Motorola MAC320A8FP, MAC320A6FP, MAC320A10FP, MAC320-6FP, MAC320-4FP Datasheet
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MAC320FP/D
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.
•Blocking Voltage to 800 Volts
•All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
•Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
•Gate Triggering Guaranteed in Three Modes (MAC320FP Series) or
Four Modes (MAC320AFP Series)
MT2 
MT1
G
MAXIMUM RATINGS (TC = 25°C unless otherwise noted.)
MAC320FP
Series
MAC320AFP
Series
ISOLATED TRIACs
THYRISTORS
20 AMPERES RMS
200 thru 800 VOLTS
CASE 221C-02
STYLE 3
Rating |
Symbol |
Value |
Unit |
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Peak Repetitive Off-State Voltage(1) (T = ±40 to +125°C, |
V |
DRM |
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Volts |
J |
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1/2 Sine Wave 50 to 60 Hz, Gate Open) |
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MAC320-4FP, MAC320A4FP |
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200 |
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MAC320-6FP, MAC320A6FP |
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400 |
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MAC320-8FP, MAC320A8FP |
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600 |
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MAC320-10FP, MAC320A10FP |
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800 |
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Peak Gate Voltage |
VGM |
10 |
Volts |
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On-State RMS Current (T = +75°C, Full Cycle Sine Wave 50 to 60 Hz)(2) |
I |
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20 |
Amps |
C |
T(RMS) |
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Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +75°C, |
ITSM |
150 |
Amps |
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preceded and followed by rated current) |
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Peak Gate Power (TC = +75°C, Pulse Width = 2 μs) |
PGM |
20 |
Watts |
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Average Gate Power (TC = +75°C, t = 8.3 ms) |
PG(AV) |
0.5 |
Watt |
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Peak Gate Current |
IGM |
2 |
Amps |
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RMS Isolation Voltage (TA = 25°C, Relative Humidity p 20%) |
V(ISO) |
1500 |
Volts |
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Operating Junction Temperature |
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TJ |
±40 to +125 |
°C |
Storage Temperature Range |
Tstg |
±40 to +150 |
°C |
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THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
RθJC |
1.8 |
°C/W |
Thermal Resistance, Case to Sink |
RθCS |
2.2 (typ) |
°C/W |
Thermal Resistance, Junction to Ambient |
RθJA |
60 |
°C/W |
1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
2.The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.
Motorola, Inc. 1995
MAC320FP Series MAC320AFP |
Series |
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) |
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Characteristic |
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Symbol |
Min |
Typ |
Max |
Unit |
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Peak Blocking Current |
TJ = 25°C |
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IDRM |
Ð |
Ð |
10 |
μA |
(VD = Rated VDRM, Gate Open) |
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TJ = +125°C |
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Ð |
Ð |
2 |
mA |
Peak On-State Voltage (Either Direction) |
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VTM |
Ð |
1.4 |
1.7 |
Volts |
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(ITM = 28 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%) |
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Peak Gate Trigger Current |
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IGT |
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mA |
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms |
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Minimum Gate Pulse Width = 2 μs) |
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MT2(+), G(+) |
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Ð |
Ð |
50 |
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MT2(+), G(±) |
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Ð |
Ð |
50 |
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MT2(±), G(±) |
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Ð |
Ð |
50 |
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MT2(±), G(+) ªAº SUFFIX ONLY |
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Ð |
Ð |
75 |
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Peak Gate Trigger Voltage |
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VGT |
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Volts |
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms |
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Minimum Gate Pulse Width = 2 μs) |
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MT2(+), G(+) |
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Ð |
0.9 |
2 |
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MT2(+), G(±) |
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Ð |
0.9 |
2 |
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MT2(±), G(±) |
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Ð |
1.1 |
2 |
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MT2(±), G(+) ªAº SUFFIX ONLY |
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Ð |
1.4 |
2.5 |
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(Main Terminal Voltage = Rated VDRM, RL = 10 , TJ = +110°C) |
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MT2(+), G(+); MT2(+), G(±) |
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0.2 |
Ð |
Ð |
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MT2(±), G(±); MT2(±), G(+) ªAº SUFFIX ONLY |
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0.2 |
Ð |
Ð |
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Holding Current (Either Direction) |
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IH |
Ð |
6 |
40 |
mA |
(Main Terminal Voltage = 12 Vdc, Gate Open, |
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Initiating Current = 200 mA) |
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Turn-On Time |
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tgt |
Ð |
1.5 |
10 |
μs |
(VD = Rated VDRM, ITM = 28 A, IGT = 120 mA, |
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Rise Time = 0.1 μs, Pulse Width = 2 |
μs) |
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Critical Rate of Rise of Commutation Voltage |
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dv/dt(c) |
Ð |
5 |
Ð |
V/μs |
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(VD = Rated VDRM, ITM = 28 A, Commutating di/dt = 10 A/ms, |
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Gate Unenergized, TC = +75°C) |
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TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (°C)
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TYPICAL CHARACTERISTICS |
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130 |
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40 |
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120 |
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(WATT) |
35 |
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α |
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α = 30° |
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α |
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dc |
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110 |
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60°90° |
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30 |
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90°180° |
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POWER |
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α = Conduction |
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100 |
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25 |
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AVERAGE, |
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Angle |
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90 |
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180° |
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20 |
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60° |
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80 |
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α |
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D(AV) |
15 |
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70 |
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α |
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dc |
10 |
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α = 30° |
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60 |
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α = Conduction |
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P |
5.0 |
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50 |
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Angle |
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0 |
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2.0 |
4.0 |
6.0 |
8.0 |
10 |
12 |
14 |
16 |
18 |
20 |
2.0 |
4.0 |
6.0 |
8.0 |
10 |
12 |
14 |
16 |
18 |
20 |
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0 |
0 |
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IT(RMS), RMS ON-STATE CURRENT (AMP) |
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IT(RMS), RMS ON-STATE CURRENT (AMP) |
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Figure 1. RMS Current Derating |
Figure 2. On-State Power Dissipation |
2 |
Motorola Thyristor Device Data |
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