Motorola MAC212A8, MAC212A6, MAC212A4, MAC212A10, MAC212-8 Datasheet

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Triacs

Silicon Bidirectional Thyristors

. . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.

Blocking Voltage to 800 Volts

All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability

Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability

Gate Triggering Guaranteed in Three Modes (MAC212 Series) or Four Modes (MAC212A Series)

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

MAC212

Series

MAC212A

Series

TRIACs

12 AMPERES RMS

200 thru 800 VOLTS

MT1

MT2

G

 

CASE 221A-04 (TO-220AB)

STYLE 4

Rating

Symbol

Value

Unit

 

 

 

 

 

Repetitive Peak Off-State Voltage(1) (T = ±40 to +125°C,

V

DRM

 

Volts

J

 

 

 

1/2 Sine Wave 50 to 60 Hz, Gate Open)

 

 

 

 

MAC212-4, MAC212A4

 

 

200

 

MAC212-6, MAC212A6

 

 

400

 

MAC212-8, MAC212A8

 

 

600

 

MAC212-10, MAC212A10

 

 

800

 

 

 

 

 

On-State Current RMS (TC = +85°C)

IT(RMS)

12

Amp

Full Cycle Sine Wave 50 to 60 Hz

 

 

 

 

 

 

 

 

Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +85°C)

ITSM

100

Amp

preceded and followed by Rated Current

 

 

 

 

 

 

 

 

 

Circuit Fusing Considerations (t = 8.3 ms)

 

I2t

40

A2s

Peak Gate Power (TC = +85°C, Pulse Width = 10 μs)

PGM

20

Watts

Average Gate Power (TC = +85°C, t = 8.3 ms)

PG(AV)

0.35

Watt

Peak Gate Current (TC = +85°C, Pulse Width = 10 μs)

IGM

2

Amp

Operating Junction Temperature Range

 

TJ

±40 to +125

°C

Storage Temperature Range

Tstg

±40 to +150

°C

1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Motorola Thyristor Device Data

3±83

Motorola MAC212A8, MAC212A6, MAC212A4, MAC212A10, MAC212-8 Datasheet

MAC212 Series MAC212A Series

THERMAL CHARACTERISTICS

Characteristic

 

Symbol

 

Max

 

 

Unit

 

 

 

 

 

 

 

 

 

 

 

Thermal Resistance, Junction to Case

 

RθJC

 

2.1

 

 

°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

 

 

 

 

 

 

 

 

 

Characteristic

 

Symbol

 

Min

Typ

Max

 

Unit

 

 

 

 

 

 

 

 

 

 

 

Peak Blocking Current (Either Direction)

 

 

IDRM

 

 

 

 

 

 

μA

(VD = Rated VDRM, Gate Open) TJ = 25°C

 

 

 

 

Ð

Ð

10

 

TJ = +125°C

 

 

 

 

Ð

Ð

2

 

mA

Peak On-State Voltage (Either Direction)

 

 

VTM

 

Ð

1.3

1.75

 

Volts

ITM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%

 

 

 

 

 

 

 

 

 

 

Gate Trigger Current (Continuous dc)

 

 

IGT

 

 

 

 

 

 

mA

(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)

 

 

 

 

 

 

 

 

 

 

MT2(+), G(+)

 

 

 

 

Ð

12

50

 

 

MT2(+), G(±)

 

 

 

 

Ð

12

50

 

 

MT2(±), G(±)

 

 

 

 

Ð

20

50

 

 

MT2(±), G(+) ªAº SUFFIX ONLY

 

 

 

 

Ð

35

75

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate Trigger Voltage (Continuous dc)

 

 

VGT

 

 

 

 

 

 

Volts

(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)

 

 

 

 

 

 

 

 

 

 

MT2(+), G(+)

 

 

 

 

Ð

0.9

2

 

 

MT2(+), G(±)

 

 

 

 

Ð

0.9

2

 

 

MT2(±), G(±)

 

 

 

 

Ð

1.1

2

 

 

MT2(±), G(+) ªAº SUFFIX ONLY

 

 

 

 

Ð

1.4

2.5

 

 

(Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C)

 

 

 

 

 

 

 

 

 

 

MT2(+), G(+); MT2(±), G(±); MT2(+), G(±)

 

 

 

 

0.2

Ð

Ð

 

 

MT2(±), G(+) ªAº SUFFIX ONLY

 

 

 

 

0.2

Ð

Ð

 

 

 

 

 

 

 

 

 

 

 

 

Holding Current (Either Direction)

 

 

IH

 

Ð

6

50

 

mA

(Main Terminal Voltage = 12 Vdc, Gate Open,

 

 

 

 

 

 

 

 

 

 

Initiating Current = 500 mA)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Turn-On Time

 

 

tgt

 

Ð

1.5

Ð

 

μs

(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA,

 

 

 

 

 

 

 

 

 

 

Rise Time = 0.1 μs, Pulse Width = 2 μs)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Critical Rate of Rise of Commutation Voltage

 

dv/dt(c)

 

Ð

5

Ð

 

V/μs

(VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms,

 

 

 

 

 

 

 

 

 

 

Gate Unenergized, TC = +85°C)

 

 

 

 

 

 

 

 

 

 

Critical Rate of Rise of Off-State Voltage

 

 

dv/dt

 

Ð

100

Ð

 

V/μs

(VD = Rated VDRM, Exponential Voltage Rise, Gate Open,

 

 

 

 

 

 

 

 

 

 

TC = +85°C)

 

 

 

 

 

 

 

 

 

 

C)

 

FIGURE 1 Ð CURRENT DERATING

 

 

 

°

 

 

 

 

 

 

 

 

 

ALLOWABLE CASE TEMPERATURE (

125

 

 

 

 

 

 

AVERAGEPOWER DISSIPATION (WATT)

28

115

 

 

 

 

 

 

24

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20

105

 

 

 

 

α = 30°

16

 

 

 

 

 

 

 

95

 

 

α

 

 

60°

12

 

 

 

 

°

 

 

 

 

 

 

90

 

 

 

α

 

 

 

180°

8.0

85

α = CONDUCTION ANGLE

 

 

dc

 

MAXIMUM,

 

 

 

 

,

4.0

 

 

 

 

 

 

 

D(AV)

75

 

 

 

 

 

 

0

 

 

 

 

 

 

P

C

0

2.0

4.0

6.0

8.0

10

12

14

 

T

 

 

 

 

IT(RMS), RMS ON-STATE CURRENT (AMP)

 

 

 

FIGURE 2 Ð POWER DISSIPATION

 

 

 

α

 

 

 

 

 

 

α

 

 

 

dc

 

 

α = CONDUCTION ANGLE

 

 

α = 180°

 

 

 

90°

 

 

 

 

 

 

 

 

 

 

 

 

 

 

60°

 

 

 

 

 

 

 

30°

 

0

2.0

4.0

6.0

8.0

10

12

14

 

 

IT(RMS), RMS ON-STATE CURRENT (AMP)

 

 

3±84

Motorola Thyristor Device Data

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