Philips BY229X-800, BY229X-600, BY229X-400, BY229X-200, BY229F-800 Datasheet

Philips Semiconductors Product specification

Rectifier diodes							BY229F, BY229X series
fast, soft-recovery
FEATURES	SYMBOL						QUICK REFERENCE DATA
• Low forward volt drop							VR = 200 V/ 400 V/ 600 V/800 V
• Fast switching							IF(AV) = 8 A
• Soft recovery characteristic		k		a
• High thermal cycling performance
		1			2		IFSM ≤ 60 A
• Isolated mounting tab
							trr ≤ 135 ns

GENERAL DESCRIPTION

Glass-passivated double diffused rectifier diodes featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The devices are intended for use in TV receivers, monitors and switched mode power supplies.

The BY229F series is supplied in the conventional leaded SOD100 package.

The BY229X series is supplied in the conventional leaded SOD113 package.

PINNING

SOD100

SOD113

PIN

DESCRIPTION

case

case

1 cathode

2 anode

tab isolated

1

2

1

2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.		MAX.				UNIT
		BY229F- / BY229X-		200	400		600	800
VRSM	Peak non-repetitive reverse		-	200	400		600	800	V
	voltage
VRRM	Peak repetitive reverse voltage		-	200	400		600	800	V
VRWM	Crest working reverse voltage		-	150	300		500	600	V
VR	Continuous reverse voltage		-	150	300		500	600	V
I	Average forward current1	square wave; δ = 0.5;	-			8			A
F(AV)		Ths ≤ 83 ˚C
			-			7			A
		sinusoidal; a = 1.57;
IF(RMS)	RMS forward current	Ths ≤ 90 ˚C	-			11			A
		t = 25 μs; δ = 0.5;
IFRM	Peak repetitive forward current		-			16			A
IFSM		Ths ≤ 83 ˚C
	Peak non-repetitive forward	t = 10 ms	-			60			A
	current	t = 8.3 ms	-			66			A
		sinusoidal; Tj = 150 ˚C
		prior to surge; with
I2t	I2t for fusing	reapplied VRWM(max)	-			18			A2s
		t = 10 ms
Tstg	Storage temperature		-40		150				˚C
Tj	Operating junction temperature		-		150				˚C

1. Neglecting switching and reverse current losses.

September 1998

1

Rev 1.200

Philips Semiconductors Product specification

Rectifier diodes		BY229F, BY229X series
fast, soft-recovery
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
Visol	Peak isolation voltage from	SOD100 package; R.H. ≤ 65%; clean and	-	-	1500	V
	both terminals to external	dustfree
	heatsink
Visol	R.M.S. isolation voltage from	SOD113 package; f = 50-60 Hz;	-	-	2500	V
	both terminals to external	sinusoidal waveform; R.H. ≤ 65%; clean
	heatsink	and dustfree
Cisol	Capacitance from pin 1 to	f = 1 MHz	-	10	-	pF
	external heatsink

THERMAL RESISTANCES

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
Rth j-hs	Thermal resistance junction to	with heatsink compound	-	-	4.8	K/W
	heatsink	without heatsink compound	-	-	7.2	K/W
Rth j-a	Thermal resistance junction to	in free air.	-	55	-	K/W
	ambient

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
VF	Forward voltage	IF = 20 A	-	1.5	1.85	V
IR	Reverse current	VR = VRWM; Tj = 125 ˚C	-	0.1	0.4	mA

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT
trr	Reverse recovery time	IF = 1	A; VR > 30 V; -dIF/dt = 50 A/μs	-	100	135	ns
Qs	Reverse recovery charge	IF = 2	A; VR > 30 V; -dIF/dt = 20 A/μs	-	0.5	0.7	μC
dIR/dt	Maximum slope of the reverse	IF = 2	A; -dIF/dt = 20 A/μs	-	50	60	A/μs
	recovery current

September 1998

2

Rev 1.200

Philips Semiconductors	Product specification
Rectifier diodes	BY229F, BY229X series
fast, soft-recovery

I	dI
	F
F	dt
		trr
			time
	Qs	25%	100%
I	I
R
	rrm
	Fig.1. Definition of trr, Qs and Irrm

PF / W			BY329			Ths(max) / C		54
20						D = 1.0
	Vo = 1.25 V
	Rs = 0.03 Ohms
15				0.5				78
10			0.2					102
		0.1
			I		tp	D =	tp
5							T	126
						T	t
0								150
0	2	4	6	8		10	12
			IF(AV) / A

Fig.2. Maximum forward dissipation, PF = f(IF(AV)); square wave current waveform; parameter D = duty cycle = tp/T.

IFS(RMS) / A				BY229
80
70
60	IFSM
50
40
30
20
10
0
1ms	10ms	0.1s	1s	10s
		tp / s

Fig.4. Maximum non-repetitive rms forward current. IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior to surge with reapplied VRWM.

IF / A				BY229F
30
	Tj = 150 C
	Tj = 25 C
20
10
		typ		max
0			1.5
0	0.5	1		2
		VF / V

Fig.5. Typical and maximum forward characteristic; IF = f(VF); parameter Tj

PF / W		BY329		Ths(max) / C
15				78
Vo = 1.25 V				a = 1.57
Rs = 0.03 Ohms
			1.9
10			2.2	102
		2.8
		4
5				126
0				150
0	2	4	6	8
		IF(AV) / A

Fig.3. Maximum forward dissipation, PF = f(IF(AV)); sinusoidal current waveform; parameter a = form

factor = IF(RMS)/IF(AV).

10

Qs / uC

BY329

	Tj = 150 C
	Tj = 25 C	IF = 10 A
		10 A
	2 A	1 A
1		2 A
		1 A
0.1	10
1		100
	-dIF/dt (A/us)

Fig.6. Maximum Qs at Tj = 25˚C and 150˚C

September 1998

3

Rev 1.200