 4000 Å. It should be noted that sunlight and certain types of fluorescent lamps have wavelengths in the 3000-4000 Å range. Research shows that constant exposure to room level fluorescent lighting could erase a typical M2732A in approximately 3 years, while it would take approximately 1 week to cause erasure when exposed to the direct sunlight. If the M2732A is to be exposed to these types of lighting conditions for extended periods of time, it is suggested that opaque labels be put over the M2732A window to prevent unintentional erasure.

The recommended erasure procedure for the M2732A is exposure to shortwave ultraviolet light which has a wavelength of 2537 Å. The integrated dose (i.e. UV intensity x exposure time) for erasure should be a minimum of 15 W-sec/cm2. The erasure time with this dosage is approximately 15 to 20 minutes using an ultraviolet lamp with 12000 μW/cm2 power rating. The M2732A should be placed within 2.5 cm of the lamp tubes during erasure. Some lamps have a filter on their tubes which should be removed before erasure.

Mode	E			GVPP			VCC	Q0 - Q7
Read	VIL				VIL		VCC	Data Out
Program	VIL Pulse				VPP		VCC	Data In
Verify	VIL				VIL		VCC	Data Out
Program Inhibit	VIH				VPP		VCC	Hi-Z
Standby	VIH					X	VCC	Hi-Z

Note: X = VIH or VIL.

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