Motorola MAC223A8, MAC223A6, MAC223A4, MAC223A10, MAC223-6 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MAC223/D

Triacs

Silicon Bidirectional Triode Thyristors

. . . designed primarily for full-wave ac control applications such as lighting sysjtems, heater controls, motor controls and power supplies; or wherever full-wave silicon- gate-controlled devices are needed.

•Off-State Voltages to 800 Volts

•All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability

•Small, Rugged, Thermowatt Construction for Thermal Resistance and High Heat Dissipation

•Gate Triggering Guaranteed in Three Modes (MAC223 Series) or Four Modes (MAC223A Series)

MAXIMUM RATINGS (TJ = 25° unless otherwise noted.)

MAC223

Series

MAC223A

Series

TRIACs

25 AMPERES RMS

200 thru 800 VOLTS

MT2	MT1
	G

CASE 221A-04 (TO-220AB)

STYLE 4

Rating	Symbol	Value	Unit
Peak Repetitive Off-State Voltage	VDRM		Volts
(T = ±40 to 125°C)(1)
J
(1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC223-4, MAC223A4		200
MAC223-6, MAC223A6		400
MAC223-8, MAC223A8		600
MAC223-10, MAC223A10		800
On-State RMS Current (TC = 80°C)	IT(RMS)	25	Amps
(Full Cycle Sine Wave 50 to 60 Hz)
Peak Non-repetitive Surge Current	ITSM	250	Amps
(One Full Cycle, 60 Hz, TC = 80°C, preceded and followed by rated current)
Circuit Fusing	I2t	260	A2s
(t = 8.3 ms)
Peak Gate Current (t p 2 μs)	IGM	2	Amps
Peak Gate Voltage (t p 2 μs)	VGM	±10	Volts
Peak Gate Power (t p 2 μs)	PGM	20	Watts
Average Gate Power (TC = 80°C, t p 8.3 ms)	PG(AV)	0.5	Watts
Operating Junction Temperature Range	TJ	±40 to 125	°C
Storage Temperature Range	Tstg	±40 to 150	°C
Mounting Torque	Ð	8	in. lb.

1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Motorola, Inc. 1995

MAC223 Series MAC223A Series

THERMAL CHARACTERISTICS

Characteristic			Symbol			Max			Unit
Thermal Resistance, Junction to Case			RθJC		1.2				°C/W
Thermal Resistance, Junction to Ambient			RθJA		60				°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Characteristic	Symbol			Min		Typ	Max			Unit
Peak Blocking Current(1)	IDRM									μA
(VD = Rated VDRM) TJ = 25°C				Ð		Ð	10
TJ = 125°C				Ð		Ð	2			mA
Peak On-State Voltage	VTM			Ð		1.4	1.85			Volts
(ITM = 35 A Peak, Pulse Width p 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc)	IGT									mA
(VD = 12 V, RL = 100 Ω)
MT2(+ ), G( + ); MT2( ± ), G( ± ); MT(+ ), G( ± )				Ð		20	50
MT2(± ), G( + ) ªAº SUFFIX ONLY				Ð		30	75
Gate Trigger Voltage (Continuous dc)	VGT									Volts
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(±), G(±); MT(+), G(±)				Ð		1.1	2
MT2(±), G(+) ªAº SUFFIX ONLY				Ð		1.3	2.5
(VD = Rated VDRM, TJ = 125°C, RL = 10 k)				0.2		0.4	Ð
MT(+), G(+); MT2(±), G(±); MT2(+), G(±)
MT2(±), G(+) ªAº SUFFIX ONLY				0.2		0.4	Ð
Holding Current	IH			Ð		10	50			mA
(VD = 12 V, ITM = 200 mA, Gate Open)
Gate Controlled Turn-On Time	tgt			Ð		1.5	Ð			μs
(VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA)
Critical Rate of Rise of Off-State Voltage	dv/dt			Ð		40	Ð			V/μs
(VD = Rated VDRM, Exponential Waveform, TC = 125°C)
Critical Rate of Rise of Commutation Voltage	dv/dt(c)			Ð		5	Ð			V/μs
(VD = Rated VDRM, ITM = 35 A Peak, Commutating
di/dt = 12.6 A/ms, Gate Unenergized, TC = 80°C)

1.Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage applied exceeds the rated blocking voltage.

TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (°C)

		FIGURE 1 ± RMS CURRENT DERATING														FIGURE 2 ± ON-STATE POWER DISSIPATION
125													(WATTS)	40
115
													DISSIPATION	30
105
													POWER
														20
95
85													AVERAGE,	10
75
													D
													P	0
0		5.0		10		15		20		25				0		5.0			10		15		20			25
			IT(RMS), RMS ON-STATE CURRENT (AMPS)														IT(RMS), RMS ON-STATE CURRENT (AMPS)

2	Motorola Thyristor Device Data