Motorola MAC15A4, MAC15-8, MAC15-6, MAC15-4, MAC15-10 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Triacs

Silicon Bidirectional Triode Thyristors

. . . designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.

•Blocking Voltage to 800 Volts

•All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability

•Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability

•Gate Triggering Guaranteed in Three Modes (MAC15 Series) or Four Modes (MAC15A Series)

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

MAC15

Series

MAC15A

Series

TRIACs

15 AMPERES RMS

200 thru 800 VOLTS

MT2 MT1

G

CASE 221A-04 (TO-220AB)

STYLE 4

Rating		Symbol	Value	Unit
Peak Repetitive Off-State Voltage(1)		VDRM		Volts
(Gate Open, TJ = ±40 to +125°C)	MAC15-4, MAC15A4		200
	MAC15-6, MAC15A6		400
	MAC15-8, MAC15A8		600
	MAC15-10, MAC15A10		800
Peak Gate Voltage		VGM	10	Volts
On-State Current RMS		IT(RMS)	15	Amps
Full Cycle Sine Wave 50 to 60 Hz (TC = +90°C)
Circuit Fusing (t = 8.3 ms)		I2t	93	A2s
Peak Surge Current		ITSM	150	Amps
(One Full Cycle, 60 Hz, TC = +80°C)
Preceded and followed by rated current
Peak Gate Power (TC = +80°C, Pulse Width = 2 μs)		PGM	20	Watts
Average Gate Power (TC = +80°C, t = 8.3 ms)		PG(AV)	0.5	Watt
Peak Gate Current		IGM	2	Amps
Operating Junction Temperature Range		TJ	±40 to +125	°C
Storage Temperature Range		Tstg	±40 to +150	°C
THERMAL CHARACTERISTICS
Characteristic		Symbol	Max	Unit
Thermal Resistance, Junction to Case		RθJC	2	°C/W

1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

REV 1

Motorola Thyristor Device Data

3±59

MAC15 Series MAC15A	Series
ELECTRICAL CHARACTERISTICS (TC = 25°C, and either polarity of MT2 to MT1 Voltage, unless otherwise noted.)
Characteristic		Symbol	Min	Typ		Max	Unit
Peak Blocking Current	TJ = 25°C	IDRM	Ð	Ð		10	μA
(VD = Rated VDRM, Gate Open)
	TJ = 125°C		Ð	Ð		2	mA
Peak On-State Voltage		VTM	Ð	1.3		1.6	Volts
(ITM = 21 A Peak; Pulse Width = 1 or 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc)		IGT					mA
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)			Ð	Ð		50
MT2(+), G(±)			Ð	Ð		50
MT2(±), G(±)			Ð	Ð		50
MT2(±), G(+) ªAº SUFFIX ONLY			Ð	Ð		75
Gate Trigger Voltage (Continuous dc)		VGT					Volts
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)			Ð	0.9		2
MT2(+), G(±)			Ð	0.9		2
MT2(±), G(±)			Ð	1.1		2
MT2(±), G(+) ªAº SUFFIX ONLY			Ð	1.4		2.5
(VD = Rated VDRM, RL = 10 k Ohms, TJ = 110°C)
MT2(+), G(+); MT2(±), G(±); MT2(+), G(±)			0.2	Ð		Ð
MT2(±), G(+) ªAº SUFFIX ONLY			0.2	Ð		Ð
Holding Current (Either Direction)		IH	Ð	6		40	mA
(VD = 12 Vdc, Gate Open)
(IT = 200 mA)
Turn-On Time		tgt	Ð	1.5		Ð	μs
(VD = Rated VDRM, ITM = 17 A)
(IGT = 120 mA, Rise Time = 0.1 μs, Pulse Width = 2 μs)
Critical Rate of Rise of Commutation Voltage		dv/dt(c)	Ð	5		Ð	V/μs
(VD = Rated VDRM, ITM = 21 A, Commutating di/dt = 7.6 A/ms,
Gate Unenergized, TC = 80°C)

FIGURE 1 ± RMS CURRENT DERATING

	130
°C)	120						α = 30°
							α = 60°
(
TEMPERATURE
	110						α = 90°
	100			α = 180°
, CASE						dc
				α
C	90
T		α					TJ ≈ 125°
	80	α = CONDUCTION ANGLE
	0	2	4	6	8	10	12	14	16
			IT(RMS), RMS ON-STATE CURRENT (AMP)

FIGURE 2 ± ON-STATE POWER DISSIPATION

	20						α = 180°
(WATTS)	16	TJ	≈ 125°C						120°
							dc		90°
			α
POWER	12								60°
		α							30°
, AVERAGE
	8	α = CONDUCTION ANGLE
	4
AV
P
	0
	0	2	4	6	8	10	12	14	16
			IT(RMS), ON-STATE CURRENT (AMP)

3±60	Motorola Thyristor Device Data