Motorola MAC6075A, MAC6073B, MAC6071B, MAC6071A, MAC6075B Datasheet

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Motorola MAC6075A, MAC6073B, MAC6071B, MAC6071A, MAC6075B Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MAC6071/D

Advance Information

Sensitive Gate Triacs

Silicon Bidirectional Thyristors

. . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.

Sensitive Gate Triggering (A and B versions) Uniquely Compatible for Direct Coupling to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit Logic Functions

Gate Triggering 4 Mode Ð MAC6071A,B, MAC6073A,B, MAC6075A,B

Blocking Voltages to 600 Volts

All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability

Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability

MAC6071A,B* MAC6073A,B* MAC6075A,B*

*Motorola preferred devices

TRIACs

4 AMPERES RMS

200 thru 600 VOLTS

MT1

MT2

G

 

 

MT2

 

 

 

 

G

CASE 77-08

 

 

 

 

(TO-225AA)

 

 

 

 

MT2 MT1

 

 

 

 

 

STYLE 5

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rating

Symbol

Value

 

Unit

 

 

 

 

 

 

 

Peak Repetitive Off-State Voltage(1)

 

VDRM

 

 

Volts

(Gate Open, TJ = 25 to 110°C)

MAC6071A,B

 

 

200

 

 

 

MAC6073A,B

 

 

400

 

 

 

MAC6075A,B

 

 

600

 

 

 

 

 

 

 

 

 

On-State Current RMS (TC = 85°C)

 

IT(RMS)

4

 

Amps

Peak Surge Current (One Full cycle, 60 Hz, TJ = ±40 to +110°C)

ITSM

30

 

Amps

Circuit Fusing Considerations (t = 8.3 ms)

I2t

3.7

 

A2s

Peak Gate Power

 

PGM

10

 

Watts

Average Gate Power

 

PG(AV)

0.5

 

Watt

Peak Gate Voltage

 

VGM

5

 

Volts

Operating Junction Temperature Range

TJ

±40 to +110

 

°C

Storage Temperature Range

 

Tstg

±40 to +150

 

°C

Mounting Torque (6-32 Screw)(2)

 

Ð

 

8

 

in. lb.

1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

2.Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower

case-to-sink thermal resistance. Main terminal 2 and heatsink contact pad are common.

For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C, for 10 seconds. Consult factory for lead bending options.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1996

MAC6071A,B

MAC6073A,B MAC6075A,B

 

 

 

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

 

 

Symbol

 

Max

 

 

Unit

 

 

 

 

 

 

 

 

 

 

 

Thermal Resistance, Junction to Case

 

 

RθJC

3.5

 

 

°C/W

Thermal Resistance, Junction to Ambient

 

 

RθJA

75

 

 

°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

Symbol

 

Min

 

Typ

Max

 

Unit

 

 

 

 

 

 

 

 

 

 

 

Peak Blocking Current

(TJ = 25°C)

IDRM

 

Ð

 

Ð

10

 

μA

(VD = Rated VDRM, gate open)

 

 

 

 

 

 

 

(TJ = 110°C)

 

 

 

Ð

 

Ð

2.0

 

mA

On-State Voltage (Either Direction)

 

VTM

 

Ð

 

1.3

2.0

 

Volts

(ITM = 6 A Peak)

 

 

 

 

 

 

 

 

 

 

 

 

Peak Gate Trigger Voltage (Continuous dc)

VGT

 

 

 

 

 

 

 

Volts

(TJ = ±40°C) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)

 

 

 

 

 

 

 

 

 

 

MT2(+), G(+); MT2(±), G(±)

 

 

 

 

0.5

 

0.8

1.9

 

 

MT2(+), G(±); MT2(±), G(+)

 

 

 

 

0.5

 

0.8

1.9

 

 

(TJ = 110°C)

 

 

 

 

 

 

 

 

 

 

 

 

MT2(+), G(+); MT2(±), G(±)

 

 

 

 

0.2

 

0.4

0.9

 

 

MT2(+), G(±); MT2(±), G(+)

 

 

 

 

0.2

 

0.4

0.9

 

 

(TJ = 25°C)

 

 

 

 

 

 

 

 

 

 

 

 

MT2(+), G(+); MT2(±), G(±)

 

 

 

 

0.4

 

0.7

1.4

 

 

MT2(+), G(±); MT2(±), G(+)

 

 

 

 

0.4

 

0.7

1.4

 

 

 

 

 

 

 

 

 

 

 

 

 

Holding Current (Either Direction)

 

IH

 

 

 

 

 

 

 

mA

(TJ = ±40°C) (Main Terminal Voltage = 12 Vdc, Gate Open)

 

 

 

 

 

 

 

 

 

 

(Initiating Current = 150 mA)

 

 

 

 

0.4

 

2.0

10

 

 

(TJ = 25°C)

 

 

 

 

 

0.2

 

1.0

5.0

 

 

Latching Current

(VD = 6 V)

TJ = 25°C

IL

 

Ð

 

2.0

10

 

mA

MT2(+), G(+)

(IG = 8 mA)

 

 

 

 

 

 

MT2(+), G(±)

(IG = 8 mA)

 

 

 

 

Ð

 

5.0

20

 

 

MT2(±), G(±)

(IG = 8 mA)

 

 

 

 

Ð

 

1.0

10

 

 

MT2(±), G(+)

(IG = 15 mA)

 

 

 

 

Ð

 

2.0

10

 

 

Gate Trigger Current (Continuous dc)

 

IGT

 

 

 

 

 

 

 

mA

(VD = 12 Vdc, RL = 100 Ohms)

 

 

 

 

 

 

 

 

 

 

 

MAC6071A, MAC6073A, MAC6075A

 

 

 

 

 

 

 

 

 

 

MT2(+), G(+)

 

TJ = 25°C

 

 

 

0.4

 

2.0

5.0

 

 

MT2(+), G(±)

 

 

 

 

 

0.4

 

3.0

5.0

 

 

MT2(±), G(±)

 

 

 

 

 

0.4

 

3.0

5.0

 

 

MT2(±), G(+)

 

 

 

 

 

0.8

 

4.5

10

 

 

MT2(+), G(+)

 

TJ = ±40°C

 

 

 

0.8

 

3.5

10

 

 

MT2(+), G(±)

 

 

 

 

 

0.8

 

4.5

10

 

 

MT2(±), G(±)

 

 

 

 

 

0.8

 

5.0

10

 

 

MT2(±), G(+)

 

 

 

 

 

1.6

 

10

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

Motorola Thyristor Device Data

 

 

MAC6071A,B

MAC6073A,B

MAC6075A,B

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

 

 

 

 

 

 

 

 

Characteristic

 

Symbol

Min

Typ

 

Max

Unit

 

 

 

 

 

 

 

 

 

 

 

Gate Trigger Current (Continuous dc)

 

 

IGT

 

 

 

 

mA

 

(VD = 12 Vdc, RL = 100 Ohms)

 

 

 

 

 

 

 

 

 

MAC6071B, MAC6073B, MAC6075B

 

 

 

 

 

 

 

 

MT2(+), G(+)

TJ = 25°C

 

 

0.4

1.5

 

3.0

 

 

MT2(+), G(±)

 

 

 

0.4

2.5

 

3.0

 

 

MT2(±), G(±)

 

 

 

0.4

2.5

 

3.0

 

 

MT2(±), G(+)

 

 

 

0.8

3.5

 

5.0

 

 

MT2(+), G(+)

TJ = ±40°C

 

 

0.8

3.0

 

8.0

 

 

MT2(+), G(±)

 

 

 

0.8

4.0

 

8.0

 

 

MT2(±), G(±)

 

 

 

0.8

4.5

 

8.0

 

 

MT2(±), G(+)

 

 

 

1.6

7.5

 

15

 

 

 

 

 

 

 

 

 

 

 

 

Turn-On Time (Either Direction)

 

 

tgt

Ð

1.5

 

Ð

μs

 

(ITM = 14 Adc, IGT = 100 mAdc)

 

 

 

 

 

 

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

 

Symbol

Min

Typ

 

Max

Unit

 

 

 

 

 

 

 

 

 

 

Critical Rate of Rise of Off±State Voltage

 

(di/dt)c

 

 

 

 

A/ms

 

(VD = 200 V, ITM = 1.4 A, Commutating dv/dt = 0.5 Vm/sec,

 

 

Ð

2.2

 

Ð

 

 

Gate Open, TJ = 110°C, f = 250 Hz, Snubber: CS = 0.1 mF, RS = 56 W,

 

 

 

 

 

 

 

 

see Figure 16)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Critical Rate of Rise of Off±State Voltage

 

dv/dt

Ð

7.0

 

Ð

V/ms

 

(VD = Rate VDRM, Exponential Waveform, RGK = OPEN, TJ = 110°C)

 

 

 

 

 

 

 

 

SAMPLE APPLICATION:

TTL-SENSITIVE GATE 4 AMPERE TRIAC

TRIGGERS IN MODES II AND III

0 V

14

 

 

MC7400

 

 

 

 

LOAD

 

4

 

 

510

2N6071A

 

7

115 VAC

±VEE

Ω

 

VEE = 5.0 V

 

60 Hz

 

+

 

 

QUADRANT DEFINITIONS

 

 

MT2(+)

 

QUADRANT II

 

QUADRANT I

 

 

MT2(+), G(±)

 

MT2(+), G(+)

G(±)

 

 

 

G(+)

 

 

 

QUADRANT III

 

QUADRANT IV

 

MT2(±), G(±)

 

MT2(±), G(+)

 

 

 

 

 

 

 

MT2(±)

NOTES: For detail Digital Interfacing and Silicon Bilateral Switch (SBS) trigger application information, see the Motorola's Thyristor Data Book (DL137/D, Revision 6).

1.Interfacing Digital Circuits to Thyristor Controlled AC Loads, page 1.6±25.

2.Silicon Bilateral Switch (SBS) Applications, page 1.6±41.

Motorola Thyristor Device Data

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