Motorola MAC210A6FP, MAC210A4FP, MAC210-8FP, MAC210A8FP, MAC210-6FP Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MAC210FP/D

Triacs

Silicon Bidirectional Thyristors

. . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.

MAC210FP

Series

MAC210AFP

Series

ISOLATED TRIACs

THYRISTORS

10 AMPERES RMS

200 thru 800 VOLTS

• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Gate Triggering Guaranteed in Three Modes (MAC210FP Series)
or Four Modes (MAC210AFP Series)
MT2	MT1	CASE 221C-02
G		STYLE 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

Rating	Symbol	Value	Unit
Repetitive Peak Off-State Voltage(1) (T = ±40 to +125°C)	V		Volts
J	DRM
1/2 Sine Wave 50 to 60 Hz, Gate Open
MAC210-4FP, MAC210A4FP		200
MAC210-6FP, MAC210A6FP		400
MAC210-8FP, MAC210A8FP		600
MAC210-10FP, MAC210A10FP		800
On-State RMS Current (T = +70°C) Full Cycle Sine Wave 50 to 60 Hz(2)	I	10	Amps
C	T(RMS)
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +70°C)	ITSM	100	Amps
preceded and followed by rated current
Circuit Fusing (t = 8.3 ms)	I2t	40	A2s
Peak Gate Power (TC = +70°C, Pulse Width = 10 μs)	PGM	20	Watts
Average Gate Power (TC = +70°C, t = 8.3 ms)	PG(AV)	0.35	Watt
Peak Gate Current (TC = +70°C, Pulse Width = 10 μs)	IGM	2	Amps
RMS Isolation Voltage (TA = 25°C, Relative Humidity p 20%)	V(ISO)	1500	Volts
Operating Junction Temperature	TJ	±40 to +125	°C
Storage Temperature Range	Tstg	±40 to +125	°C

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Thermal Resistance, Junction to Case	RθJC	2.2	°C/W
Thermal Resistance, Case to Sink	RθCS	2.2 (typ)	°C/W
Thermal Resistance, Junction to Ambient	RθJA	60	°C/W

1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

2.ThecasetemperaturereferencepointforallTCmeasurementsisapointonthecenterleadofthepackageascloseaspossibletotheplasticbody.

Motorola, Inc. 1995

MAC210FP Series MAC210AFP	Series
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic		Symbol	Min	Typ	Max	Unit
Peak Blocking Current (Either Direction)		IDRM				μA
(VD = Rated VDRM, Gate Open) TJ = 25°C			Ð	Ð	10
TJ = +125°C			Ð	Ð	2	mA
Peak On-State Voltage (Either Direction)		VTM	Ð	1.2	1.65	Volts
(ITM = 14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc)		IGT				mA
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms
Minimum Gate Pulse Width = 2 μs)
MT2(+), G(+)			Ð	12	50
MT2(+), G(±)			Ð	12	50
MT2(±), G(±)			Ð	20	50
MT2(±), G(+) ªAº SUFFIX ONLY			Ð	35	75
Gate Trigger Voltage (Continuous dc)		VGT				Volts
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms
Minimum Gate Pulse Width = 2 μs)
MT2(+), G(+)			Ð	0.9	2
MT2(+), G(±)			Ð	0.9	2
MT2(±), G(±)			Ð	1.1	2
MT2(±), G(+) ªAº SUFFIX ONLY			Ð	1.4	2.5
(Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C
MT2(+), G(+); MT2(+), G(±); MT2(±), G(±)			0.2	Ð	Ð
MT2(±), G(+) ªAº SUFFIX ONLY			0.2	Ð	Ð
Holding Current (Either Direction)		IH	Ð	6	50	mA
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 500 mA, TC = +25°C)
Turn-On Time		tgt	Ð	1.5	Ð	μs
(Rated VDRM, ITM = 14 A, IGT = 120 mA,
Rise Time = 0.1 μs, Pulse Width = 2 μs)
Critical Rate of Rise of Commutation Voltage		dv/dt(c)	Ð	5	Ð	V/μs
(VD = Rated VDRM, ITM = 14 A, Commutating di/dt = 5.0 A/ms,
Gate Unenergized, TC = +70°C)
Critical Rate of Rise of Off-State Voltage		dv/dt	Ð	100	Ð	V/μs
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open,
TC = +70°C)

2	Motorola Thyristor Device Data