NSC DS2003TN, DS2003TMX, DS2003TM, DS2003CN, DS2003CMX Datasheet

January 2000

DS2003

High Current/Voltage Darlington Drivers

General Description

The DS2003 is comprised of seven high voltage, high current NPN Darlington transistor pairs. All units feature common emitter, open collector outputs. To maximize their effectiveness, these units contain suppression diodes for inductive loads and appropriate emitter base resistors for leakage.

The DS2003 has a series base resistor to each Darlington pair, thus allowing operation directly with TTL or CMOS operating at supply voltages of 5.0V.

The DS2003 offers solutions to a great many interface needs, including solenoids, relays, lamps, small motors, and

LEDs. Applications requiring sink currents beyond the capability of a single output may be accommodated by paralleling the outputs.

Features

nSeven high gain Darlington pairs

nHigh output voltage (VCE = 50V)

nHigh output current (IC = 350 mA)

nTTL, PMOS, CMOS compatible

nSuppression diodes for inductive loads

nExtended temperature range

Connection Diagram

16-Lead DIP

			DS009647-1
		Top View
Order Numbers
	N Package		M Package
	Number		Number
	N16E		M16A
	DS2003TN		DS2003TM
	DS2003CN		DS2003CM

Drivers Darlington Current/Voltage High DS2003

© 2000 National Semiconductor Corporation

DS009647

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DS2003

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.

Storage Temperature Range	−65ÊC to +150ÊC
Operating Temperature Range
DS2003TN, DS2003TM	−40ÊC to +105ÊC
DS2003CN, DS2003CM	0ÊC to +85ÊC
Lead Temperature
Soldering, 10 seconds	265ÊC
Maximum Power Dissipation* at TA =
25ÊC

N16E Package	1330 mW
M16A Package	770 mW
Input Voltage	30V
Output Voltage	55V
Emitter-Base Voltage	6.0V
Continuous Collector Current	500 mA
Continuous Base Current	25 mA

Note: *Derate N16E package 13.3 mW/ÊC for TA above 25ÊC. Derate M16A package 7.7 mW/ÊC for TA above 25ÊC.

Electrical Characteristics

TA = 25ÊC, unless otherwise specified (Note 2)

Symbol	Parameter	Conditions	Min	Typ	Max	Units
ICEX	Output Leakage	TA = 25ÊC, VCE = 50V (Figure 1 )			20
	Current	TA = 85ÊC, VCE = 50V (Figure 1 ) for DS2003CN, DS2003CM			100	µA
		TA = 105ÊC, VCE = 50V (Figure 1 ) for DS2003TN, DS2003TM			150
VCE(Sat)	Collector-Emitter	IC = 350 mA, IB = 500 µA (Figure 3 ) (Note 3)		1.25	1.6
	Saturation Voltage	IC = 200 mA, IB = 350 µA (Figure 3 )		1.1	1.3	V
		IC = 100 mA, IB = 250 µA (Figure 3 )		0.9	1.1
II(ON)	Input Current	VI = 3.85V (Figure 4 )		0.93	1.35	mA
II(OFF)	Input Current	TA = 85ÊC for DS2003CN, DS2003CM	50	100		µA
	(Note 4)	IC = 500 µA (Figure 5 )
VI(ON)	Input Voltage	VCE = 2.0V, IC = 200 mA (Figure 6 )			2.4
	(Note 5)	VCE = 2.0V, IC = 250 mA (Figure 6 )			2.7	V
		VCE = 2.0V, IC = 300 mA (Figure 6 )			3.0
CI	Input Capacitance			15	30	pF
tPLH	Turn-On Delay	0.5 VI to 0.5 VO			1.0	µs
tPHL	Turn-Off Delay	0.5 VI to 0.5 VO			1.0	µs
IR	Clamp Diode	VR = 50V (Figure 7 )TA = 25ÊC			50	µA
	Leakage Current	TA = 85ÊC			100	µA
VF	Clamp Diode	IF = 350 mA (Figure 8 )		1.7	2.0	V
	Forward Voltage

Note 1: ªAbsolute Maximum Ratingsº are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices should be operated at these limits. The tables of ªElectrical Characteristicsº provide conditions for actual device operation.

Note 2: All limits apply to the complete Darlington series except as specified for a single device type.

Note 3: Under normal operating conditions these units will sustain 350 mA per output with VCE (Sat) = 1.6V at 70ÊC with a pulse width of 20 ms and a duty cycle of 30%.

Note 4: The II(OFF) current limit guaranteed against partial turn-on of the output.

Note 5: The VI(ON) voltage limit guarantees a minimum output sink current per the specified test conditions.

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