Motorola MAC218-10FP, MAC218A6FP, MAC218A10FP, MAC218-8FP, MAC218-6FP Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MAC218FP/D

Triacs

Silicon Bidirectional Thyristors

. . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies.

•Blocking Voltage to 800 Volts

•Glass Passivated Junctions for Greater Parameter Uniformity and Stability

•Isolated TO-220 Type Package for Ease of Mounting

•Gate Triggering in Three Modes (MAC218FP Series) or

Four Modes (MAC218AFP Series)

MT2 MT1

G

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

MAC218FP

Series

MAC218AFP

Series

ISOLATED TRIACs

THYRISTORS

8 AMPERES RMS

200 thru 800 VOLTS

CASE 221C-02

STYLE 3

Rating	Symbol		Value	Unit
Peak Repetitive Off-State Voltage(1) (T = ±40 to +125°C)	V	DRM		Volts
J			200
(1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC218-4FP, MAC218A4FP
MAC218-6FP, MAC218A6FP			400
MAC218-8FP, MAC218A8FP			600
MAC218-10FP, MAC218A10FP			800
On-State RMS Current (T = +80°C) Full Cycle Sine Wave 50 to 60 Hz(2)	I		8	Amps
C	T(RMS)
Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz,	ITSM		100	Amps
preceded and followed by rated current, TC = 80°C)
Circuit Fusing (t = 8.3 ms)		I2t	40	A2s
Peak Gate Power (TC = +80°C, Pulse Width = 2 μs)	PGM		16	Watts
Average Gate Power (TC = +80°C, t = 8.3 ms)	PG(AV)		0.35	Watt
Peak Gate Current (Pulse Width = 1 μs)	IGM		4	Amps
RMS Isolation Voltage (TA = 25°C, Relative Humidity p 20%)	V(ISO)		1500	Volts
Operating Junction Temperature		TJ	±40 to +125	°C
Storage Temperature Range	Tstg		±40 to +150	°C
THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Thermal Resistance, Junction to Case	RθJC	2.2	°C/W
Thermal Resistance, Case to Sink	RθCS	2.2 (typ)	°C/W
Thermal Resistance, Junction to Ambient	RθJA	60	°C/W

1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

2.The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.

Motorola, Inc. 1995

MAC218FP Series MAC218AFP Series

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic	Symbol	Min	Typ	Max	Unit
Peak Off-State Current (Either Direction)	IDRM	Ð	Ð	2	mA
(VD = Rated VDRM @ TJ = 125°C, Gate Open )
Peak On-State Voltage (Either Direction)	VTM	Ð	1.7	2	Volts
(ITM = 11.3 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle t 2%)
Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 12 Ω)	IGT				mA
Trigger Mode
MT2(+), G(+) ;		Ð	Ð	50
MT2(+), G(±)		Ð	Ð	50
MT2(±), G(±)		Ð	Ð	50
MT2(±), G(+) ªAº SUFFIX ONLY		Ð	Ð	75
Gate Trigger Voltage (Continuous dc)	VGT				Volts
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)		Ð	0.9	2
MT2(+), G(±)		Ð	0.9	2
MT2(±), G(±)		Ð	1.1	2
MT2(±), G(+) ªAº SUFFIX ONLY		Ð	1.4	2.5
(Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C)
MT2(+), G(+); MT2(±), G(±); MT2(+), G(±)		0.2	Ð	Ð
MT2(±), G(+) ªAº SUFFIX ONLY		0.2	Ð	Ð
Holding Current (Either Direction)	IH	Ð	Ð	50	mA
(VD = 24 Vdc, Gate Open, Initiating Current = 200 mA)
Critical Rate of Rise of Commutating Off-State Voltage	dv/dt(c)	Ð	5	Ð	V/μs
(VD = Rated VDRM, ITM = 11.3 A, Commutating
di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C)
Critical Rate of Rise of Off-State Voltage	dv/dt	Ð	100	Ð	V/μs
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open,
TJ = 125°C)

TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)

125

115

105

95

85

75

0

															(WATTS)	10
															DISSIPATION	8
															POWER	6
																4
															AVERAGE
																2
															,
															D(AV)	0
1		2		3		4		5		6		7			P	0		1		2		3		4		5		6		7		8
														8
		IT(RMS), RMS ON-STATE CURRENT (AMPS)																		IT(RMS), RMS ON-STATE CURRENT (AMPS)
		Figure 1. Current Derating																		Figure 2. Power Dissipation

2	Motorola Thyristor Device Data