Motorola MAC320A8, MAC320A6, MAC320A4, MAC320A10, MAC320-8 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MAC320/D

Triacs

Silicon Bidirectional Thyristors

. . . designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.

•Blocking Voltage to 800 Volts

•All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability

•Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability

•Gate Triggering Guaranteed in Three Modes (MAC320 Series) or Four Modes (MAC320A Series)

MAXIMUM RATINGS (TC = 25°C unless otherwise noted.)

MAC320

Series

MAC320A

Series

TRIACs

20 AMPERES RMS

200 thru 800 VOLTS

MT1

MT2	G

CASE 221A-04 (TO-220AB)

STYLE 4

Rating	Symbol		Value	Unit
Peak Repetitive Off-State Voltage(1) (T = ±40 to +125°C,	V	DRM		Volts
J
1/2 Sine Wave 50 to 60 Hz, Gate Open)
			200
MAC320-4, MAC320A4			400
MAC320-6, MAC320A6			600
MAC320-8, MAC320A8			800
MAC320-10, MAC320A10
Peak Gate Voltage	VGM		10	Volts
On-State Current RMS (TC = +75°C)	IT(RMS)		20	Amp
(Full Cycle, Sine Wave, 50 to 60 Hz)
Peak Surge Current (One Full Cycle, 60 Hz, TC = +75°C)	ITSM		150	Amp
preceded and followed by rated current
Peak Gate Power (TC = +75°C, Pulse Width = 2 μs)	PGM		20	Watts
Average Gate Power (TC = +75°C, t = 8.3 ms)	PG(AV)		0.5	Watt
Peak Gate Current	IGM		2	Amp
Operating Junction Temperature Range		TJ	±40 to +125	°C
Storage Temperature Range	Tstg		±40 to +150	°C
THERMAL CHARACTERISTICS
Characteristic	Symbol		Max	Unit
Thermal Resistance, Junction to Case	RθJC		1.8	°C/W

1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Motorola, Inc. 1995

MAC320 Series MAC320A	Series
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic		Symbol	Min	Typ	Max	Unit
Peak Blocking Current	TJ = 25°C	IDRM	Ð	Ð	10	μA
(VD Rated VDRM, Gate Open)
	TJ = +125°C		Ð	Ð	2	mA
Peak On-State Voltage (Either Direction)		VTM	Ð	1.4	1.7	Volts
(ITM = 28 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc)		IGT				mA
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2 (+), G(+); MT2 (+), G(±); MT2 (±), G(±)			Ð	Ð	50
MT2 (±), G(+) ªAº SUFFIX ONLY			Ð	Ð	75
Gate Trigger Voltage (Continuous dc)		VGT	Ð	0.9	2	Volts
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2 (+), G(+); MT2 (+), G(±); MT2 (±), G(±)			Ð	1.4	2.5
MT2 (±), G(+) ªAº SUFFIX ONLY
(Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ =+110°C)
MT2 (+), G(+); MT2 (±), G(±); MT2 (+), G(±);			0.2	Ð	Ð
MT2 (±), G(+) ªAº SUFFIX ONLY			0.2	Ð	Ð
Holding Current (Either Direction)		IH	Ð	6	40	mA
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 200 mA)
Turn-On Time		tgt	Ð	1.5	Ð	μs
(VD = Rated VDRM, ITM = 28 A,
IGT = 120 mA, Rise Time = 0.1 μs, Pulse Width = 2 μs)
Critical Rate of Rise of Commutation Voltage		dv/dt(C)	Ð	5	Ð	V/μs
(VD = Rated VDRM, ITM = 28 A, Commutating
di/dt = 10 A/ms, Gate Unenergized, TC = +75°C)

	(°C)		FIGURE 1 Ð RMS CURRENT DERATING
		130
	TEMPERATURE
		120
		110							α = 30°
										60°
										90°
	CASE	100
		90
	ALLOWABLE
		80			α					180°
		70
				α							dc
	,MAXIMUM
		60		α = Conduction
		50		Angle
			2.0	4.0	6.0	8.0	10	12	14	16	18	20
	C	0
	T			IT(RMS), RMS ON-STATE CURRENT (AMP)

FIGURE 2 Ð ON-STATE POWER DISSIPATION

	40
(WATT)	35			α
	30		α							90°180°	dc
POWER			α = Conduction
	25
			Angle
, AVERAGE	20
	15									60°
D(AV)	10								α = 30°
P	5.0
	0	2.0	4.0	6.0	8.0	10	12	14	16	18	20
	0
			IT(RMS), RMS ON-STATE CURRENT (AMP)

2	Motorola Thyristor Device Data