NSC CLC532MDC, CLC532AMC, CLC532AJP, CLC532AJE, 5962-9203501MCA Datasheet

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June 1999

 

CLC532

High-Speed 2:1 Analog Multiplexer

General Description

The CLC532 is a high-speed 2:1 multiplexer with active input and output stages. The CLC532 also employs a closed-loop design which dramatically improves accuracy. This monolithicdevice is constructed using an advanced high-performance bipolar process.

The CLC532 has been specifically designed to provide settling times of 17ns to 0.01%. This, coupled with the adjustable noise-bandwidth, makes the CLC532 an ideal choice for infrared and CCD imaging systems. Channel-to-channel isolation is better than 80dB @ 10MHz. Low distortion (80dBc) and spurious signal levels make the CLC532 a very suitable choice for both I/Q processors and receivers.

TheCLC532isofferedoverboththeindustrialandmilitarytemperature ranges. The Industrial versions, CLC532AJP\AJE\AID, are specified from -40°C to +85°C and are packaged in 14-pin plastic DIP's, 14-pin SOIC'sand14-pinSide-Brazedpackages. Theextendedtemperature versions,CLC532A8B/A8D/A8L-2,arespecifiedfrom-55°Cto+125°C and are packaged in a 14-pin hermetic DIP and 20-terminal LCC packages. (Contact factory for LCC and CERDIP availability.)

Ordering Information ...

CLC532AJP

-40oC to +85oC

14-pin plastic DIP

CLC532AJE

-40oC to +85oC

14-pin plastic SOIC

CLC532ALC

-40oC to +85oC

dice

CLC532AMC

-55oC to +125oC

dice, MIL-STD-833

CLC532A8B

-55oC to +125oC

14-pin CERDIP;

 

 

MIL-STD-883

CLC532A8L-2A

-55oC to +125oC

20-terminal LCC;

 

 

MIL-STD-883

Contact factory for other packages and DESC SMD number.

Features

12-bit settling (0.01%) - 17ns

Low noise - 32 Vrms

High isolation - 80dB @ 10MHz

Low distortion - 80dBc @ 5MHz

Adjustable bandwidth - 190MHz (max)

Applications

Infrared system multiplexing

CCD sensor signals

Radar I/Q switching

High definition video HDTV

Test and calibration

Speed-High

CLC532

Multiplexer Analog 2:1

 

Typical Application

CHANNEL A

 

 

CCOMP1

2

INA

 

 

1

 

 

 

RIN

12

 

 

 

CLC532

11

VOUT

 

6

 

CHANNEL B

10

RL

 

4

INB

DREF

 

3

 

 

7

 

 

RIN

 

 

CCOMP2

CHANNEL

SELECT OUTPUT

1

Channel A

SELECT

 

0

Channel B

1999 National Semiconductor Corporation

20-Terminal LCC

 

DGND

NC

IN

NC

GND

 

 

 

 

B

 

 

 

 

8

7

6

5

4

INDEX CORNER

 

 

 

 

 

 

DREF

9

 

 

 

3

INA

SELECT 10

 

 

 

2

GND

NC 11

TOP VIEW

1

NC

VEE

12

 

 

 

20

+Vcc

VEE

13

 

 

 

19

+Vcc

 

14 15

16

17

18

 

 

COMP

NC

OUTPUT

NC

COMP

 

 

2

1

 

Pinout

DIP & SOIC

 

 

 

 

 

 

 

GND

 

1

 

14

 

+VCC

 

 

 

INA

 

2

 

13

 

+VCC

 

 

GND

 

3

 

12

 

COMP1

 

 

INB

 

4

 

11

 

OUTPUT

 

 

DGND

 

5

 

10

 

COMP2

 

 

 

 

DREF

 

6

 

9

 

VEE

 

 

 

 

SELECT

 

7

 

8

 

VEE

 

 

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Printed in the U.S.A.

Electrical Characteristics (+VCC=+5.0V; -VEE=-5.2V; RIN=50Ω; RL=500Ω; CCOMP=10pF; ECL Mode, pin 6 = NC)

PARAMETER1

 

CONDITIONS

TYP

 

MAX/MIN RATINGS2

 

UNITS

SYMBOL

Case Temperature

CLC532AJP/AJE/AIB

+25° C

 

-40° C

+25° C

+85° C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FREQUENCY DOMAIN PERFORMANCE

 

 

 

 

 

 

 

 

 

 

 

 

-3dB bandwidth

 

VOUT<0.1Vpp

190

 

140

140

110

 

MHz

SSBW

-3dB bandwidth

 

VOUT=2Vpp

45

 

35

35

30

 

MHz

LSBW

gain flatness

 

VOUT<0.1Vpp

0.2

 

0.7

0.7

0.8

 

dB

GFP

peaking

 

0.1MHz to 200MHz

 

 

rolloff

 

0.1MHz to 100MHz

1.0

 

1.8

1.8

2.6

 

dB

GFR

linear phase deviation

dc to 100MHz

2.0

 

 

 

 

 

deg

LPD

differential

gain

 

CCOMP = 5pF; RL=150Ω

0.05

 

 

 

 

 

%

 

 

 

DG

differential

phase

CCOMP = 5pF; RL=150Ω

0.01

 

75

75

74

 

deg

DP

crosstalk rejection

2Vpp, 10MHz

80

 

 

dB

CT10

 

 

 

2Vpp, 20MHz

74

 

69

69

68

 

dB

CT20

 

 

 

2Vpp, 30MHz

68

 

63

63

62

 

dB

CT30

 

 

 

 

 

 

 

 

 

 

 

 

 

TIME DOMAIN PERFORMANCE

 

 

 

 

 

 

 

 

 

 

 

 

rise and fall time

 

0.5V step

2.7

 

3.3

3.3

3.8

 

ns

TRS

 

 

 

2V step

10

 

12.5

12.5

14.5

 

ns

TRL

settling time

2V step; from 50% VOUT

±0.0025%

35

 

24

24

27

 

ns

TS14

 

 

 

±0.01%

17

 

 

ns

TSP

 

 

 

±0.1%

13

 

18

18

21

 

ns

TSS

overshoot

 

 

2.0V step

2

 

5

5

6

 

%

 

 

 

OS

slew rate

 

 

 

160

 

130

130

110

 

V/µs

SR

 

 

 

 

 

 

 

 

 

 

 

 

 

SWITCH PERFORMANCE

 

 

 

 

 

 

 

 

 

 

 

 

channel to channel switching time

50% SELECT to 10%VOUT

5

 

7

7

8

 

ns

SWT10

(2V step at output)

50% SELECT to 90%VOUT

15

 

20

20

23

 

ns

SWT90

switching

transient

 

30

 

 

 

 

 

mV

ST

 

 

 

 

 

 

 

 

 

 

 

 

DISTORTION AND NOISE PERFORMANCE

 

 

 

 

 

 

 

 

 

 

 

2nd harmonic distortion

2Vpp, 5MHz

80

 

67

67

67

 

dBc

HD2

3rd harmonic distortion

2Vpp, 5MHz

86

 

68

68

68

 

dBc

HD3

equivalent

input

noise

 

 

 

 

 

 

 

 

 

 

 

 

spot noise voltage

>1MHz

3.1

 

 

 

 

 

nV/√

Hz

 

SNF

integrated noise

1MHz to 100MHz

32

 

42

42

46

 

µVrms

INV

spot noise current

 

3

 

 

 

 

 

pA/√

Hz

 

SNC

 

 

 

 

 

 

 

 

 

 

 

 

 

STATIC AND DC PERFORMANCE

 

 

 

 

 

 

 

 

 

 

 

 

* analog output offset voltage

 

1

 

6.5

3.5

5.5

 

mV

VOS

temperature coefficient

 

15

 

90

 

20

 

µV/°C

DVIO

analog output offset voltage matching

 

TBD

 

 

 

 

 

mV

VOSM

* analog input bias current

 

50

 

250

120

120

 

µA

IBN

temperature coefficient

 

0.3

 

2.0

 

0.8

 

µA/°C

DIBN

analog input bias current matching

 

TBD

 

 

 

 

 

µA

IBNM

analog input resistance

 

200

 

90

120

120

 

RIN

analog input capacitance

 

2

 

3.0

2.5

2.5

 

pF

CIN

* gain accuracy

 

±2V

0.998

 

0.988

0.988

0.988

 

V/V

GA

gain matching

 

±2V

TBD

 

 

 

 

 

V/V

GAM

integral endpoint non-linearity

±1V (full scale)

0.02

 

0.05

0.03

0.03

 

%FS

ILIN

output voltage

 

no load

±3.4

 

2.4

2.8

2.8

 

V

VO

output current

 

 

45

 

20

30

30

 

mA

IO

output resistance

dc

1.5

 

4.0

2.5

2.5

 

Ω

RO

 

 

 

 

 

 

 

 

 

 

 

 

 

DIGITAL INPUT PERFORMANCE

 

 

 

 

 

 

 

 

 

 

 

 

ECL mode (pin 6 floating)

 

 

 

 

 

 

 

 

 

 

 

 

input voltage logic HIGH

 

 

 

-1.1

-1.1

-1.1

 

V

VIH1

input voltage logic LOW

 

 

 

-1.5

-1.5

-1.5

 

V

VIL1

input current logic HIGH

 

14

 

50

30

30

 

µA

IIH1

input current logic LOW

 

50

 

270

110

110

 

µA

IIL1

TTL mode (pin 6 = +5V)

 

 

 

 

 

 

 

 

 

 

 

 

input voltage logic HIGH

 

 

 

2.0

2.0

2.0

 

V

VIH2

input voltage logic LOW

 

 

 

0.8

0.8

0.8

 

V

VIL2

input current logic HIGH

 

14

 

50

30

30

 

µA

IIH2

input current logic LOW

 

50

 

270

110

110

 

µA

IIL2

 

 

 

 

 

 

 

 

 

 

 

 

 

POWER REQUIREMENTS

 

 

 

 

 

 

 

 

 

 

 

 

* supply current (+VCC = +5.0V)

no load

23

 

30

28

25

 

mA

ICC

* supply current (-VEE = -5.2V)

no load

24

 

31

30

26

 

mA

IEE

nominal power dissipation

no load

240

 

 

 

 

 

mW

PD

* power supply rejection ratio

 

73

 

60

64

64

 

dB

PSRR

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are determined from tested parameters.

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Recommended Operating Conditions

positive supply voltage (+VCC)

 

+5V

negative supply voltage (-VEE)

 

-5.2V or -5.0V

differential voltage between any two GND’s

10mV

analog input voltage range

 

 

±2V

SELECT input voltage range (TTL mode)

 

0.0V to +3.0V

SELECT input voltage range (ECL mode)

 

-2.0V to 0.0V

CCOMP range2

 

 

0pF to 100pF

thermal data

θJC(°C/W)

θJA(°C/W)

 

14-pin plastic

55

100

 

14-pin Cerdip

35

85

 

14-pin SOIC

35

105

 

20-terminal LCC

35

50

 

Absolute Maximum Ratings3

positive supply voltage (+VCC)

-0.5V to +7.0V

negative supply voltage (-VEE)

+0.5V to -7.0V

differential voltage between any two GND’s

200mV

analog input voltage range

-VEE to +VCC

digital

input voltage range

-VEE to +VCC

output short circuit duration (output shorted to GND)

Infinite

junction

temperature

+150°C

operating temperature range

 

 

CLC532AJP/AJE/AIB

-40°C to +85°C

storage temperature range

-65°C to +150°C

lead solder duration (+300°C)

10 sec

ESD rating

<500V

transistor count

74

Note 1: Test levels are as follows:

*AJ : 100% tested at +25°C.

Note 2: The CLC532 does not require external CCOMP capacitors for proper operation.

Note 3: Absolute maximum ratings are limiting values, to be applied individually, and beyond which the serviceability of the circuit may be impaired. Functional operability under any of these conditions is not necessarily implied. Exposure to maximum ratings for extended periods may affect device reliability.

System Timing Diagram

 

 

SETTLING ERROR

A

 

WINDOW

 

 

SELECT

 

 

B

 

TSx

SWT90

 

 

 

SWT10

TRx

TRx

 

90%

 

 

OUTPUT

 

 

10%

 

 

 

 

CHANNEL A = +1V

 

OS

CHANNEL B = -1V

 

 

... where TSx is TS14 or TSP or TSS, and TRx is TRS ro TSL.

Switching Transient Timing Diagram

A

SELECT

B

 

 

 

 

 

 

~

2ns

ST

~

 

 

 

 

 

 

 

 

 

OUTPUT

Channel A = 0V

Channel B = 0V

3

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NSC CLC532MDC, CLC532AMC, CLC532AJP, CLC532AJE, 5962-9203501MCA Datasheet

CLC532 Electrical Characteristics (+25°C unless specified)

http://www.national.com

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