MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3
Preferred Devices
Surface Mount
Schottky Power Rectifier
. . . employing the Schottky Barrier principle in a large area metal±to±silicon power diode. State±of±the±art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.
•Small Compact Surface Mountable Package with J±Bend Leads
•Rectangular Package for Automated Handling
•Highly Stable Oxide Passivated Junction
•Very Low Forward Voltage Drop (0.5 Volts Max @ 3.0 A, TJ = 25°C)
•Excellent Ability to Withstand Reverse Avalanche Energy Transients
•Guardring for Stress Protection
Mechanical Characteristics:
•Case: Epoxy, Molded
•Weight: 217 mg (approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
•Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
•Shipped in 16 mm Tape and Reel, 2500 units per reel
•Polarity: Notch in Plastic Body Indicates Cathode Lead
•Marking: B32, B33, B34, B36
MAXIMUM RATINGS
Please See the Table on the Following Page
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40, 60 VOLTS
SMC
CASE 403
PLASTIC
MARKING DIAGRAM
YWW
B3x
B3x = Device Code x = 2, 3, 4 or 6 Y = Year
W = Work Week
ORDERING INFORMATION
Device |
Package |
Shipping |
|
|
|
MBRS320T3 |
SMC |
2500/Tape & Reel |
|
|
|
MBRS330T3 |
SMC |
2500/Tape & Reel |
|
|
|
MBRS340T3 |
SMC |
2500/Tape & Reel |
|
|
|
MBRS360T3 |
SMC |
2500/Tape & Reel |
|
|
|
Preferred devices are recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2000 |
1 |
Publication Order Number: |
October, 2000 ± Rev. 3 |
|
MBRS340T3/D |
MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3
MAXIMUM RATINGS
Rating |
Symbol |
MBRS320T3 |
MBRS330T3 |
MBRS340T3 |
MBRS360T3 |
Unit |
|
|
|
|
|
|
|
Peak Repetitive Reverse Voltage |
VRRM |
20 |
30 |
40 |
60 |
Volts |
Working Peak Reverse Voltage |
VRWM |
|
|
|
|
|
DC Blocking Voltage |
VR |
|
|
|
|
|
Average Rectified Forward Current |
IF(AV) |
|
3.0 @ TL = 100°C |
|
Amps |
|
|
|
|
4.0 @ TL = 90°C |
|
|
|
Nonrepetitive Peak Surge Current |
IFSM |
80 |
80 |
80 |
80 |
Amps |
(Surge applied at rated load conditions halfwave, |
|
|
|
|
|
|
single phase, 60 Hz) |
|
|
|
|
|
|
|
|
|
|
|
|
|
Operating Junction Temperature |
TJ |
± 65 to +125 |
± 65 to +125 |
± 65 to +125 |
°C |
|
THERMAL CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
Thermal Resistance Ð Junction to Lead |
RθJL |
11 |
11 |
11 |
11 |
°C/W |
ELECTRICAL CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
Maximum Instantaneous Forward Voltage (Note 1.) |
VF |
|
|
|
|
Volts |
(iF = 3.0 A, TJ = 25°C) |
|
0.50 |
0.50 |
0.525 |
0.740 |
|
Maximum Instantaneous Reverse Current (Note 1.) |
iR |
|
|
|
|
mA |
(Rated dc Voltage, TJ = 25°C) |
|
2.0 |
2.0 |
2.0 |
0.5 |
|
(Rated dc Voltage, TJ = 100°C) |
|
20 |
20 |
20 |
20 |
|
1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤ 2.0%.
http://onsemi.com
2
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