Motorola MAC15N, MAC15M, MAC15D Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

TRIACS

Silicon Bidirectional Thyristors

Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.

•Blocking Voltage to 800 Volts

•On-State Current Rating of 15 Amperes RMS at 80°C

•Uniform Gate Trigger Currents in Three Modes

•High Immunity to dv/dt Ð 250 V/ μs minimum at 125°C

•Minimizes Snubber Networks for Protection

•Industry Standard TO-220AB Package

•High Commutating di/dt Ð 9.0 A/ms minimum at 125 °C

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

MAC15

SERIES*

*Motorola preferred devices

TRIACS

15 AMPERES RMS

400 thru 800 VOLTS

MT2

MT1

MT2

G

CASE 221A-06 (TO-220AB)

Style 4

Symbol	Parameter		Value	Unit
VDRM	Peak Repetitive Off-State Voltage (1)			Volts
	(± 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)	MAC15D	400
		MAC15M	600
		MAC15N	800
IT(RMS)	On-State RMS Current		15	A
	(60 Hz, TC = 80°C)
ITSM	Peak Non-repetitive Surge Current		150	A
	(One Full Cycle, 60 Hz, TJ = 125°C)
I2t	Circuit Fusing Consideration (t = 8.3 ms)		93	A2sec
PGM	Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C)		20	Watts
PG(AV)	Average Gate Power (t = 8.3 ms, TC = 80°C)		0.5	Watts
TJ	Operating Junction Temperature Range		± 40 to +125	°C
Tstg	Storage Temperature Range		± 40 to +150	°C
THERMAL CHARACTERISTICS
RqJC	Thermal Resistance Ð Junction to Case		2.0	°C/W
RqJA	Thermal Resistance Ð Junction to Ambient		62.5
TL	Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds		260	°C

(1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola Thyristor Device Data

3±55

MAC15	SERIES
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol	Characteristic		Min	Typ	Max	Unit
OFF CHARACTERISTICS
IDRM	Peak Repetitive Blocking Current	TJ = 25°C	Ð	Ð	0.01	mA
	(VD = Rated VDRM, Gate Open)
		TJ = 125°C	Ð	Ð	2.0
ON CHARACTERISTICS
VTM	Peak On-State Voltage*					Volts
	(ITM = ± 21 A Peak)		Ð	1.2	1.6
IGT	Continuous Gate Trigger Current (VD = 12 V, RL = 100 Ω)		5.0	13	35	mA
	MT2(+), G(+)
	MT2(+), G(±)		5.0	16	35
	MT2(±), G(±)		5.0	18	35
IH	Hold Current					mA
	(VD = 12 V, Gate Open, Initiating Current = ±150 mA)		Ð	20	40
IL	Latch Current (VD = 24 V, IG = 35 mA)		Ð	33	50	mA
	MT2(+), G(+)
	MT2(+), G(±)		Ð	36	80
	MT2(±), G(±)		Ð	33	50
VGT	Gate Trigger Voltage (VD = 12 V, RL = 100 Ω)		0.5	0.75	1.5	Volts
	MT2(+), G(+)
	MT2(+), G(±)		0.5	0.72	1.5
	MT2(±), G(±)		0.5	0.82	1.5
DYNAMIC CHARACTERISTICS
(di/dt)c	Rate of Change of Commutating Current* See Figure 10.		9.0	Ð	Ð	A/ms
	(VD = 400 V, ITM = 6.0 A, Commutating dv/dt = 24 V/μs,	CL = 10 μF
	Gate Open, TJ = 125°C, f = 250 Hz, No Snubber)	LL = 40 mH
dv/dt	Critical Rate of Rise of Off-State Voltage		250	Ð	Ð	V/μs
	(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

	125
	120
(°C)	115						α = 30 and 60°
TEMPERATURE	110
								α = 90°
	105
				α = 180°				α = 120°
	100
CASE	95					DC
,	90
C
T
	85
	80	2	4	6	8	10	12	14	16
	0
			IT(RMS), RMS ON-STATE CURRENT (AMP)

Figure 1. RMS Current Derating

	20							DC	180°
	18
(WATTS)
	16								120°
									90°
	14
POWER									60°
	12
	10
AVERAGE
	8							α = 30°
	6
,
AV	4
P
	2
	0	2	4	6	8	10	12	14	16
	0

IT(RMS), ON-STATE CURRENT (AMP)

Figure 2. On-State Power Dissipation

3±56	Motorola Thyristor Device Data