Motorola MAC15SN, MAC15SD, MAC15SM Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MAC15S/D

Advance Information

TRIACS

Silicon Bidirectional Thyristors

Designed for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications.

•Sensitive Gate allows Triggering by Microcontrollers and other Logic Circuits

•High Immunity to dv/dt Ð 25 V/ ms minimum at 110_C

•High Commutating di/dt Ð 8.0 A/ms minimum at 110 _C

•Minimum and Maximum Values of IGT, VGT and IH specified for ease of design

•On-State Current Rating of 15 Amperes RMS at 70_C

•High Surge Current Capability Ð 120 Amperes

•Blocking Voltage to 800 Volts

•Rugged, Economical TO220AB Package

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

MAC15S SERIES

TRIACS

15 AMPERES RMS

400 THRU 800

VOLTS

MT2

MT1

MT2

G

CASE 221A±06 (TO-220AB)

STYLE 4

Parameter		Symbol	Value	Unit
Peak Repetitive Off-State Voltage (1)		VDRM		Volts
(TJ = ±40 to 110°C, Sine Wave, 50 to 60Hz, Gate Open)	MAC15SD		400
	MAC15SM		600
	MAC15SN		800
On-State RMS Current		IT(RMS)	15	A
(Full Cycle Sine Wave, 60Hz, TJ = 70°C)
Peak Non-repetitive Surge Current		ITSM	120	A
(One Half Cycle, 60 Hz, TJ = 110°C)
Circuit Fusing Consideration		I2t	60	A2sec
(t = 8.3 ms)
Peak Gate Power		PGM	20	Watts
(Pulse Width ≤ 1.0 ms, TC = 70°C)
Average Gate Power		PG(AV)	0.5	Watts
(t = 8.3 ms, TC = 70°C)
Operating Junction Temperature Range		TJ	± 40 to +110	°C
Storage Temperature Range		Tstg	± 40 to +150	°C

THERMAL CHARACTERISTICS

Thermal Resistance			°C/W
Ð Junction to Case	RqJC	2.0
Ð Junction to Ambient	RqJA	62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds	TL	260	°C

(1) VDRMforalltypescanbeappliedonacontinuousbasis.Blockingvoltagesshallnotbetestedwithaconstantcurrentsourcesuchthatthevoltage

ratings of the devices are exceeded.

REV 0

Motorola, Inc. 1995

MAC15S		SERIES
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic			Symbol	Min	Typ	Max	Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current	TJ = 25°C		IDRM	Ð	Ð	0.01	mA
(VD = Rated VDRM, Gate Open)
	TJ = 110°C			Ð	Ð	2.0
ON CHARACTERISTICS
Peak On-State Voltage* (ITM = 21A)			VTM	Ð	Ð	1.8	Volts
Continuous Gate Trigger Current (VD = 12 V, RL = 100Ω)			IGT	.8	2.0	5.0	mA
MT2(+), G(+)
MT2(+), G(±)				.8	3.0	5.0
MT2(±), G(±)				.8	3.0	5.0
Hold Current (VD = 12 V, Gate Open, Initiating Current = 150mA)			IH	1.0	3.0	10	mA
Latching Current (VD = 24V, IG = 5mA)			IL	2.0	5.0	15	mA
MT2(+), G(+)
MT2(+), G(±)				2.0	10	20
MT2(±), G(±)				2.0	5.0	15
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100Ω)			VGT	0.45	0.62	1.5	Volts
MT2(+), G(+)
MT2(+), G(±)				0.45	0.60	1.5
MT2(±), G(±)				0.45	0.65	1.5
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off±State Voltage			(dv/dt)c	8.0	10	Ð	A/ms
(VD = 400V, ITM = 3.5A, Commutating dv/dt = 10Vm/sec,
Gate Open, TJ = 110_C, f= 500Hz, Snubber: CS = 0.01 mF, RS =15W,
see figure 15. )
Critical Rate of Rise of Off-State Voltage			dv/dt	25	75	Ð	V/ms
(VD = Rate VDRM, Exponential Waveform, RGK = 510W, TJ = 110_C)
* Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

,MAXIMUM ALLOWABLE CASE TEMPERATURE (C)°	110										, MAXIMUM AVERAGE POWER DISSIPATION(WATTS)	25
	100											20
								a = 30 and 60°
	90											15
					α
	80			α								10
			a = CONDUCTION ANGLE				120°
	70									180°		5
	60									DC		0
		0	2	4	6	8	10	12	14	16
C				IT(RMS), RMS ON±STATE CURRENT (AMPS)							(AV)
T											P

			α				DC
						180°
		α
						120°
	a = CONDUCTION ANGLE				90°
					60°
							a = 30°
0	2	4	6	8	10	12	14	16
		IT(RMS), RMS ON±STATE CURRENT (AMPS)

Figure 1.0 RMS Current Derating

Figure 2.0 Maximum On±State Power Dissipation

Data Sheets

2

Motorola Thyristor Device Data

(AMPS)CURRENTSTATE-ONINSTANTANOUS								MAC15S		SERIES
	100	Typical @ TJ = 25 °C								(NORMALIZED)RESISTANCETHERMAL	1
	10			Maximum @									ZqJC(t) = RqJC(t) r(t)
				TJ = 25 °C
											0.1
	1		Maximum @
			TJ = 110°C							,TRANSIENT
I	0.5	1	1.5	2	2.5	3	3.5	4	4.5		0.1	1	10	100	1000	1@104
,	0.1										0.01
T
		VT, INSTANTANEOUS ON±STATE VOLTAGE (VOLTS)								(t)			t, TIME (ms)
										R

Figure 3.0 On±State Characteristics

Figure 4.0 Transient Thermal Response

	7											9
HOLDING CURRENT (mA)	6										LATCHING CURRENT (mA)	8
	5											7
																	Q1
	4						MT2 NEGATIVE					6
												5
	3															Q3
												4
			MT2 POSITIVE
,											,
H											L
	2
I											I	3
	1	±25	±10	5	20	35	50	65	80	95	110	2	±25	±10	5	20	35	50	65	80	95	110
	±40											±40
				TJ, JUNCTION TEMPERATURE (°C)											TJ, JUNCTION TEMPERATURE (°C)

Figure 5.0 Typical Holding Current Versus	Figure 6.0 Typical Latching Current Versus
Junction Temperature	Junction Temperature

	7											0.9
, GATE TRIGGER CURRENT (mA)	6										GATE TRIGGER VOLTAGE (VOLTS)	0.8
	5											0.7
					Q3														Q3
	4
	3											0.6				Q1
	2		Q2									0.5					Q2
			Q1
GT	1										,	0.4
I											GT
											V
	0	±25	±10	5	20	35	50	65	80	95	110	0.3	±25	±10	5	20	35	50	65	80	95	110
	±40											±40
			TJ, JUNCTION TEMPERATURE (°C)												TJ, JUNCTION TEMPERATURE (°C)

Figure 7.0 Typical Gate Trigger Current Versus	Figure 8.0 Typical Gate Trigger Voltage Versus
Junction Temperature	Junction Temperature

Motorola Thyristor Device Data

3

Data Sheets