Motorola MAC218-4, MAC218A6, MAC218A4, MAC218A10, MAC218-6 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MAC218/D

Triacs

Silicon Bidirectional Thyristors

. . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies.

•Blocking Voltage to 800 Volts

•Glass Passivated Junctions for Greater Parameter Uniformity and Stability

•TO-220 Construction Low Thermal Resistance, High Heat Dissipation and Durability

•Gate Triggering Guaranteed in Three Modes (MAC218 Series) or Four Modes (MAC218A Series)

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

MAC218

Series

MAC218A

Series

TRIACs

8 AMPERES RMS

200 thru 800 VOLTS

MT2 MT1

G

CASE 221A-04 (TO-220AB)

STYLE 4

Rating		Symbol	Value	Unit
Peak Repetitive Off-State Voltage(1)		VDRM		Volts
(Gate Open, TJ = 25 to 125°C)	MAC218-4, MAC218A4		200
	MAC218-6, MAC218A6		400
	MAC218-8, MAC218A8		600
	MAC218-10, MAC218A10		800
On-State Current RMS		IT(RMS)	8	Amps
(Conduction Angle = 360°, TC = +80°C)
Peak Non-repetitive Surge Current		ITSM	100	Amps
(One Full Cycle, 60 Hz, TC = 80°C, preceded and followed by rated current)
Fusing Current		I2t	40	A2s
(t = 8.3 ms)
Peak Gate Power		PGM	16	Watts
(TC = +80°C, Pulse Width = 2 μs)
Average Gate Power		PG(AV)	0.35	Watt
(TC = +80°C, t = 8.3 ms)
Peak Gate Trigger Current		IGTM	4	Amps
(Pulse Width = 1 μs)
Operating Junction Temperature Range		TJ	±40 to +125	°C
Storage Temperature Range		Tstg	±40 to +150	°C

1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Motorola, Inc. 1995

MAC218 Series MAC218A Series

THERMAL CHARACTERISTICS

Characteristic			Symbol			Max			Unit
Thermal Resistance, Junction to Case			RθJC			2.2			°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic		Symbol			Min	Typ	Max			Unit
Peak Blocking Current			IDRM							μA
(VD = Rated VDRM, gate open) TJ = 25°C					Ð	Ð	10
TJ = 125°C					Ð	Ð	2			mA
Peak On-State Voltage (Either Direction)			VTM		Ð	1.7	2			Volts
(ITM = 11.3 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle t 2%)
Gate Trigger Current (Continuous dc)			IGT							mA
(VD = 12 Vdc, RL = 12Ω)
Trigger Mode
MT2(+), Gate(+); MT2(+), Gate(±); MT2(±), Gate(±)					Ð	Ð	50
MT2(±), Gate(+) ªAº SUFFIX ONLY					Ð	Ð	75
Gate Trigger Voltage (Continuous dc)			VGT							Volts
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)					Ð	0.9	2
MT2(+), G(±)					Ð	0.9	2
MT2(±), G(±)					Ð	1.1	2
MT2(±), G(+) ªAº SUFFIX ONLY					Ð	1.4	2.5
(Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C)
MT2(+), G(+); MT2(±), G(±); MT2(+), G(±)					0.2	Ð	Ð
MT2(±), G(+) ªAº SUFFIX ONLY					0.2	Ð	Ð
Holding Current (Either Direction)			IH		Ð	Ð	50			mA
(VD = 24 Vdc, Gate Open,
Initiating Current = 200 mA)
Critical Rate of Rise of Commutating Off-State Voltage		dv/dt(c)			Ð	5	Ð			V/μs
(VD = Rated VDRM, ITM = 11.3 A, Commutating
di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C)
Critical Rate of Rise of Off-State Voltage			dv/dt		Ð	100	Ð			V/μs
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open,
TJ = 125°C)

TEMPERATURE (°C)

TC, MAXIMUM ALLOWABLE CASE

				FIGURE 1 Ð CURRENT DERATING														(WATTS)			FIGURE 2 Ð POWER DISSIPATION
125																			10
95																		DISSIPATIONPOWER	4.0
115																			8.0
105																		AVERAGE,	6.0
85																			2.0
																		(AV)
75																			0
																		P
0		1.0		2.0		3.0		4.0		5.0		6.0		7.0		8.0			0		1.0		2.0		3.0		4.0		5.0		6.0		7.0		8.0
				IT(RMS), RMS ON STATE CURRENT (AMPS)																			IT(RMS) RMS ON STATE CURRENT (AMPS)

2	Motorola Thyristor Device Data