Philips BT151S-800R, BT151S-650R, BT151S-500R, BT151M-800R, BT151M-650R Datasheet

Philips Semiconductors Product specification

Thyristors BT151S series

BT151M series

GENERAL DESCRIPTION QUICK REFERENCE DATA

Glasspassivatedthyristorsinaplastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT

envelope, suitable for surface

mounting, intended for use in BT151S (or BT151M)- 500R 650R 800R

applications requiring high V

DRM

, Repetitive peak off-state 500 650 800 V

bidirectional blocking voltage V

RRM

voltages

capability and high thermal cycling I

T(AV)

Average on-state current 7.5 7.5 7.5 A

performance. Typical applications I

T(RMS)

RMS on-state current 12 12 12 A

include motor control, industrial and I

TSM

Non-repetitive peak on-state 100 100 100 A

domestic lighting, heating and static current

switching.

PINNING - SOT428 PIN CONFIGURATION SYMBOL

PIN Standard Alternative

NUMBER S M

1 cathode gate

2 anode anode

3 gate cathode

tab anode anode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

-500R -650R -800R

V

DRM

, V

RRM

Repetitive peak off-state - 500

1

650

1

800 V

voltages

I

T(AV)

Average on-state current half sine wave; T

mb

≤ 103 ˚C - 7.5 A

I

T(RMS)

RMS on-state current all conduction angles - 12 A

I

TSM

Non-repetitive peak half sine wave; T

j

= 25 ˚C prior to

on-state current surge

t = 10 ms - 100 A

t = 8.3 ms - 110 A

I

2

tI

2

t for fusing t = 10 ms - 50 A

2

s

dI

T

/dt Repetitive rate of rise of I

TM

= 20 A; I

G

= 50 mA; - 50 A/µs

on-state current after dI

G

/dt = 50 mA/µs

triggering

I

GM

Peak gate current - 2 A

V

GM

Peak gate voltage - 5 V

V

RGM

Peak reverse gate voltage - 5 V

P

GM

Peak gate power - 5 W

P

G(AV)

Average gate power over any 20 ms period - 0.5 W

T

stg

Storage temperature -40 150 ˚C

T

j

Operating junction - 125 ˚C

temperature

1

2

3

tab

ak

g

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

September 1997 1 Rev 1.100

Philips Semiconductors Product specification

Thyristors BT151S series

BT151M series

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-mb

Thermal resistance - - 1.8 K/W

junction to mounting base

R

th j-a

Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 - 75 - K/W

junction to ambient

STATIC CHARACTERISTICS

T

j

= 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

GT

Gate trigger current V

D

= 12 V; I

T

= 0.1 A - 2 15 mA

I

L

Latching current V

D

= 12 V; I

GT

= 0.1 A - 10 40 mA

I

H

Holding current V

D

= 12 V; I

GT

= 0.1 A - 7 20 mA

V

T

On-state voltage I

T

= 23 A - 1.4 1.75 V

V

GT

Gate trigger voltage V

D

= 12 V; I

T

= 0.1 A - 0.6 1.5 V

V

D

= V

DRM(max)

; I

T

= 0.1 A; T

j

= 125 ˚C 0.25 0.4 - V

I

D

, I

R

Off-state leakage current V

D

= V

DRM(max)

; V

R

= V

RRM(max)

; T

j

= 125 ˚C - 0.1 0.5 mA

DYNAMIC CHARACTERISTICS

T

j

= 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

dV

D

/dt Critical rate of rise of V

DM

= 67% V

DRM(max)

; T

j

= 125 ˚C;

off-state voltage exponential waveform;

Gate open circuit 50 130 - V/µs

R

GK

= 100 Ω 200 1000 - V/µs

t

gt

Gate controlled turn-on I

TM

= 40 A; V

D

= V

DRM(max)

; I

G

= 0.1 A; - 2 - µs

time dI

G

/dt = 5 A/µs

t

q

Circuit commutated V

D

= 67% V

DRM(max)

; T

j

= 125 ˚C; - 70 - µs

turn-off time I

TM

= 20 A; V

R

= 25 V; dI

TM

/dt = 30 A/µs;

dV

D

/dt = 50 V/µs; R

GK

= 100 Ω

September 1997 2 Rev 1.100