Motorola MAC223A8FP, MAC223A6FP, MAC223A10FP, MAC223-8FP, MAC223-6FP Datasheet
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MAC223FP/D
Triacs
Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as lighting systems, heater controls, motor controls and power supplies; or wherever full-wave silicon- gate-controlled devices are needed.
•Off-State Voltages to 800 Volts
•All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability
•Small, Rugged Thermowatt Construction for Thermal Resistance and High Heat Dissipation
•Gate Triggering Guaranteed in Three Modes (MAC223FP Series) or
Four Modes (MAC223AFP Series)
MT2
MT1
G
MAXIMUM RATINGS (TJ = 25° unless otherwise noted.)
MAC223FP
Series
MAC223AFP
Series
ISOLATED TRIACs
THYRISTORS
25 AMPERES RMS
200 thru 800 VOLTS
CASE 221C-02
STYLE 3
Rating |
Symbol |
Value |
Unit |
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Peak Repetitive Off-State Voltage(1) (T = ±40 to +125°C, |
V |
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Volts |
J |
DRM |
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1/2 Sine Wave 50 to 60 Hz, Gate Open) |
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MAC223-4FP, MAC223A4FP |
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200 |
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MAC223-6FP, MAC223A6FP |
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400 |
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MAC223-8FP, MAC223A8FP |
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600 |
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MAC223-10FP, MAC223A10FP |
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800 |
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On-State RMS Current (T = +80°C) Full Cycle Sine Wave 50 to 60 Hz(2) |
I |
25 |
Amps |
C |
T(RMS) |
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Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = 80°C, |
ITSM |
250 |
Amps |
preceded and followed by rated current) |
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Circuit Fusing (t = 8.3 ms) |
I2t |
260 |
A2s |
Peak Gate Power (t p 2 μs) |
PGM |
20 |
Watts |
Average Gate Power (TC = +80°C, t p 8.3 ms) |
PG(AV) |
0.5 |
Watt |
Peak Gate Current (t p 2 μs) |
IGM |
2 |
Amps |
Peak Gate Voltage (t p 2 μs) |
VGM |
±10 |
Volts |
RMS Isolation Voltage (TA = 25°C, Relative Humidity p 20%) |
V(ISO) |
1500 |
Volts |
Operating Junction Temperature |
TJ |
±40 to +125 |
°C |
Storage Temperature Range |
Tstg |
±40 to +150 |
°C |
Mounting Torque |
Ð |
8 |
in. lb. |
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1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
2.The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.
THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
RθJC |
1.2 |
°C/W |
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Thermal Resistance, Case to Sink |
RθCS |
2.2 |
°C/W |
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Thermal Resistance, Junction to Ambient |
RθJA |
60 |
°C/W |
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Motorola, Inc. 1995
MAC223FP Series MAC223AFP |
Series |
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ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.) |
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Characteristic |
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Symbol |
Min |
Typ |
Max |
Unit |
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Peak Blocking Current(1) |
T = 25°C |
I |
Ð |
Ð |
10 |
μA |
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J |
DRM |
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(VD = Rated VDRM, Gate Open) |
TJ = 125°C |
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Ð |
Ð |
2 |
mA |
Peak On-State Voltage |
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VTM |
Ð |
1.4 |
1.85 |
Volts |
(ITM = 35 A Peak, Pulse Width p 2 ms, Duty Cycle p 2%) |
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Gate Trigger Current (Continuous dc) |
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IGT |
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mA |
(VD = 12 V, RL = 100 Ω) |
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MT2(+), G(+); MT2(±), G(±); MT2(+), G(±) |
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Ð |
20 |
50 |
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MT2(±), G(+) ªAº SUFFIX ONLY |
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Ð |
30 |
75 |
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Gate Trigger Voltage (Continuous dc) |
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VGT |
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Volts |
(VD = 12 V, RL = 100 Ω) |
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MT2(+), G(+); MT2(±), G(±); MT(+), G(±) |
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Ð |
1.1 |
2 |
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MT2(±), G(+) ªAº SUFFIX ONLY |
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Ð |
1.3 |
2.5 |
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(VD = Rated VDRM, TJ = 125°C, RL = 10 k) |
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0.2 |
0.4 |
Ð |
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MT(+), G(+); MT2(±), G(±); MT2(+), G(±) |
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MT2(±), G(+) ªAº SUFFIX ONLY |
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0.2 |
0.4 |
Ð |
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Holding Current |
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IH |
Ð |
10 |
50 |
mA |
(VD = 12 V, ITM = 200 mA, Gate Open) |
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Gate Controlled Turn-On Time |
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tgt |
Ð |
1.5 |
Ð |
μs |
(VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA) |
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Critical Rate of Rise of Off-State Voltage |
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dv/dt |
Ð |
40 |
Ð |
V/μs |
(VD = Rated VDRM, Exponential Waveform, TC = 125°C) |
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Critical Rate of Rise of Commutation Voltage |
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dv/dt(c) |
Ð |
5 |
Ð |
V/μs |
(VD = Rated VDRM, ITM = 35 A Peak, Commutating |
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di/dt = 12.6 A/ms, Gate Unenergized, TC = 80°C) |
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1.Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage applied exceeds the rated blocking voltage.
(°C) |
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TEMPERATURE |
125 |
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115 |
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CASE |
105 |
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ALLOWABLE |
95 |
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MAXIMUM, |
85 |
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75 |
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C |
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0 |
5 |
10 |
15 |
20 |
25 |
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T |
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IT(RMS), RMS ON-STATE CURRENT (AMPS)
Figure 1. RMS Current Derating
(WATTS) |
40 |
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DISSIPATION |
30 |
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POWER |
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20 |
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AVERAGE, |
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10 |
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D(AV) |
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0 |
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P |
0 |
5 |
10 |
15 |
20 |
25 |
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IT(RMS), RMS ON-STATE CURRENT (AMPS)
Figure 2. On-State Power Dissipation
2 |
Motorola Thyristor Device Data |
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