Motorola MAC210A6, MAC210A4, MAC210A10, MAC210-8, MAC210-6 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Triacs

Silicon Bidirectional Thyristors

. . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.

•Blocking Voltage to 800 Volts

•All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability

•Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability

•Gate Triggering Guaranteed in Three Modes (MAC210 Series) or Four Modes (MAC210A Series)

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

MAC210

Series

MAC210A

Series

TRIACs

10 AMPERES RMS

200 thru 800 VOLTS

MT2 MT1

G

CASE 221A-04 (TO-220AB)

STYLE 4

Rating		Symbol	Value	Unit
Repetitive Peak Off-State Voltage(1)		VDRM		Volts
(TJ = ±40 to +125°C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)	MAC210-4, MAC210A4		200
	MAC210-6, MAC210A6		400
	MAC210-8, MAC210A8		600
	MAC210-10, MAC210A10		800
On-State Current RMS (TC = +70°C)		IT(RMS)	10	Amps
Full Cycle Sine Wave 50 to 60 Hz
Peak Non-repetitive Surge Current		ITSM	100	Amps
(One Full Cycle, 60 Hz, TC = +70°C)
Preceded and followed by Rated Current
Circuit Fusing Considerations		I2t	40	A2s
(t = 8.3 ms)
Peak Gate Power		PGM	20	Watts
(TC = +70°C, Pulse Width = 10 μs)
Average Gate Power (TC = +70°C, t = 8.3 ms)		PG(AV)	0.35	Watt
Peak Gate Current		IGM	2	Amps
(TC = +70°C, Pulse Width = 10 μs)
Operating Junction Temperature Range		TJ	±40 to +125	°C
Storage Temperature Range		Tstg	±40 to +125	°C

(1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Motorola Thyristor Device Data

3±75

MAC210 Series MAC210A Series

THERMAL CHARACTERISTICS

Characteristic			Symbol			Max			Unit
Thermal Resistance, Junction to Case			RθJC			2.2			°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic		Symbol			Min	Typ	Max			Unit
Peak Blocking Current			IDRM							μA
(VD = Rated VDRM, Gate Open) TJ = 25°C					Ð	Ð	10
TJ = +125°C					Ð	Ð	2			mA
Peak On-State Voltage (Either Direction)			VTM		Ð	1.2	1.65			Volts
(ITM = 14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc)			IGT							mA
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)					Ð	12	50
MT2(+), G(±)					Ð	12	50
MT2(±), G(±)					Ð	20	50
MT2(±), G(+) ªAº SUFFIX ONLY					Ð	35	75
Gate Trigger Voltage (Continuous dc)			VGT							volts
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)					Ð	0.9	2
MT2(+), G(±)					Ð	0.9	2
MT2(±), G(±)					Ð	1.1	2
MT2(±), G(+) ªAº SUFFIX ONLY					Ð	1.4	2.5
(Main Terminal Voltage = Rated VDRM, RL = 10 k ohms,
TJ = +125°C)
MT2(+), G(+); MT2(±), G(±); MT2(+), G(±)					0.2	Ð	Ð
MT2(±), G(+) ªAº SUFFIX ONLY					0.2	Ð	Ð
Holding Current (Either Direction)			IH		Ð	6	50			mA
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 500 mA, TC = +25°C)
Turn-On Time			tgt		Ð	1.5	Ð			μs
(Rated VDRM, ITM = 14 A)
(IGT = 120 mA, Rise Time = 0.1 μs, Pulse Width = 2 μs)
Critical Rate of Rise of Commutation Voltage		dv/dt(c)			Ð	5	Ð			V/μs
(VD = Rated VDRM, ITM = 14 A, Commutating di/dt = 5.0 A/ms,
Gate Unenergized, TC = 70°C)
Critical Rate of Rise of Off-State Voltage			dv/dt		Ð	100	Ð			V/μs
(VD = Rated VDRM, Exponential Voltage Rise,
Gate Open, TC = +70°C)

3±76	Motorola Thyristor Device Data