Texas Instruments TL 3009, TL 3010, TL 3011, TL 3012 INSTALLATION INSTRUCTIONS

	TIL3009, TIL3010, TIL3011, TIL3012
	OPTOCOUPLERS/OPTOISOLATORS
	SOES027A ± DECEMBER 1987 ± REVISED APRIL 1998
D 250-V Phototriac Driver Output	TIL30xx PACKAGE
	(TOP VIEW)

DGallium-Arsenide-Diode Infrared Source

and Optically-Coupled Silicon Triac Driver

ANODE

1

6

MAIN TERM

(Bilateral Switch)

CATHODE

2

5

TRIAC SUB²

UL Recognized . . . File Number E65085

D

NC

3

4

MAIN TERM

D

High Isolation . . . 3535 V peak

D

Output Driver Designed for 115 Vac

² Do not connect this terminal

D

Standard 6-Pin Plastic DIP

NC ± No internal connection

typical 115 Vac(rms) applications

logic diagram

D

Solenoid/Valve Controls

D

Lamp Ballasts

1

6

D Interfacing Microprocessors to 115-Vac

Peripherals

2

4

DMotor Controls

DIncandescent Lamp Dimmers

description

Each device consists of a gallium-arsenide infrared-emitting diode optically coupled to a silicon phototriac mounted on a 6-pin lead frame encapsulated within an electrically nonconductive plastic compound. The case withstands soldering temperature with no deformation. Device performance characteristics remain stable when operated in high-humidity conditions.

absolute maximum ratings at 25°C free-air (unless otherwise noted)²

www.DataSheet4U.com
Input-to-output peak voltage, 5 s maximum duration, 60 Hz (see Note 1) . . . . . . . . . . . . . . . .	. . . . . .	3.535 kV
Input diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . .	. . . . 3 V
Input diode forward current, continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . .	. 50 mA
Output repetitive peak off-state voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . .	. . 250 V
Output on-state current, total rms value (50-60 Hz, full sine wave): TA = 25° . . . . . . . . . . . . . .	. . . . . .	100 mA
TA = 70° . . . . . . . . . . . . . .	. . . . . .	. 50 mA
Output driver nonrepetitive peak on-state current (tw = 10 ms, duty cycle = 10%, see Figure 7) . . . .		. . 1.2 A
Continuous power dissipation at (or below) 25°C free-air temperature:
Infrared-emitting diode (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . .	100 mW
Phototriac (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . .	300 mW
Total device (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . .	330 mW
Operating junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	±40°C to 100°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	±40°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . .	. 260°C

²Stresses beyond those listed under ªabsolute maximum ratingsº may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ªrecommended operating conditionsº is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. Input-to-output peak voltage is the internal device dielectric breakdown rating.

2.Derate linearly to 100°C free-air temperature at the rate of 1.33 mW/°C.

3.Derate linearly to 100°C free-air temperature at the rate of 4 mW/°C.

4.Derate linearly to 100°C free-air temperature at the rate of 4.4 mW/°C.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Copyright 1998, Texas Instruments Incorporated

POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

1

TIL3009, TIL3010, TIL3011, TIL3012

OPTOCOUPLERS/OPTOISOLATORS

SOES027A ± DECEMBER 1987 ± REVISED APRIL 1998

electrical characteristics 25°C free-air temperature range (unless otherwise noted)

		PARAMETER		TEST CONDITIONS		MIN TYP	MAX	UNIT
	IR	Static reverse current		VR = 3 V		0.05	100	μA
	VF	Static forward voltage		IF = 10 mA		1.2	1.5	V
	IDRM	Repetitive off-state current, either direction		VDRM = 250 V,	See Note 5	10	100	nA
	dv/dt	Critical rate of rise of off-state voltage		See Figure 1		12		V/μs
	dv/dt(c)	Critical rate of rise of commutating voltage		IO = 15 mA,	See Figure 1	0.15		V/μs
			TIL3009			15	30
	IFT	Input trigger current either direction	TIL3010	Output supply voltage = 3 V		8	15	mA
			TIL3011			5	10
			TIL3012				5
	VTM	Peak on-state voltage, either direction		ITM = 100 mA		1.8	3	V
	IH	Holding current, either direction				100		μA

NOTE 5: Test voltage must be applied within dv/dt rating.

PARAMETER MEASUREMENT INFORMATION
	VCC
	1	6
			Vin = 30 V rms
	2	4	RL
Input	10 kΩ	2N3904
(see Note A)

NOTE A. The critical rate of rise of off-state voltage, dv/dt, is measured with the input set at 0 volts. The frequency of Vin is increased until the phototriac turns on. This frequency is then used to calculate the dv/dt according to the following formula:

dv dt + 2 2 p f Vin

The critical rate of rise of commutating voltage, dv/dt(c), is measured by applying occasional 5-volt pulses to the input and increasing the frequency of Vin until the phototriac remains on (latches) after the input pulse has ceased. With no further input pulses, the frequency of Vin is then gradually decreased until the phototriac turns off. The frequency at which turn-off occurs can then be used to calculate the dv/dt(c) according to the formula shown above.

Figure 1. Critical Rate of Rise Test Circuit

2	POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

	TIL3009, TIL3010, TIL3011, TIL3012
	OPTOCOUPLERS/OPTOISOLATORS
	SOES027A ± DECEMBER 1987 ± REVISED APRIL 1998
TYPICAL CHARACTERISTICS
EMITTING DIODE TRIGGER CURRENT (NORMALIZED)
vs	ON-STATE CHARACTERISTICS
FREE-AIR TEMPERATURE

Emitting Diode Trigger Current (Normalized)

1.4

1.3

1.2

1.1

1
0.9
0.8
± 50	± 25	0	25	50	75	100

TA ± Free-Air Temperature ± °C

	800	Output tw = 80 μs
	600	IF = 20 mA
		f = 60 Hz
± mA
	400	TA = 25°C
Current	200
On-State	0
	± 200
± Peak
	± 400
TM
I	± 600
	± 800
	± 3	± 2	± 1	0	1	2	3

VTM ± Peak On-State Voltage ± V

Figure 2

Figure 3

Off-State dv/dt ± V/ μs

CRITICAL RATE OF RISE OF OUTPUT VOLTAGE

OFF-STATE dv/dt AND COMMUTATING dv/dt(c) vs

LOAD RESISTANCE

14														0.24
		TA = 25		°C
13														0.22
		See Figure 1
12								Off-State						0.20	V/μ s
11														0.18
															±
10														0.16	dv/dt(c)
9														0.14	Commutating
					Commutating
8														0.12
7														0.10
6														0.08
5											dv/dt			0.06
											dv/dt(c)
4														0.04
0		0.4			0.8			1.2			1.6		2
					RL ± Load Resistance ± kΩ

Figure 4

POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

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