Motorola MAC228-6, MAC228-4, MAC228-10, MAC228A8, MAC228A4 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MAC228/D

Triacs

Silicon Bidirectional Triode Thyristors

. . . designed primarily for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications.

•Sensitive Gate Triggering in 3 Modes for AC Triggering on Sinking Current Sources (MAC228 Series)

•Four Mode Triggering for Drive Circuits that Source Current (MAC228A Series)

•All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability

•Small, Rugged, Thermowatt Construction for Low Thermal resistance and High Heat Dissipation

•Center Gate Geometry for Uniform Current Spreading

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

MAC228

Series

MAC228A

Series

TRIACs

8 AMPERES RMS

200 thru 800 VOLTS

MT2	MT1
	G

CASE 221A-04 (TO-220AB)

STYLE 4

Rating	Symbol	Value	Unit
Peak Repetitive Off-State Voltage(1)	VDRM		Volts
(TJ = ±40 to 110°C
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC228-4, MAC228A4		200
MAC228-6, MAC228A6		400
MAC228-8, MAC228A8		600
MAC228-10, MAC228A10		800
On-State RMS Current (TC = 80°C)	IT(RMS)	8	Amps
Full Cycle Sine Wave 50 to 60 Hz
Peak Non-repetitive Surge Current	ITSM	80	Amps
(One Full Cycle 60 Hz, TJ = 110°C)
Circuit Fusing	I2t	26	A2s
(t = 8.3 ms)
Peak Gate Current (t p 2 μs)	IGM	±2	Amps
Peak Gate Voltage (t p 2 μs)	VGM	±10	Volts
Peak Gate Power (t p 2 μs)	PGM	20	Watts
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current			(continued)
source such that the voltage ratings of the devices are exceeded.

Motorola, Inc. 1995

MAC228 Series MAC228A Series

MAXIMUM RATINGS Ð continued

Rating	Symbol	Value	Unit
Average Gate Power (TC = 80°C, t p 8.3 ms)	PG(AV)	0.5	Watts
Operating Junction Temperature Range	TJ	±40 to 110	°C
Storage Temperature Range	Tstg	±40 to 150	°C
Mounting Torque		8	in. lb.
THERMAL CHARACTERISTICS

	Characteristic			Symbol			Max			Unit
Thermal Resistance, Junction to Case				RθJC		2.2				°C/W
Thermal Resistance, Junction to Ambient				RθJA		60				°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
	Characteristic	Symbol			Min		Typ	Max			Unit
Peak Blocking Current	TJ = 25°C	IDRM			Ð		Ð	10			μA
(VD = Rated VDRM)
	TJ = 110°C				Ð		Ð	2			mA
Peak On-State Voltage		VTM			Ð		Ð	1.8			Volts
(ITM = 11 A Peak, Pulse Width p 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc)		IGT									mA
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(±); MT2(±), G(±)					Ð		Ð	5
MT2(±), G(+) ªAº Suffix Only					Ð		Ð	10
Gate Trigger Voltage (Continuous dc)		VGT									Volts
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(±); MT2(±), G(±)					Ð		Ð	2
MT2(±), G(+) ªAº Suffix Only					Ð		Ð	2.5
(VD = Rated VDRM, TC = 110°C, RL = 10 k)
MT2(+), G(+); MT2(+), G(±); MT2(±), G(±)					0.2		Ð	Ð
MT2(±), G(+) ªAº Suffix Only					0.2		Ð	Ð
Holding Current		IH			Ð		Ð	15			mA
(VD = 12 Vdc, ITM = 200 mA, Gate Open)
Gate-Controlled Turn-On Time		tgt			Ð		1.5	Ð			μs
(VD = Rated VDRM, ITM = 16 A Peak, IG = 30 mA)
Critical Rate of Rise of Off-State Voltage		dv/dt			Ð		25	Ð			V/μs
(VD = Rated VDRM, Exponential Waveform, TC = 110°C)
Critical Rate of Rise of Commutation Voltage		dv/dt(c)			Ð		5	Ð			V/μs
(VD = Rated VDRM, ITM = 11.3 A,
Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C)

FIGURE 1 ± RMS CURRENT DERATING

	110
°C)	104					α = 30°
							60°
(
TEMPERATURE
							90°	120°
	98								180°
	92			α
CASE
			α
,
C	86
T		α = CONDUCTION ANGLE					dc
	80		2.0	3.0	4.0		6.0	7.0	8.0
	0	1.0				5.0
			IT(RMS), RMS ON-STATE CURRENT (AMP)

FIGURE 2 ± ON-STATE POWER DISSIPATION

	10						dc
(WATTS)	8.0		α			α = 180°
						120°
		α
POWER						90°
	6.0	α = CONDUCTION ANGLE 60°
, AVERAGE	4.0	TJ ≈ 110°C		30°
(AV)	2.0
P
	0
	0	1.0	2.0	3.0	4.0	5.0	6.0	7.0	8.0
		IT(RMS), RMS ON-STATE CURRENT (AMP)

2	Motorola Thyristor Device Data