Motorola MAC310A4, MAC310-8, MAC310-4, MAC310A8, MAC310A6 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MAC310/D

Triacs

Silicon Bidirectional Triode Thyristors

. . . designed primarily for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications.

•Sensitive Gate Triggering in Three Trigger Modes for AC Triggering on Sinking Current Sources (MAC310 Series)

•Four Mode Triggering (10 mA) for Drive Circuits that Source Current (MAC310A Series)

•All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability

•Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation

•Center Gate Geometry for Uniform Current Spreading

MAXIMUM RATINGS (TC = 25°C unless otherwise noted.)

MAC310

Series

MAC310A

Series

TRIACs

10 AMPERES RMS

200 thru 600 VOLTS

MT2 MT1

G

CASE 221A-04 (TO-220AB)

STYLE 4

Rating		Symbol	Value	Unit
Peak Repetitive Off-State Voltage(1) (T = ±40 to 110°C,		V		Volts
J		DRM	200
1/2 Sine Wave 50 to 60 Hz, Gate Open)	MAC310-4, MAC310A4
	MAC310-6, MAC310A6		400
	MAC310-8, MAC310A8		600
On-State RMS Current (TC = 80°C)		IT(RMS)	10	Amps
Full Cycle Sine Wave 50 to 60 Hz
Peak Non-repetitive Surge Current		ITSM	100	Amps
(One Full Cycle 60 Hz, TJ = 110°C)
Circuit Fusing (t = 8.3 ms)		I2t	40	A2s
Peak Gate Current (t p 2 μs)		IGM	±2	Amps
Peak Gate Voltage (t p 2 μs)		VGM	±10	Volts
Peak Gate Power (t p 2 μs)		PGM	20	Watts
Average Gate Power (TC = 80°C, t p 8.3 ms)		PG(AV)	0.5	Watts
Operating Junction Temperature Range		TJ	±40 to 110	°C
Storage Temperature Range		Tstg	±40 to 150	°C
Mounting Torque		Ð	8	in-lb
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant				(continued)
current source such that the voltage ratings of the devices are exceeded.

Motorola, Inc. 1995

MAC310 Series MAC310A Series

TC, CASE TEMPERATURE (°C)

THERMAL CHARACTERISTICS

Characteristic				Symbol			Max			Unit
Thermal Resistance, Junction to Case				RθJC		2.2				°C/W
Thermal Resistance, Junction to Ambient				RθJA		60				°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Characteristic		Symbol			Min		Typ	Max			Unit
Peak Blocking Current	TJ = 25°C	IDRM			Ð		Ð	10			mA
(VD = Rated VDRM, TJ = 110°C)					Ð		Ð	2
Peak On-State Voltage		VTM			Ð		Ð	2			Volts
(ITM = 14 A Peak, Pulse Width p 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc)		IGT									mA
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(±); MT2(±), G(±)					Ð		Ð	5
MT2(±), G(+) ªAº Suffix Only					Ð		Ð	10
Gate Trigger Voltage (Continuous dc)		VGT									Volts
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(±); MT2(±), G(±)					Ð		Ð	2
MT2(±), G(+) ªAº Suffix Only					Ð		Ð	2.5
(VD = Rated VDRM, TC = 110°C, RL = 10 k)
All Trigger Modes					0.2		Ð	Ð
Holding Current		IH			Ð		Ð	15			mA
(VD = 12 V, ITM = 200 mA, Gate Open)
Gate-Controlled Turn-On Time		tgt			Ð		1.5	Ð			μs
(VD = Rated VDRM, ITM = 14 A Peak, IG = 30 mA)
Critical Rate of Rise of Off-State Voltage		dv/dt			Ð		25	Ð			V/μs
(VD = Rated VDRM, Exponential Waveform, TC = 110°C)
Critical Rate of Rise of Commutation Voltage		dv/dt(c)			Ð		5	Ð			V/μs
(VD = Rated VDRM, ITM = 14 A Peak,
Commutating di/dt = 5 A/ms, Gate Unenergized, TC = 80°C)

						(WATTS)	20
120							16
						POWER						dc
110							12					180°
												120°
						AVERAGE,						90°
100							8					60°
												30°
					30°
90					60°	AV
					90°		4
						P
					180°
80					dc		0
0	2	4	6	8	10		0	2	4	6	8	10
	IT(RMS), RMS ON-STATE CURRENT (AMPS)							IT(RMS), RMS ON-STATE CURRENT (AMPS)

Figure 1. RMS Current Derating	Figure 2. On-State Power Dissipation

2	Motorola Thyristor Device Data