BT139F-800G
Philips BT139F-800G, BT139F-800F, BT139F-800, BT139F-600G, BT139F-600F Datasheet
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Philips Semiconductors Product specification
Triacs BT139F series
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated triacs in a full pack, SYMBOL PARAMETER MAX. MAX. MAX. UNIT
plastic envelope, intended for use in
applications requiring high BT139F- 500 600 800
bidirectional transient and blocking BT139F- 500F 600F 800F
voltage capability and high thermal BT139F- 500G 600G 800G
cycling performance. Typical V
DRM
Repetitive peak off-state 500 600 800 V
applications include motor control, voltages
industrial and domestic lighting, I
T(RMS)
RMS on-state current 16 16 16 A
heating and static switching. I
TSM
Non-repetitive peak on-state 140 140 140 A
current
PINNING - SOT186 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
V
DRM
Repetitive peak off-state - 500
1
600
1
800 V
voltages
I
T(RMS)
RMS on-state current full sine wave; T
hs
≤ 38 ˚C - 16 A
I
TSM
Non-repetitive peak full sine wave; T
j
= 125 ˚C prior
on-state current to surge; with reapplied V
DRM(max)
t = 20 ms - 140 A
t = 16.7 ms - 150 A
I
2
tI
2
t for fusing t = 10 ms - 98 A
2
s
dI
T
/dt Repetitive rate of rise of I
TM
= 20 A; I
G
= 0.2 A;
on-state current after dI
G
/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs
T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs
I
GM
Peak gate current - 2 A
V
GM
Peak gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms period - 0.5 W
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
T1T2
G
123
case
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
February 1996 1 Rev 1.100
Philips Semiconductors Product specification
Triacs BT139F series
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree - 1500 V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz - 12 - pF
heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
Thermal resistance full or half cycle
junction to heatsink with heatsink compound - - 4.0 K/W
without heatsink compound - - 5.5 K/W
R
th j-a
Thermal resistance in free air - 55 - K/W
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT139F- ... ...F ...G
I
GT
Gate trigger current V
D
= 12 V; I
T
= 0.1 A
T2+ G+ - 5 35 25 50 mA
T2+ G- - 8 35 25 50 mA
T2- G- - 10 35 25 50 mA
T2- G+ - 22 70 70 100 mA
I
L
Latching current V
D
= 12 V; I
GT
= 0.1 A
T2+ G+ - 7 40 40 60 mA
T2+ G- - 20 60 60 90 mA
T2- G- - 8 40 40 60 mA
T2- G+ - 10 60 60 90 mA
I
H
Holding current V
D
= 12 V; I
GT
= 0.1 A - 6 30 30 60 mA
V
T
On-state voltage I
T
= 20 A - 1.2 1.6 V
V
GT
Gate trigger voltage V
D
= 12 V; I
T
= 0.1 A - 0.7 1.5 V
V
D
= 400 V; I
T
= 0.1 A; 0.25 0.4 - V
T
j
= 125 ˚C
I
D
Off-state leakage current V
D
= V
DRM(max)
; - 0.1 0.5 mA
T
j
= 125 ˚C
February 1996 2 Rev 1.100
Philips Semiconductors Product specification
Triacs BT139F series
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT139F- ... ...F ...G
dV
D
/dt Critical rate of rise of V
DM
= 67% V
DRM(max)
; 100 50 200 250 - V/µs
off-state voltage T
j
= 125 ˚C; exponential
waveform; gate open
circuit
dV
com
/dt Critical rate of change of V
DM
= 400 V; T
j
= 95 ˚C; - - 10 20 - V/µs
commutating voltage I
T(RMS)
= 16 A;
dI
com
/dt = 7.2 A/ms; gate
open circuit
t
gt
Gate controlled turn-on I
TM
= 20 A; V
D
= V
DRM(max)
;- - - 2 - µs
time I
G
= 0.1 A; dI
G
/dt = 5 A/µs
February 1996 3 Rev 1.100
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