Motorola MAC224A8, MAC224A4, MAC224A10, MAC224-8, MAC224-6 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MAC224/D

Triacs

Silicon Bidirectional 40 Amperes RMS

Triode Thyristors

. . . designed primarily for full-wave ac control applications such as lighting systems, heater controls, motor controls and power supplies.

•Blocking Voltage to 800 Volts

•All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability

•Gate Triggering Guaranteed in Three Modes (MAC224 Series) or Four Modes (MAC224A Series)

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

MAC224

Series

MAC224A

Series

TRIACs

40 AMPERES RMS

200 thru 800 VOLTS

MT2	G	MT1

CASE 221A-04 (TO-220AB)

STYLE 4

Rating	Symbol		Value		Unit
Peak Repetitive Off-State Voltage(1)		VDRM			Volts
(TJ = ±40 to 125°C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC224-4, MAC224A4			200
MAC224-6, MAC224A6			400
MAC224-8, MAC224A8			600
MAC224-10, MAC224A10			800
On-State RMS Current (T = 75°C)(2)	I	T(RMS)	40		Amps
C
(Full Cycle Sine Wave 50 to 60 Hz)
Peak Non-repetitive Surge Current		ITSM	350		Amps
(One Full Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing (t = 8.3 ms)		I2t	500		A2s
Peak Gate Current (t p 2 μs)		IGM	±2		Amps
Peak Gate Voltage (t p 2 μs)		VGM	±10		Volts
Peak Gate Power (t p 2 μs)		PGM	20		Watts
Average Gate Power (TC = 75°C, t p 8.3 ms)	PG(AV)		0.5		Watts
Operating Junction Temperature Range		TJ	±40 to 125		°C
Storage Temperature Range		Tstg	±40 to 150		°C
Mounting Torque		Ð	8		in. lb.
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source					(cont.)
such that the voltage ratings of the devices are exceeded.

2.This device is rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when the device is to be used at high sustained currents. (See Figure 1 for maximum case temperatures.)

Motorola, Inc. 1995

MAC224 Series MAC224A Series

THERMAL CHARACTERISTICS

Characteristic			Symbol			Max			Unit
Thermal Resistance, Junction to Case			RθJC		1				°C/W
Thermal Resistance, Junction to Ambient			RθJA		60				°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Characteristic	Symbol			Min		Typ	Max			Unit
Peak Blocking Current	IDRM									μA
(Rated VDRM, Gate Open) TJ = 25°C				Ð		Ð	10
TJ = 125°C				Ð		Ð	2			mA
Peak On-State Voltage	VTM			Ð		1.4	1.85			Volts
(ITM = 56 A Peak, Pulse Width p 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc)	IGT									mA
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(±); MT2(+), G(±)				Ð		25	50
MT2(±), G(+) ªAº SUFFIX ONLY				Ð		40	75
Gate Trigger Voltage (Continuous dc)	VGT									Volts
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(±), G(±); MT(+), G(±)				Ð		1.1	2
MT2(±), G(+) ªAº SUFFIX ONLY				Ð		1.3	2.5
Gate Non-Trigger Voltage	VGD									Volts
(VD = Rated VDRM, TJ = 125°C, RL = 10 k)
MT2(+), G(+); MT2(±), G(±); MT(+), G(±)				0.2		Ð	Ð
MT2(±), G(+)				0.2		Ð	Ð
Holding Current (VD = 12 Vdc, Gate Open)	IH			Ð		30	75			mA
Gate Controlled Turn-On Time	tgt			Ð		1.5	Ð			μs
(VD = Rated VDRM, ITM = 56 A Peak, IG = 200 mA)
Critical Rate of Rise of Off-State Voltage	dv/dt			Ð		50	Ð			V/μs
(VD = Rated VDRM, Exponential Waveform, TC = 125°C)
Critical Rate of Rise of Commutation Voltage	dv/dt(c)			Ð		5	Ð			V/μs
(VD = Rated VDRM, ITM = 56 A Peak, Commutating
di/dt = 20.2 A/ms, Gate Unenergized, TC = 75°C)

C

T , MAXIMUM ALLOWABLE CASE TEMPERATURE (°C)

125

120

115

110

105

100

95

90

85

80

75

0

FIGURE 1 ± RMS CURRENT DERATING																		FIGURE 2 ± ON-STATE POWER DISSIPATION
															(WATTS)	60
																54
															DISSIPATION	48
																42
																36
															POWER	30
																24
															AVERAGE,	18
																6.0
															D	12
																0
															P
		10		15
5.0						20		25		30		35		40		0		5.0		10		15		20		25		30		35		40
		IT(RMS), RMS ON-STATE CURRENT (AMPS)*																		IT(RMS), RMS ON-STATE CURRENT (AMPS)*

*This device is rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when the device is to be used at high sustained currents.

2	Motorola Thyristor Device Data