MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.
•Blocking Voltage to 800 Volts
•All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
•Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
•Gate Triggering Guaranteed in Three Modes (MAC15FP Series) or Four Modes (MAC15AFP Series)
MT2 MT1
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
MAC15FP
Series
MAC15AFP
Series
ISOLATED TRIACs
THYRISTORS
15 AMPERES RMS
200 thru 800 VOLTS
CASE 221C-02
STYLE 3
Rating |
Symbol |
Value |
Unit |
|
|
|
|
Repetitive Peak Off-State Voltage(1) (T = ±40 to +125°C, |
V |
|
Volts |
J |
DRM |
|
|
1/2 Sine Wave 50 to 60 Hz, Gate Open) |
|
|
|
MAC15-4FP, MAC15A4FP |
|
200 |
|
MAC15-6FP, MAC15A6FP |
|
400 |
|
MAC15-8FP, MAC15A8FP |
|
600 |
|
MAC15-10FP, MAC15A10FP |
|
800 |
|
|
|
|
|
On-State RMS Current (T = +80°C)(2) |
I |
15 |
Amps |
C |
T(RMS) |
|
|
Full Cycle Sine Wave 50 to 60 Hz (TC = +95°C) |
|
12 |
|
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C) |
ITSM |
150 |
Amps |
preceded and followed by rated current |
|
|
|
|
|
|
|
Peak Gate Power (TC = +80°C, Pulse Width = 2 μs) |
PGM |
20 |
Watts |
Average Gate Power (TC = +80°C, t = 8.3 ms) |
PG(AV) |
0.5 |
Watt |
Peak Gate Current |
IGM |
2 |
Amps |
Peak Gate Voltage |
VGM |
10 |
Volts |
RMS Isolation Voltage (TA = 25°C, Relative Humidity p 20%) |
V(ISO) |
1500 |
Volts |
Operating Junction Temperature |
TJ |
±40 to +125 |
°C |
Storage Temperature Range |
Tstg |
±40 to +150 |
°C |
1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
2.The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.
Motorola Thyristor Device Data |
3±63 |
MAC15FP Series MAC15AFP Series
THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
|
|
|
|
Thermal Resistance, Junction to Case |
RθJC |
2 |
°C/W |
Thermal Resistance, Case to Sink |
RθCS |
2.2 (typ) |
°C/W |
Thermal Resistance, Junction to Ambient |
RθJA |
60 |
°C/W |
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
|
|
|
|
|
|
Peak Blocking Current (Either Direction) TJ = 25°C |
IDRM |
Ð |
Ð |
10 |
μA |
(VD = Rated VDRM, TJ = 125°C, Gate Open) |
|
Ð |
Ð |
2 |
mA |
Peak On-State Voltage (Either Direction) |
VTM |
Ð |
1.3 |
1.6 |
Volts |
(ITM = 21 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%) |
|
|
|
|
|
Gate Trigger Current (Continuous dc) |
IGT |
|
|
|
mA |
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) |
|
|
|
|
|
MT2(+), G(+) |
|
Ð |
Ð |
50 |
|
MT2(+), G(±) |
|
Ð |
Ð |
50 |
|
MT2(±), G(±) |
|
Ð |
Ð |
50 |
|
MT2(±), G(+) ªAº SUFFIX ONLY |
|
Ð |
Ð |
75 |
|
|
|
|
|
|
|
Gate Trigger Voltage (Continuous dc) |
VGT |
|
|
|
Volts |
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) |
|
|
|
|
|
MT2(+), G(+) |
|
Ð |
0.9 |
2 |
|
MT2(+), G(±) |
|
Ð |
0.9 |
2 |
|
MT2(±), G(±) |
|
Ð |
1.1 |
2 |
|
MT2(±), G(+) ªAº SUFFIX ONLY |
|
Ð |
1.4 |
2.5 |
|
(Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +110°C) |
|
|
|
|
|
MT2(+), G(+); MT2(±), G(±); MT2(+), G(±) |
|
0.2 |
Ð |
Ð |
|
MT2(±), G(+) ªAº SUFFIX ONLY |
|
0.2 |
Ð |
Ð |
|
|
|
|
|
|
|
Holding Current (Either Direction) |
IH |
Ð |
6 |
40 |
mA |
(Main Terminal Voltage = 12 Vdc, Gate Open, |
|
|
|
|
|
Initiating Current = 200 mA) |
|
|
|
|
|
|
|
|
|
|
|
Turn-On Time |
tgt |
Ð |
1.5 |
Ð |
μs |
(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA, |
|
|
|
|
|
Rise Time = 0.1 μs, Pulse Width = 2 μs) |
|
|
|
|
|
|
|
|
|
|
|
Critical Rate of Rise of Commutation Voltage |
dv/dt(c) |
Ð |
5 |
Ð |
V/μs |
(VD = Rated VDRM, ITM = 21 A, Commutating di/dt = 7.6 A/ms, |
|
|
|
|
|
Gate Unenergized, TC = 80°C) |
|
|
|
|
|
QUADRANT DEFINITIONS
|
|
MT2(+) |
||
QUADRANT II |
|
QUADRANT I |
||
MT2(+), G(±) |
|
MT2(+), G(+) |
||
G(±) |
|
|
|
G(+) |
|
|
|
||
QUADRANT III |
|
QUADRANT IV |
||
|
MT2(±), G(±) |
|
MT2(±), G(+) |
|
|
|
|
|
|
|
|
MT2(±) |
Trigger devices are recommended for gating on Triacs. They provide:
1.Consistent predictable turn-on points.
2.Simplified circuitry.
3.Fast turn-on time for cooler, more efficient and reliable operation.
ELECTRICAL CHARACTERISTICS of RECOMMENDED
BIDIRECTIONAL SWITCHES
Usage |
General |
||
|
|
|
|
Part Number |
MBS4991 |
MBS4992 |
|
|
|
|
|
VS |
6±10 V |
7.5±9 V |
|
IS |
350 μA Max |
120 μA Max |
|
VS1±VS2 |
0.5 V Max |
0.2 V Max |
|
Temperature |
0.02%/°C Typ |
||
Coefficient |
|||
|
|
||
|
|
|
1.Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage.
3±64 |
Motorola Thyristor Device Data |