Philips BT139X-600, BT139X-500G, BT139X-500F, BT139X-800G, BT139X-800 Datasheet
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Philips Semiconductors |
Product specification |
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Triacs |
BT139X series |
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GENERAL DESCRIPTION |
QUICK REFERENCE DATA |
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Glass passivated triacs in a full pack, |
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PARAMETER |
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MAX. |
MAX. |
MAX. |
UNIT |
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plastic envelope, intended for use in |
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BT139X- |
500 |
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600 |
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800 |
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applications |
requiring |
high |
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bidirectional |
transient and |
blocking |
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BT139X- |
500F |
600F |
800F |
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voltage capability and high thermal |
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BT139X- |
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500G |
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600G |
800G |
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cycling |
performance. |
Typical |
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VDRM |
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Repetitive peak off-state |
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500 |
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600 |
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800 |
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V |
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applications |
include motor |
control, |
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voltages |
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industrial |
and domestic |
lighting, |
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IT(RMS) |
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RMS on-state current |
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16 |
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16 |
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16 |
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A |
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heating and static switching. |
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ITSM |
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Non-repetitive peak on-state |
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140 |
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140 |
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140 |
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A |
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current |
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PINNING - SOT186A |
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PIN CONFIGURATION |
SYMBOL |
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PIN DESCRIPTION
1main terminal 1
2main terminal 2
3gate
case isolated
case
T2 |
T1 |
1 2 3 |
G |
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
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MAX. |
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UNIT |
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-500 |
-600 |
-800 |
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V |
Repetitive peak off-state |
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- |
5001 |
6001 |
800 |
V |
DRM |
voltages |
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full sine wave; Ths ≤ 38 ˚C |
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IT(RMS) |
RMS on-state current |
- |
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16 |
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A |
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ITSM |
Non-repetitive peak |
full sine wave; Tj = 25 ˚C prior to |
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on-state current |
surge |
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t = 20 ms |
- |
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140 |
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A |
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t = 16.7 ms |
- |
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150 |
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A |
I2t |
I2t for fusing |
t = 10 ms |
- |
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98 |
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A2s |
dIT/dt |
Repetitive rate of rise of |
ITM = 20 A; IG = 0.2 A; |
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on-state current after |
dIG/dt = 0.2 A/μs |
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A/μs |
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triggering |
T2+ G+ |
- |
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50 |
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T2+ G- |
- |
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50 |
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A/μs |
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T2- G- |
- |
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50 |
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A/μs |
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T2- G+ |
- |
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10 |
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A/μs |
IGM |
Peak gate current |
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- |
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2 |
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A |
VGM |
Peak gate voltage |
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- |
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5 |
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V |
PGM |
Peak gate power |
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- |
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5 |
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W |
PG(AV) |
Average gate power |
over any 20 ms period |
- |
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0.5 |
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W |
Tstg |
Storage temperature |
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-40 |
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150 |
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˚C |
Tj |
Operating junction |
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125 |
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˚C |
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temperature |
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1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
September 1997 |
1 |
Rev 1.200 |
Philips Semiconductors |
Product specification |
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Triacs |
BT139X series |
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ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
Visol |
R.M.S. isolation voltage from all |
f = 50-60 Hz; sinusoidal |
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2500 |
V |
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three terminals to external |
waveform; |
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heatsink |
R.H. ≤ 65% ; clean and dustfree |
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Cisol |
Capacitance from T2 to external |
f = 1 MHz |
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10 |
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pF |
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heatsink |
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THERMAL RESISTANCES
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
Rth j-hs |
Thermal resistance |
full or half cycle |
- |
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4.0 |
K/W |
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junction to heatsink |
with heatsink compound |
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without heatsink compound |
- |
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5.5 |
K/W |
Rth j-a |
Thermal resistance |
in free air |
- |
55 |
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K/W |
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junction to ambient |
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STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
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MAX. |
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UNIT |
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BT139X- |
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... |
...F |
...G |
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IGT |
Gate trigger current |
VD = 12 |
V; IT = 0.1 A |
- |
5 |
35 |
25 |
50 |
mA |
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T2+ G+ |
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T2+ G- |
- |
8 |
35 |
25 |
50 |
mA |
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T2- G- |
- |
10 |
35 |
25 |
50 |
mA |
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T2- G+ |
- |
22 |
70 |
70 |
100 |
mA |
IL |
Latching current |
VD = 12 |
V; IGT = 0.1 A |
- |
7 |
40 |
40 |
60 |
mA |
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T2+ G+ |
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T2+ G- |
- |
20 |
60 |
60 |
90 |
mA |
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T2- G- |
- |
8 |
40 |
40 |
60 |
mA |
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T2- G+ |
- |
10 |
60 |
60 |
90 |
mA |
IH |
Holding current |
VD = 12 |
V; IGT = 0.1 A |
- |
6 |
30 |
30 |
60 |
mA |
VT |
On-state voltage |
IT = 20 A |
- |
1.2 |
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1.6 |
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V |
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VGT |
Gate trigger voltage |
VD = 12 |
V; IT = 0.1 A |
- |
0.7 |
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1.5 |
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V |
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VD = 400 V; IT = 0.1 A; |
0.25 |
0.4 |
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V |
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ID |
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Tj = 125 ˚C |
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Off-state leakage current |
VD = VDRM(max); |
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0.1 |
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0.5 |
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mA |
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Tj = 125 ˚C |
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September 1997 |
2 |
Rev 1.200 |
Philips Semiconductors |
Product specification |
|
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Triacs |
BT139X series |
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DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
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TYP. |
MAX. |
UNIT |
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BT139X- |
... |
...F |
...G |
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V/μs |
dVD/dt |
Critical rate of rise of |
VDM = 67% VDRM(max); |
100 |
50 |
200 |
250 |
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off-state voltage |
Tj = 125 ˚C; exponential |
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waveform; gate open |
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circuit |
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V/μs |
dVcom/dt |
Critical rate of change of |
VDM = 400 V; Tj = 95 ˚C; |
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10 |
20 |
- |
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commutating voltage |
IT(RMS) = 16 A; |
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dIcom/dt = 7.2 A/ms; gate |
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open circuit |
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μs |
tgt |
Gate controlled turn-on |
ITM = 20 A; VD = VDRM(max); |
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- |
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2 |
- |
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time |
IG = 0.1 A; dIG/dt = 5 A/μs |
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September 1997 |
3 |
Rev 1.200 |
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