Motorola MAC97-4, MAC97A8, MAC97A6, MAC97A4, MAC97-8 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MAC97/D

Silicon Bidirectional

Triode Thyristors

. . . designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO±92 package which is readily adaptable for use in automatic insertion equipment.

•One±Piece, Injection±Molded Unibloc Package

•Sensitive Gate Triggering in Four Trigger Modes for all possible Combinations of Trigger Sources, and Especially for Circuits that Source Gate Drives

•All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating	Symbol	Value	Unit
Peak Repetitive Off-State Voltage	VDRM		Volts
(Gate Open, T = ±40 to +110°C)(1)
J
1/2 Sine Wave 50 to 60 Hz, Gate Open
MAC97±4, MAC97A4		200
MAC97±6, MAC97A6		400
MAC97±8, MAC97A8		600
On-State RMS Current	IT(RMS)	0.8	Amp
Full Cycle Sine Wave 50 to 60 Hz (TC = +50°C)
Peak Non±repetitive Surge Current	ITSM	8.0	Amps
(One Full Cycle, 60 Hz, TA = 110°C)
Circuit Fusing Considerations	I2t	0.26	A2s
TJ = ±40 to +110°C (t = 8.3 ms)
Peak Gate Voltage (t v 2.0 ms)	VGM	5.0	Volts
Peak Gate Power (t v 2.0 ms)	PGM	5.0	Watts
Average Gate Power (TC = 80°C, t v 8.3 ms)	PG(AV)	0.1	Watt
Peak Gate Current (t v 2.0 ms)	IGM	1.0	Amp
Operating Junction Temperature Range	TJ	±40 to +110	°C
Storage Temperature Range	Tstg	±40 to +150	°C
THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Thermal Resistance, Junction to Case	RθJC	75	°C/W
Thermal Resistance, Junction to Ambient	RθJA	200	°C/W

(1)VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

MAC97,A IMPROVED SERIES

(Device Date Code

9625 and Up)

Motorola preferred devices

TRIACs

0.8 AMPERE RMS

200 Ð 600 VOLTS

MT1

MT2

G

MT1

G

MT2

CASE 29±04

TO±226AA, STYLE 12 (TO±92)

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola, Inc. 1996

MAC97,A	IMPROVED SERIES
ELECTRICAL CHARACTERISTICS (TC = 25°C, and Either Polarity of MT2 to MT1 Voltage unless otherwise noted)
	Characteristic	Symbol	Min	Typ		Max	Unit
Peak Blocking Current(1)		IRRM	Ð	Ð		0.1	mA
(VD = Rated VDRM, TJ = 110°C, Gate Open)
Peak On-State Voltage (Either Direction)		VTM	Ð	Ð		1.65	Volts
(ITM = 1.1 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%)
Gate Trigger Current (Continuous dc)		IGT					mA
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)			Ð	Ð		10
MT2(+), G(±)			Ð	Ð		10
MT2(±), G(±)			Ð	Ð		10
MT2(±), G(+)	MAC97		Ð	Ð		10
MT2(+), G(+)			Ð	Ð		5.0
MT2(+), G(±)			Ð	Ð		5.0
MT2(±), G(±)			Ð	Ð		5.0
MT2(±), G(+)	MAC97A		Ð	Ð		7.0
Gate Trigger Voltage, (Continuous dc)		VGT					Volts
(VD = 12 Vdc, RL = 100 Ohms)			Ð	Ð		2.0
MT2(+), G(+) All Types
MT2(+), G(±) All Types			Ð	Ð		2.0
MT2(±), G(±) All Types			Ð	Ð		2.0
MT2(±), G(+) All Types			Ð	Ð		2.5
(VD = Rated VDRM, RL = 10 k Ohms, TJ = 110°C)
MT2(+), G(+); MT2(±), G(±); MT2(+), G(±) All Types			0.1	Ð		Ð
MT2(±), G(+) All Types			0.1	Ð		Ð
Holding Current		IH	Ð	Ð		5.0	mA
(VD = 12 Vdc, ITM = 200 mA, Gate Open)
Gate Controlled Turn±On Time		tgt	Ð	2.0		Ð	ms
(VD = Rated VDRM, ITM = 1.0 A pk, IG = 25 mA)
Critical Rate±of±Rise of Commutation Voltage		dv/dtc	1.5	Ð		Ð	V/ms
(f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS,
On±State Current Duration = 2.0 mS, VDRM = 200 V,
Gate Unenergized, TC = 110°C,
Gate Source Resistance = 150 W, See Figure 13)
Critical Rate±of±Rise of Off State Voltage		dv/dt	10	Ð		Ð	V/ms
(Vpk = Rated VDRM, TC = 110°C, Gate Open, Exponential Method)

2	Motorola Thyristor Device Data