Motorola MAC8N, MAC8M, MAC8D Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

TRIACS

Silicon Bidirectional Thyristors

Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.

•Blocking Voltage to 800 Volts

•On-State Current Rating of 8.0 Amperes RMS at 100°C

•Uniform Gate Trigger Currents in Three Modes

•High Immunity to dv/dt Ð 250 V/ μs minimum at 125°C

•Minimizes Snubber Networks for Protection

•Industry Standard TO-220AB Package

•High Commutating di/dt Ð 6.5 A/ms minimum at 125 °C

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

MAC8

SERIES*

*Motorola preferred devices

TRIACS

8 AMPERES RMS

400 thru 800 VOLTS

MT2

MT1

MT2 G

CASE 221A-06 (TO-220AB)

Style 4

Symbol	Parameter		Value	Unit
VDRM	Peak Repetitive Off-State Voltage (1)			Volts
	(± 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)	MAC8D	400
		MAC8M	600
		MAC8N	800
IT(RMS)	On-State RMS Current		8.0	A
	(60 Hz, TC = 100°C)
ITSM	Peak Non-repetitive Surge Current		80	A
	(One Full Cycle, 60 Hz, TJ = 125°C)
I2t	Circuit Fusing Consideration (t = 8.3 ms)		26	A2sec
PGM	Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C)		16	Watts
PG(AV)	Average Gate Power (t = 8.3 ms, TC = 80°C)		0.35	Watts
TJ	Operating Junction Temperature Range		± 40 to +125	°C
Tstg	Storage Temperature Range		± 40 to +150	°C
THERMAL CHARACTERISTICS
RqJC	Thermal Resistance Ð Junction to Case		2.2	°C/W
RqJA	Thermal Resistance Ð Junction to Ambient		62.5
TL	Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds		260	°C

(1)VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Thyristor Device Data

3±45

MAC8	SERIES
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol		Characteristic		Min	Typ	Max	Unit
OFF CHARACTERISTICS
IDRM		Peak Repetitive Blocking Current	TJ = 25°C	Ð	Ð	0.01	mA
		(VD = Rated VDRM, Gate Open)
			TJ = 125°C	Ð	Ð	2.0
ON CHARACTERISTICS
VTM		Peak On-State Voltage*					Volts
		(ITM = ± 11 A Peak)		Ð	1.2	1.6
IGT		Continuous Gate Trigger Current (VD = 12 V, RL = 100 Ω)		5.0	13	35	mA
		MT2(+), G(+)
		MT2(+), G(±)		5.0	16	35
		MT2(±), G(±)		5.0	18	35
IH		Hold Current					mA
		(VD = 12 V, Gate Open, Initiating Current = ±150 mA)		Ð	20	40
IL		Latch Current (VD = 24 V, IG = 35 mA)		Ð	20	50	mA
		MT2(+), G(+); MT2(±), G(±)
		MT2(+), G(±)		Ð	30	80
VGT		Gate Trigger Voltage (VD = 12 V, RL = 100 Ω)		0.5	0.69	1.5	Volts
		MT2(+), G(+)
		MT2(+), G(±)		0.5	0.77	1.5
		MT2(±), G(±)		0.5	0.72	1.5
DYNAMIC CHARACTERISTICS
(di/dt)c		Rate of Change of Commutating Current* See Figure 10.		6.5	Ð	Ð	A/ms
		(VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/μs,	CL = 10 μF
		Gate Open, TJ = 125°C, f = 250 Hz, No Snubber)	LL = 40 mH
dv/dt		Critical Rate of Rise of Off-State Voltage		250	Ð	Ð	V/μs
		(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

C)(°	125
	120
TEMPERATURE										α =	120, 90,		60, 30°
	115
									α = 180°
CASE	110
										DC
,
C	105
T
	100
			1		2		3		4	5		6		7		8
	0

IT(RMS), RMS ON-STATE CURRENT (AMP)

Figure 1. RMS Current Derating

PAV, AVERAGE POWER (WATTS)

12
																DC
10
										180°
8
										120°
6
																60°
4
														90°
2										α = 30°
0
		1		2		3		4		5		6		7		8
0

IT(RMS), ON-STATE CURRENT (AMP)

Figure 2. On-State Power Dissipation

3±46	Motorola Thyristor Device Data