TEXAS INSTRUMENTS TIL920, TIL921, TIL922, TIL920A, TIL921A Technical data
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TIL920, TIL921, TIL922, TIL920A, TIL921A, TIL922A |
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TIL920B, TIL921B, TIL922B |
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SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS |
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SOOS032±D3908, FEBRUARY 1992 |
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• AC Signal Input |
• Choice of Three Current-Transfer Ratios |
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• Gallium-Arsenide Diode Infrared Source |
• High-Voltage Electrical Isolation . . . 7.5 kV |
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• Source Is Optically Coupled to Silicon |
Peak (5.3 kV rms) |
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• Plastic Dual-In-Line Packages |
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N-P-N Phototransistor |
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• Choice of One, Two, or Four Channels |
• UL Listed ± File No. E65085 |
description
These optocouplers consist of two gallium-arsenide light-emitting diodes connected in a reverse-parallel configuration for ac-input applications and a silicon n-p-n phototransistor per channel. The TIL920 has one channel in a 4-pin package, the TIL921 has two channels in an 8-pin package, and the TIL922 has four channels in a 16-pin package. The standard devices, TIL920, TIL921, and TIL922, are tested for a current-transfer ratio of 20% minimum. Devices selected for a current-transfer ratio of 50% and 100% minimum are designated with the suffix A and B respectively.
mechanical data
4,80 (0.189)
4,19 (0.165)
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TIL920 |
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1 |
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10,2 (0.400) |
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9,2 (0.362) |
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TIL921 |
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1 |
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21,1 (0.831) |
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18,5 (0.728) |
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TIL922 |
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C |
C |
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1 |
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L |
L |
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7,62 (0.300) T.P. |
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(see Note A) |
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2,79 (0.110) |
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6,76 (0.266) |
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1,27 (0.050) |
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2,29 (0.090) |
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1,12 (0.044) |
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6,25 (0.246) |
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(see Note A) |
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3,81 (0.150) |
5,08 (0.200) MAX |
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3,30 (0.130) |
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105° |
Seating Plane |
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90° |
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0,36 (0.014) |
3,81 (0.150) |
0,51 (0.020) MIN |
0,58 (0.023) |
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2,54 (0.100) |
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0,20 (0.008) |
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0,43 (0.017) |
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ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES
NOTE A: Each pin centerline is located 0,25 (0.010) of its true longitudinal position.
PRODUCTION DATA information is current as of publication date. |
Copyright 1992, Texas Instruments Incorporated |
Products conform to specifications per the terms of Texas Instruments |
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standard warranty. Production processing does not necessarily include |
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testing of all parameters. |
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POST OFFICE BOX 655303 •DALLAS, TEXAS 75265 |
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TIL920, TIL921, TIL922, TIL920A, TIL921A, TIL922A
TIL920B, TIL921B, TIL922B
SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS
SOOS032±D3908, FEBRUARY 1992
schematic diagrams
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TIL920 |
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TIL921 |
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TIL922 |
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(TOP VIEW) |
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(TOP VIEW) |
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(TOP VIEW) |
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1 |
4 |
1 A/K |
1 |
8 |
1C |
1A/K |
1 |
16 |
1C |
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A/K |
C |
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2 |
3 E |
1 K/A |
2 |
7 |
1E |
1K/A |
2 |
15 |
1E |
K/A |
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2 A/K |
3 |
6 |
2C |
2A/K |
3 |
14 |
2C |
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2 K/A |
4 |
5 |
2E |
2K/A |
4 |
13 |
2E |
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5 |
12 |
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3A/K |
3C |
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3K/A |
6 |
11 3E |
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7 |
10 |
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4A/K |
4C |
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4K/A |
8 |
9 4E |
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absolute maximum ratings, TA = 25°C (unless otherwise noted) |
±7.5 kV peak or dc (± 5.3 kV rms) |
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Input-to-output voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Collector-emitter voltage (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . . . . . . . . . . . . . . . . . 35 |
V |
Emitter-collector voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . . . . . . . . . . . . . . . . . . . 7 |
V |
Input diode continuous forward current at (or below) 25°C free-air temperature (see Note 3) |
. . . . . ± 50 mA |
Continuous power dissipation at (or below) 25°C free-air temperature: |
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Phototransistor (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . 150 mW |
Input diode plus phototransistor per channel (see Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . 200 mW |
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
±55°C to 100°C |
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
±55°C to 125°C |
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . 260°C |
NOTES: 1. This rating applies for sine-wave operation at 50 or 60 Hz. Service capability is verified by testing in accordance with UL requirements.
2.This value applies when the base-emitter diode is open circuited.
3.Derate linearly to 100°C free-air temperature at the rate of 0.67 mA/°C.
4.Derate linearly to 100°C free-air temperature at the rate of 2 mW/°C.
5.Derate linearly to 100°C free-air temperature at the rate of 2.67 mW/°C.
electrical characteristics, TA = 25°C (unless otherwise noted)
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PARAMETER |
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TEST CONDITIONS |
MIN |
TYP MAX |
UNIT |
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V(BR)CEO |
Collector-emitter breakdown voltage |
IC = 0.5 mA, |
IF = 0 |
35 |
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V |
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V(BR)ECO |
Emitter-collector breakdown voltage |
IC = 100 μA, |
IF = 0 |
7 |
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V |
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IC(off) |
Off-state collector current |
VCE = 24 V, |
IF = 0 |
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100 |
nA |
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Current |
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TIL920, TIL921, TIL922 |
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20% |
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CTR² |
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transfer |
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TIL920A, TIL921A, TIL922A |
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= 5 mA, |
V = 5 V |
50% |
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F |
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CE |
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ratio |
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TIL920B, TIL921B, TIL922B |
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100% |
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V ² |
Input diode static forward voltage |
I |
= 20 mA |
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1.4 |
V |
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F |
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F |
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VCE(sat)² |
Collector-emitter saturation voltage |
IF = 5 mA, |
IC = 1 mA |
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0.4 |
V |
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Cio |
Input-to-output capacitance |
Vin-out = 0, |
f = 1 MHz, See Note 6 |
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1 |
pF |
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r |
io |
Input-to-output internal resistance |
V |
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= ±1 kV, |
See Note 6 |
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1011 |
Ω |
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in-out |
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IC(on)1 |
On-state collector current symmetry ratio |
VCE = 5 V, |
IF = 5 mA |
1 |
3 |
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IC(on)2 |
(see Note 7) |
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² These parameters apply to either direction of the input current.
NOTES: 6. These parameters are measured between all input-diode leads shorted together and all phototransistor leads shorted together. 7. The higher of the two values of IC(on) generated by the two diodes is taken as IC(on)1.
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POST OFFICE BOX 655303 •DALLAS, TEXAS 75265 |
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