Motorola MAC228-10FP, MAC228A8FP, MAC228A6FP, MAC228A4FP, MAC228A10FP Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MAC228FP/D

Triacs

Silicon Bidirectional Triode Thyristors

. . . designed primarily for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications.

•Four Mode Triggering for Drive Circuits that Source Current

•All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability

•Small, Rugged, Thermowatt Construction for Low Thermal resistance and High Heat Dissipation

•Center Gate Geometry for Uniform Current Spreading

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

MAC228FP

Series

MAC228AFP

Series

TRIACs

8 AMPERES RMS

200 thru 800 VOLTS

MT2

MT1

G

CASE 221C-02

STYLE 3

Rating	Symbol	Value	Unit
Peak Repetitive Off-State Voltage(1)	VDRM		Volts
(TJ = ±40 to 110°C
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC228-4FP, MAC228A4FP		200
MAC228-6FP, MAC228A6FP		400
MAC228-8FP, MAC228A8FP		600
MAC228-10FP, MAC228A10FP		800
On-State RMS Current (TC = 80°C)	IT(RMS)	8	Amps
Full Cycle Sine Wave 50 to 60 Hz
Peak Non-repetitive Surge Current	ITSM	80	Amps
(One Full Cycle 60 Hz, TJ = 110°C)
Circuit Fusing	I2t	26	A2s
(t = 8.3 ms)
Peak Gate Current (t p 2 μs)	IGM	±2	Amps
Peak Gate Voltage (t p 2 μs)	VGM	±10	Volts
Peak Gate Power (t p 2 μs)	PGM	20	Watts
Average Gate Power (TC = 80°C, t p 8.3 ms)	PG(AV)	0.5	Watts
Operating Junction Temperature Range	TJ	±40 to 110	°C
Storage Temperature Range	Tstg	±40 to 150	°C
Mounting Torque		8	in. lb.

1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

2.The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.

Motorola, Inc. 1995

MAC228FP Series MAC228AFP Series

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Thermal Resistance, Junction to Case	RθJC	2.2	°C/W
Thermal Resistance, Case to Sink	RθCS	2.2 (typ)	°C/W
Thermal Resistance, Junction to Ambient	RθJA	60	°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)

Characteristic	Symbol	Min	Typ	Max	Unit
Peak Blocking Current	IDRM				μA
(VD = Rated VDRM, Gate Open) TJ = 25°C		Ð	Ð	10
TJ = 110°C		Ð	Ð	2	mA
Peak On-State Voltage	VTM	Ð	Ð	1.8	Volts
(ITM = 11 A Peak, Pulse Width p 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc)	IGT				mA
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(±); MT2(±), G(±)		Ð	Ð	5
MT2(±), G(+) ªAº Suffix Only		Ð	Ð	10
Gate Trigger Voltage (Continuous dc)	VGT				Volts
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(±); MT2(±), G(±)		Ð	Ð	2
MT2(±), G(+) ªAº Suffix Only		Ð	Ð	2.5
(VD = Rated VDRM, TC = 110°C, RL = 10 k)
MT2(+), G(+); MT2(+), G(±); MT2(±), G(±)		0.2	Ð	Ð
MT2(±), G(+) ªAº Suffix Only		0.2	Ð	Ð
Holding Current	IH	Ð	Ð	15	mA
(VD = 12 Vdc, ITM = 200 mA, Gate Open)
Gate-Controlled Turn-On Time	tgt	Ð	1.5	Ð	μs
(VD = Rated VDRM, ITM = 16 A Peak, IG = 30 mA)
Critical Rate of Rise of Off-State Voltage	dv/dt	Ð	25	Ð	V/μs
(VD = Rated VDRM, Exponential Waveform, TC = 110°C)
Critical Rate of Rise of Commutation Voltage	dv/dt(c)	Ð	5	Ð	V/μs
(VD = Rated VDRM, ITM = 11.3 A,
Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C)

FIGURE 1 ± RMS CURRENT DERATING

	110
( °C)	104					α = 30°
							60°
TEMPERATURE							90°	120°
	98								180°
	92			α
,CASE			α
	86
C		α = CONDUCTION ANGLE
T							dc
	80		2.0	3.0	4.0		6.0	7.0	8.0
	0	1.0				5.0
			IT(RMS), RMS ON-STATE CURRENT (AMP)

FIGURE 2 ± ON-STATE POWER DISSIPATION

	10						dc
(WATTS)	8.0		α			α = 180°
						120°
		α
POWER						90°
	6.0
		α = CONDUCTION ANGLE			60°
, AVERAGE	4.0	TJ ≈ 110°C		30°
(AV)	2.0
P
	0
	0	1.0	2.0	3.0	4.0	5.0	6.0	7.0	8.0

IT(RMS), RMS ON-STATE CURRENT (AMP)

2	Motorola Thyristor Device Data