Motorola MAC229A8, MAC229A6, MAC229A4, MAC229A10, MAC229-8 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MAC229/D

Triacs

Silicon Bidirectional Triode Thyristors

. . . designed primarily for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications.

•All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability

•Small, Rugged, Thermowatt Construction for Low Thermal resistance and High Heat Dissipation

•Center Gate Geometry for Uniform Current Spreading

•Gate Triggering Guaranteed in Three Modes (MAC229 Series) or Four Modes (MAC229A Series)

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

MAC229

Series

MAC229A

Series

TRIACs

8 AMPERES RMS

200 thru 800 VOLTS

MT2	MT1
	G

CASE 221A-04 (TO-220AB)

STYLE 4

Rating	Symbol	Value		Unit
Peak Repetitive Off-State Voltage(1)	VDRM			Volts
(TJ = ±40 to 110°C
1/2 Sine ave 50 to 60 Hz, Gate Open)
MAC229-4, MAC229A4		200
MAC229-6, MAC229A6		400
MAC229-8, MAC229A8		600
MAC229-10, MAC229A10		800
On-State RMS Current (TC = 80°C)	IT(RMS)	8		Amps
Full Cycle Sine Wave 50 to 60 Hz
Peak Non±repetitive Surge Current	ITSM	80		Amps
(One Full Cycle 60 Hz, TJ = 110°C)
Circuit Fusing	I2t	26		A2s
(t = 8.3 ms)
Peak Gate Current (t p 2 μs)	IGM	±2		Amps
Peak Gate Voltage (t p 2 μs)	VGM	±10		Volts
Peak Gate Power (t p 2 μs)	PGM	20		Watts
Average Gate Power	PG(AV)	0.5		Watts
(TC = 80°C, t p 8.3 ms)
Operating Junction Temperature Range	TJ	±40 to 110		°C
Storage Temperature Range	Tstg	±40 to 150		°C
Mounting Torque		8		in. lb.
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source				(cont.)
such that the voltage ratings of the devices are exceeded.

Motorola, Inc. 1995

MAC229 Series MAC229A Series

THERMAL CHARACTERISTICS

Characteristic				Symbol			Max			Unit
Thermal Resistance, Junction to Case				RθJC		2.2				°C/W
Thermal Resistance, Junction to Ambient				RθJA		60				°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Characteristic		Symbol			Min		Typ	Max			Unit
Peak Blocking Current(1)		IDRM									μA
(VD = Rated VDRM, Gate Open) TJ = 25°C					Ð		Ð	10
TJ = 110°C					Ð		Ð	2			mA
Peak On-State Voltage		VTM			Ð		Ð	1.8			Volts
(ITM = 11 A Peak, Pulse Width p 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc)		IGT									mA
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(±); MT2(±), G(±)					Ð		Ð	10
MT2(±), G(+) ªAº SUFFIX ONLY					Ð		Ð	15
Gate Trigger Voltage (Continuous dc)		VGT									Volts
(VD = 12 V, RL = 100 Ω)					Ð		Ð	2
MT2(+), G(+); MT2(+), G(±); MT2(±), G(±)
MT2(±), G(+) ªAº SUFFIX ONLY					Ð		Ð	2.5
(VD = Rated VDRM, TC = 110°C, RL = 10 k)
MT2(+), G(+); MT2(+), G(±); MT2(±), G(±);	All Types				0.2		Ð	Ð
MT2(±), G(+) ªAº SUFFIX ONLY	MAC229 series				0.2		Ð	Ð
Holding Current		IH			Ð		Ð	15			mA
(VD = 12 Vdc, ITM = 200 mA, Gate Open)
Gate-Controlled Turn-On Time		tgt			Ð		1.5	Ð			μs
(VD = Rated VDRM, ITM = 16 A Peak, IG = 30 mA)
Critical Rate of Rise of Off-State Voltage		dv/dt			Ð		25	Ð			V/μs
(VD = Rated VDRM, Exponential Waveform, TC = 110°C)
Critical Rate of Rise of Commutation Voltage		dv/dt(c)			Ð		5	Ð			V/μs
(VD = Rated VDRM, ITM = 11.3 A,
Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C)

1.Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage applied exceeds the rated blocking voltage.

	110
( °C)	104					α = 30°
							60°
TEMPERATURE							90°	120°
	98								180°
	92			α
, CASE			α
	86
C
T		α = CONDUCTION ANGLE					dc
	80		2.0	3.0	4.0		6.0	7.0	8.0
	0	1.0				5.0
			IT(RMS), RMS ON-STATE CURRENT (AMP)

	10						dc
(WATTS)	8.0		α			α = 180°
						120°
		α
						90°
POWER
	6.0
		α = CONDUCTION ANGLE			60°
, AVERAGE	4.0	TJ ≈ 110°		30°
(AV)	2.0
P
	0
	0	1.0	2.0	3.0	4.0	5.0	6.0	7.0	8.0
			IT(RMS), RMS ON-STATE CURRENT (AMP)

2	Motorola Thyristor Device Data