MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MAC321/D
Triacs |
MAC321 |
Silicon Bidirectional Thyristors |
Series |
. . . designed for full-wave ac control applications primarily in industrial environments |
|
needing noise immunity. |
|
• Guaranteed High Commutation Voltage |
|
|
|
dv/dt Ð 500 V/ μs Min @ TC = 25°C |
TRIACs |
• High Blocking Voltage Ð V DRM to 800 V |
20 AMPERES RMS |
• Photo Glass Passivated Junction for Improved Power Cycling Capability and |
200 thru 800 VOLTS |
Reliability |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
MT2 |
|
|
|
|
MT1 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
G |
|
|
|
CASE 221A-04 |
|||
|
|
|
|
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
(TO-220AB) |
|
|
|
|
|
|
|
|
|
|
|
|
STYLE 4 |
|
|
MAXIMUM RATINGS (TC = 25°C unless otherwise noted.) |
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|||||
Rating |
|
Symbol |
Value |
|
Unit |
|||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
Peak Repetitive Off-State Voltage(1) (T = ±40 to +125°C, |
|
V |
DRM |
|
|
Volts |
||||||
J |
|
|
|
|
|
|||||||
1/2 Sine Wave 50 to 60 Hz, Open Gate) |
|
|
|
|
|
|
|
|
||||
MAC321-4 |
|
|
|
|
|
200 |
|
|
||||
MAC321-6 |
|
|
|
|
|
400 |
|
|
||||
MAC321-8 |
|
|
|
|
|
600 |
|
|
||||
MAC321-10 |
|
|
|
|
|
800 |
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
Peak Gate Voltage |
|
VGM |
10 |
|
Volts |
|||||||
On-State Current RMS (TC = +75°C |
|
IT(RMS) |
20 |
|
Amp |
|||||||
Full Cycle Sine Wave 50 to 60 Hz) |
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
Peak Surge Current (One Full Cycle, 60 Hz, TC = +75°C |
|
ITSM |
150 |
|
Amp |
|||||||
preceded and followed by Rated Current) |
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
Circuit Fusing Considerations (t = 8.3 ms) |
|
|
I2t |
93 |
|
A2s |
||||||
Peak Gate Power (TC = +75°C, Pulse Width = 2.0 μs) |
|
PGM |
20 |
|
Watts |
|||||||
Average Gate Power (TC = +75°C, t = 8.3 ms) |
|
PG(AV) |
0.5 |
|
Watt |
|||||||
Peak Gate Current |
|
IGM |
2.0 |
|
Amp |
|||||||
Operating Junction Temperature Range |
|
|
TJ |
±40 to +125 |
|
°C |
||||||
Storage Temperature Range |
|
Tstg |
±40 to +150 |
|
°C |
|||||||
THERMAL CHARACTERISTICS |
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
||
Characteristic |
|
Symbol |
Max |
|
Unit |
|||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
Thermal Resistance, Junction to Case |
|
RθJC |
1.8 |
|
°C/W |
|||||||
1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Motorola, Inc. 1995
MAC321 Series
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
|
|
|
|
|
|
Peak Blocking Current |
IDRM |
|
|
|
|
(VD = Rated VDRM, Gate Open) |
|
|
|
|
|
TJ = 25°C |
|
Ð |
Ð |
10 |
μA |
TJ = +125°C |
|
Ð |
Ð |
2.0 |
mA |
Peak On-State Voltage (Either Direction) |
VTM |
Ð |
1.4 |
1.7 |
Volts |
(ITM = 28 A Peak; Pulse Width p 2.0 ms, Duty Cycle p 2.0%) |
|
|
|
|
|
Gate Trigger Current (Continuous dc) |
IGT |
|
|
|
mA |
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) |
|
|
|
|
|
MT2(+), G(+) |
|
Ð |
Ð |
100 |
|
MT2(+), G(±) |
|
Ð |
Ð |
100 |
|
MT2(±), G(±) |
|
Ð |
Ð |
100 |
|
|
|
|
|
|
|
Gate Trigger Voltage (Continuous dc) |
VGT |
|
|
|
Volts |
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) |
|
|
|
|
|
MT2(+), G(+) |
|
Ð |
Ð |
2.0 |
|
MT2(+), G(±) |
|
Ð |
Ð |
2.0 |
|
MT2(±), G(±) |
|
Ð |
Ð |
2.0 |
|
(Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C) |
|
|
|
|
|
MT2(+), G(+); MT2(±), G(±); MT2(+), G(±) |
|
0.2 |
Ð |
Ð |
|
|
|
|
|
|
|
Holding Current (Either Direction) |
IH |
Ð |
Ð |
100 |
mA |
(Main Terminal Voltage = 12 Vdc, Gate Open, |
|
|
|
|
|
Initiating Current = 200 mA) |
|
|
|
|
|
|
|
|
|
|
|
Turn-On Time |
tgt |
Ð |
1.5 |
Ð |
μs |
(VD = Rated VDRM, ITM = 28 A, IGT = 120 mA, |
|
|
|
|
|
Rise Time = 0.1 μs, Pulse Width = 2.0 μs) |
|
|
|
|
|
|
|
|
|
|
|
Critical Rate of Rise of Off-State Voltage |
dv/dt(s) |
|
|
|
V/μs |
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open) |
|
|
|
|
|
TJ = 25°C |
|
500 |
Ð |
Ð |
|
TJ = +125°C |
|
200 |
Ð |
Ð |
|
|
|
|
|
|
|
|
|
|
TYPICAL CHARACTERISTICS |
|
|
|
|
|
|
|
|
||||||
(°C) |
130 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
CASE TEMPERATURE |
|
|
|
|
|
|
|
|
|
|
|
40 |
|
|
|
|
|
|
|
|
|
|
|
120 |
|
|
|
|
|
|
|
|
|
|
, AVERAGE POWER (WATT) |
35 |
|
|
|
α |
|
|
|
|
|
|
|
|
|
|
|
|
|
α = 30° |
|
|
|
|
|
|
|
|
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
|
|
α |
|
|
|
|
|
|
90°180° dc |
|||||
110 |
|
|
|
|
|
|
|
60°90° |
|
|
30 |
|
|
|
|
|
|
|
|||||
100 |
|
|
|
|
|
|
|
|
|
|
25 |
|
α = CONDUCTION |
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
ANGLE |
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
90 |
|
|
|
|
|
|
|
|
|
|
20 |
|
|
|
|
|
|
|
|
|
|
||
80 |
|
|
α |
|
|
|
|
180° |
|
|
15 |
|
|
|
|
|
|
|
|
60° |
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
ALLOWABLE |
70 |
|
α |
|
|
|
|
|
|
dc |
|
D(AV) |
10 |
|
|
|
|
|
|
|
α = 30° |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
MAXIMUM |
60 |
α = CONDUCTION |
|
|
|
|
|
|
|
P |
5 |
|
|
|
|
|
|
|
|
|
|
||
50 |
|
ANGLE |
|
|
|
|
|
|
|
|
0 |
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
, |
2 |
4 |
6 |
8 |
10 |
12 |
14 |
16 |
18 |
20 |
|
2 |
4 |
6 |
8 |
10 |
12 |
14 |
16 |
18 |
20 |
||
C |
0 |
|
0 |
||||||||||||||||||||
T |
|
|
IT(RMS), RMS ON-STATE CURRENT (AMP) |
|
|
|
|
|
IT(RMS), RMS ON-STATE CURRENT (AMP) |
|
|
||||||||||||
|
|
|
|
|
|
|
|
|
|
||||||||||||||
Figure 1. RMS Current Derating |
Figure 2. On-State Power Dissipation |
2 |
Motorola Thyristor Device Data |
Loading...