Motorola MAC4DSN, MAC4DSM Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MAC4DSM/D

	TRIACS						MAC4DSM
							MAC4DSN
	Silicon Bidirectional Thyristors
							Motorola Preferred Devices
	Designed for high volume, low cost, industrial and consumer applications
	such as motor control; process control; temperature, light and speed control.
	• Small Size Surface Mount DPAK Package							TRIACS
	• Passivated Die for Reliability and Uniformity
							4.0 AMPERES RMS
	• Blocking Voltage to 800 V
				MT2			600 thru 800 VOLTS
	• On±State Current Rating of 4.0 Amperes RMS at 108°C
	• Low IGT Ð 10 mA Maximum in 3 Quadrants
	• High Immunity to dv/dt Ð 50 V/ ms at 125°C
	ORDERING INFORMATION	G								MT2
	• To Obtain ªDPAKº in Surface Mount Leadform (Case 369A)						MT1
	Shipped in Sleeves Ð No Suffix, i.e. MAC4DSN			MT1				G
	Shipped in 16 mm Tape and Reel Ð Add ªT4º Suffix to Device Number,						MT2
	i.e. MAC4DSNT4						CASE 369A±13
	• To Obtain ªDPAKº in Straight Lead Version (Case 369) Shipped in Sleeves Ð
								STYLE 6
	Add ª±1º Suffix to Device Number, i.e. MAC4DSN±1

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating				Symbol	Value	Unit
Peak Repetitive Off±State Voltage (1)				V		Volts
(TJ = ±40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)			MAC4DSM	DRM	600
			MAC4DSN		800
On±State RMS Current				IT(RMS)		Amps
(Full Cycle Sine Wave, 60 Hz, TC = 108°C)					4.0
Peak Non±Repetitive Surge Current				ITSM
(One Full Cycle, 60 Hz, TJ = 125°C)					40
Circuit Fusing Consideration (t = 8.3 msec)				I2t	6.6	A2sec
Peak Gate Power				PGM		Watts
(Pulse Width ≤ 10 msec, TC = 108°C)					0.5
Average Gate Power				PG(AV)
(t = 8.3 msec, TC = 108°C)					0.1
Peak Gate Current (Pulse Width ≤ 10	sec,m	TC = 108°C)		IGM	0.2	Amps
Peak Gate Voltage (Pulse Width ≤ 10	sec,m	TC = 108°C)		VGM	5.0	Volts
Operating Junction Temperature Range				TJ	±40 to 125	°C
Storage Temperature Range				Tstg	±40 to 150
THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Thermal Resistance Ð Junction to Case	RqJC	3.5	°C/W
Ð Junction to Ambient	RqJA	88
Ð Junction to Ambient (2)	RqJA	80
Maximum Lead Temperature for Soldering Purposes (3)	T	260	°C
	L

(1)VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded.

(2)Surface mounted on minimum recommended pad size.

(3)1/8″ from case for 10 seconds.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Thyristor Device Data

Motorola, Inc. 1997

MAC4DSM MAC4DSN

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristics		Symbol	Min	Typ	Max	Unit
Peak Repetitive Blocking Current	TJ = 25°C	IDRM				mA
(VD = Rated VDRM, Gate Open)			Ð	Ð	0.01
	TJ = 125°C		Ð	Ð	2.0
Peak On±State Voltage (1)		V				Volts
(ITM = ± 6.0 A)		TM	Ð	1.3	1.6
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W)		IGT	2.9	4.0	10	mA
MT2(+), G(+)
MT2(+), G(±)			2.9	5.0	10
MT2(±), G(±)			2.9	7.0	10
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W)		VGT	0.5	0.7	1.3	Volts
MT2(+), G(+)
MT2(+), G(±)			0.5	0.65	1.3
MT2(±), G(±)			0.5	0.7	1.3
MT2(+), G(+); MT2(+), G(±); MT2(±), G(±)	TJ = 125°C		0.2	0.4	Ð
Holding Current		IH				mA
(VD = 12 V, Gate Open, IT = ± 200 mA)			2.0	5.5	15
Latching Current (VD = 12 V, IG = 10 mA)		IL				mA
MT2(+), G(+)			Ð	6.0	30
MT2(+), G(±)			Ð	10	30
MT2(±), G(±)			Ð	6.0	30
DYNAMIC CHARACTERISTICS

Characteristics	Symbol	Min	Typ	Max	Unit
Rate of Change of Commutating Current (1)	di/dt(c)				A/ms
(VD = 400 V, ITM = 3.5 A, Commutating dv/dt = 10 V/msec, Gate Open,		3.0	4.0	Ð
TJ = 125°C, f = 500 Hz, CL = 5.0 mF, LL = 20 mH, No Snubber)
See Figure 15
Critical Rate of Rise of Off±State Voltage	dv/dt				V/ms
(VD = 0.67 X Rated VDRM, Exponential Waveform,		50	175	Ð
Gate Open, TJ = 125°C)
(1) Pulse test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.

2	Motorola Thyristor Device Data

°C)	125
(
TEMPERATURE	120					a = 30°
								60°
									90°
CASE
	115
ALLOWABLE				α
			α
	110	a = CONDUCTION ANGLE					120°
MAXIMUM							180°		dc
	105
	0	0.5	1.0	1.5	2.0	2.5	3.0	3.5	4.0
,
C			IT(RMS), RMS ON±STATE CURRENT (AMPS)
T

			MAC4DSM		MAC4DSN
(WATTS)	6.0					dc
					°
				180
	5.0	α
DISSIPATION				120°
		α
				90°
	4.0
		a = CONDUCTION ANGLE
POWER	3.0
	2.0
, AVERAGE						60°
				a = 30°
	1.0
(AV)	0
P		1.0	2.0	3.0		4.0
	0
		IT(RMS), RMS ON±STATE CURRENT (AMPS)

Figure 1. RMS Current Derating

Figure 2. On±State Power Dissipation

CURRENT(AMPS)	100						(NORMALIZED)	1.0
		TYPICAL @ TJ = 25°C
	10			MAXIMUM @ TJ = 125°C
ON±STATE							RESISTANCE
								0.1
	1.0		MAXIMUM @ TJ = 25°C
INSTANTANEOUS,							, TRANSIENT
	0.1						(t)	0.01
							r
T	0	1.0	2.0	3.0	4.0	5.0
I
		VT, INSTANTANEOUS ON±STATE VOLTAGE (VOLTS)

			ZqJC(t) = RqJC(t)Sr(t)
0.1	1.0	10	100	1000	10 k

t, TIME (ms)

Figure 3. On±State Characteristics

Figure 4. Transient Thermal Response

	18		Q3							1.0
	16								GATE TRIGGER VOLTAGE(VOLTS)
, GATE TRIGGER CURRENT (mA)
	14									0.8
	12
	10		Q2							0.6
	8.0
	6.0	Q1
	4.0									0.4
GT									,
I	2.0								GT
									V
	0									0.2
	±50		±25	0	25	50	75	100	125
				TJ, JUNCTION TEMPERATURE (°C)

	Q3	Q1
Q2
±50	±25	0	25	50	75	100	125
		TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Typical Gate Trigger Current versus	Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature	Junction Temperature

Motorola Thyristor Device Data

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