Motorola MBD110DWT1, MBD770DWT1, MBD330DWT1 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MBD110DWT1/D

Dual Schottky Barrier Diodes

Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT±363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small six±leaded package. The SOT±363 is ideal for low±power surface mount applications where board space is at a premium, such as portable products.

Surface Mount Comparisons:

	SOT±363	SOT±23
Area (mm2)	4.6	7.6
Max Package PD (mW)	120	225
Device Count	2	1

Space Savings:

Package	1 SOT±23	2 SOT±23
SOT±363	40%	70%

MBD110DWT1

MBD330DWT1

MBD770DWT1

Motorola Preferred Devices

6 4

1

2 3

CASE 419B±01, STYLE 6

SOT±363

The MBD110DW, MBD330DW, and MBD770DW devices are spin±offs of our popular MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT±23 devices. They are designed for high±efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications.

•Extremely Low Minority Carrier Lifetime

•Very Low Capacitance

•Low Reverse Leakage

MAXIMUM RATINGS

	Rating	Symbol	Value	Unit
Reverse Voltage	MBD110DWT1	VR	7.0	Vdc
	MBD330DWT1		30
	MBD770DWT1		70
Forward Power Dissipation		PF	120	mW
TA = 25°C
Junction Temperature		TJ	± 55 to +125	°C
Storage Temperature Range		Tstg	± 55 to +150	°C

DEVICE MARKING

MBD110DWT1 = M4

MBD330DWT1 = T4

MBD770DWT1 = H5

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1996

MBD110DWT1 MBD330DWT1	MBD770DWT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic		Symbol	Min	Typ	Max	Unit
Reverse Breakdown Voltage		V(BR)R				Volts
(IR = 10 μA)	MBD110DWT1		7.0	10	Ð
	MBD330DWT1		30	Ð	Ð
	MBD770DWT1		70	Ð	Ð
Diode Capacitance		CT				pF
(VR = 0, f = 1.0 MHz, Note 1)	MBD110DWT1		Ð	0.88	1.0
Total Capacitance		CT				pF
(VR = 15 Volts, f = 1.0 MHz)	MBD330DWT1		Ð	0.9	1.5
(VR = 20 Volts, f = 1.0 MHz)	MBD770DWT1		Ð	0.5	1.0
Reverse Leakage		IR				μA
(VR = 3.0 V)	MBD110DWT1		Ð	0.02	0.25
(VR = 25 V)	MBD330DWT1		Ð	13	200	nAdc
(VR = 35 V)	MBD770DWT1		Ð	9.0	200	nAdc
Noise Figure		NF				dB
(f = 1.0 GHz, Note 2)	MBD110DWT1		Ð	6.0	Ð
Forward Voltage		VF				Vdc
(IF = 10 mA)	MBD110DWT1		Ð	0.5	0.6
(IF = 1.0 mAdc)	MBD330DWT1		Ð	0.38	0.45
(IF = 10 mA)			Ð	0.52	0.6
(IF = 1.0 mAdc)	MBD770DWT1		Ð	0.42	0.5
(IF = 10 mA)			Ð	0.7	1.0

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data

													MBD110DWT1		MBD330DWT1		MBD770DWT1
								TYPICAL CHARACTERISTICS
										MBD110DWT1
	1.0												100
	0.7
	0.5
A)			VR = 3.0 Vdc									(mA)
m
, REVERSE LEAKAGE (	0.2											, FORWARD CURRENT	10
	0.1													TA = 85°C		TA = ± 40°C
	0.07
	0.05												1.0
															TA = 25°C
R												F
I	0.02											I
									MBD110DWT1							MBD110DWT1
	0.01	40	50	60	70	80	90	100	110	120	130		0.1	0.4	0.5	0.6	0.7	0.8
	30												0.3
				TA, AMBIENT TEMPERATURE (°C)										VF, FORWARD VOLTAGE (VOLTS)

Figure 1. Reverse Leakage

Figure 2. Forward Voltage

	1.0						11
							10		LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
							9			(Test Circuit Figure 5)
	0.9					FIGURENOISE(dB)
CAPACITANCE(pF)							8
							7
	0.8						6
							5
C,	0.7					NF,	4
							3
				MBD110DWT1			2					MBD110DWT1
	0.6	1.0	2.0	3.0	4.0		1	0.2	0.5	1.0	2.0	5.0	10
	0						0.1
		VR, REVERSE VOLTAGE (VOLTS)							PLO, LOCAL OSCILLATOR POWER (mW)

Figure 3. Capacitance

Figure 4. Noise Figure

UHF

NOISE SOURCE

H.P. 349A

NOISE

FIGURE METER

H.P. 342A

LOCAL

OSCILLATOR

DIODE IN

TUNED

MOUNT

IF AMPLIFIER NF = 1.5 dB f = 30 MHz

NOTES ON TESTING AND SPECIFICATIONS

Note 1 ± CC and CT are measured using a capacitance bridge (Boonton Electronics Model 75A or equivalent).

Note 2 ± Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5.

Note 3 ± LS is measured on a package having a short instead of a die, using an impedance bridge (Boonton Radio Model 250A RX Meter).

Figure 5. Noise Figure Test Circuit

Motorola Small±Signal Transistors, FETs and Diodes Device Data

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