Philips BT258X-800R, BT258X-600R, BT258X-500R, BT258S-800R, BT258S-600R Datasheet

Philips Semiconductors Product specification

Thyristors

BT258 series

logic level

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated,

sensitive gate

SYMBOL

PARAMETER

MAX.

MAX.

MAX.

UNIT

thyristors in a plastic envelope,

BT258-

500R

600R

800R

intended for use in general purpose

switching

and

phase

control

VDRM,

Repetitive peak off-state

500

600

800

V

applications.

These devices are

VRRM

voltages

intended to be interfaced directly to

IT(AV)

Average on-state current

5

5

5

A

microcontrollers,

logic

integrated

IT(RMS)

RMS on-state current

8

8

8

A

circuits and other low power gate

ITSM

Non-repetitive peak on-state

75

75

75

A

trigger circuits.

current

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

PIN DESCRIPTION

1cathode

2anode

3gate tab anode

tab

a	k
1 2 3	g

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL			PARAMETER	CONDITIONS	MIN.		MAX.		UNIT
						-500R	-600R	-800R
V	, V	RRM	Repetitive peak off-state		-	5001	6001	800	V
DRM			voltages
				half sine wave; Tmb ≤ 111 ˚C
IT(AV)			Average on-state current		-		5		A
IT(RMS)			RMS on-state current	all conduction angles	-		8		A
ITSM			Non-repetitive peak	half sine wave; Tj = 25 ˚C prior to
			on-state current	surge
				t = 10 ms	-		75		A
				t = 8.3 ms	-		82		A
I2t			I2t for fusing	t = 10 ms	-		28		A2s
dIT/dt			Repetitive rate of rise of	ITM = 10 A; IG = 50 mA;	-		50		A/μs
			on-state current after	dIG/dt = 50 mA/μs
			triggering
IGM			Peak gate current		-		2		A
VGM			Peak gate voltage		-		5		V
VRGM			Peak reverse gate voltage		-		5		V
PGM			Peak gate power		-		5		W
PG(AV)			Average gate power	over any 20 ms period	-		0.5		W
Tstg			Storage temperature		-40		150		˚C
T			Operating junction		-		1252		˚C
j			temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.

2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.

October 1997

1

Rev 1.200

Philips Semiconductors Product specification

Thyristors				BT258 series
logic level
THERMAL RESISTANCES
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
Rth j-mb	Thermal resistance		-	-	2.0	K/W
	junction to mounting base
Rth j-a	Thermal resistance	in free air	-	60	-	K/W
	junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
IGT	Gate trigger current	VD = 12 V; IT = 0.1 A	-	50	200	μA
IL	Latching current	VD = 12 V; IGT = 0.1 A	-	0.4	10	mA
IH	Holding current	VD = 12 V; IGT = 0.1 A	-	0.3	6	mA
VT	On-state voltage	IT = 16 A	-	1.3	1.5	V
VGT	Gate trigger voltage	VD = 12 V; IT = 0.1 A	-	0.4	1.5	V
ID, IR		VD = VDRM(max); IT = 0.1 A; Tj = 110 ˚C	0.1	0.2	-	V
	Off-state leakage current	VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C	-	0.1	0.5	mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
dVD/dt	Critical rate of rise of	VDM = 67% VDRM(max); Tj = 125 ˚C;	50	100	-	V/μs
	off-state voltage	exponential waveform; RGK = 100 Ω				μs
tgt	Gate controlled turn-on	ITM = 10 A; VD = VDRM(max); IG = 5 mA;	-	2	-
	time	dIG/dt = 0.2 A/μs				μs
tq	Circuit commutated	VD = 67% VDRM(max); Tj = 125 ˚C;	-	100	-
	turn-off time	ITM = 12 A; VR = 24 V; dITM/dt = 10 A/μs;
		dVD/dt = 2 V/μs; RGK = 1 kΩ

October 1997

2

Rev 1.200