Fairchild Semiconductor MMBD1403A, MMBD1404A, MMBD1401A, MMBD1405A Datasheet

MMBD1401A / 1403A / 1404A / 1405A

																		CONNECTION				DIAGRAMS
				3											1401A				3			3								1403A
3			A29																	2 NC
								1														1							2
		1				2									1404A				3			3								1405A
2

SOT-23	1		MARKING
		MMBD1401A	A29	MMBD1404A	A33
		MMBD1403A	A32	MMBD1405A	A34	1	2	1	2

High Voltage General Purpose Diode

Sourced from Process 2V.

Absolute Maximum Ratings*		TA = 25°C unless otherwise noted
Symbol	Parameter		Value	Units
WIV	Working Inverse Voltage		175	V
IO	Average Rectified Current		200	mA
IF	DC Forward Current		600	mA
if	Recurrent Peak Forward Current		700	mA
if(surge)	Peak Forward Surge Current
	Pulse width = 1.0 second		1.0	A
	Pulse width = 1.0 microsecond		2.0	A
Tstg	Storage Temperature Range		-55 to +150	°C
TJ	Operating Junction Temperature		150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)These ratings are based on a maximum junction temperature of 150 degrees C.

2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics		TA = 25°C unless otherwise noted
Symbol	Characteristic			Max	Units
				MMBD1401A-1405A*
PD	Total Device Dissipation			350	mW
	Derate above 25°C			2.8	mW/°C
RθJA	Thermal Resistance, Junction to Ambient			357	°C/W

*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2

1405A / 1404A / 1403A / MMBD1401A

ã1999 Fairchild Semiconductor Corporation	MMBD1401A-1405A, Rev. A

High Voltage General Purpoise Diode

(continued)

Electrical Characteristics		TA = 25°C unless otherwise noted
Symbol	Parameter		Test Conditions	Min	Max	Units
BV	Breakdown Voltage		IR = 100 μA	250		V
IR	Reverse Current		VR = 120 V		40	nA
			VR = 175 V		100	nA
VF	Forward Voltage		IF = 10 mA		800	mV
			IF = 50 mA	760	920	mV
	MMBD1401A / 1403A		IF = 200 mA		1.1	V
	MMBD1404A / 1405A		IF = 200 mA		1.0	V
	MMBD1401A / 1403A		IF = 300 mA		1.25	V
	MMBD1404A / 1405A		IF = 300 mA		1.1	V
CO	Diode Capacitance		VR = 0, f = 1.0 MHz		2.0	pF
TRR	Reverse Recovery Time		IF = IR = 30 mA,		50	nS
			IRR = 1.0 mA, RL = 100Ω

Typical Characteristics

REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA

VOLTAGE (V)	325	Ta= 25°C
- REVERSE	300
R
R
V
V	275
		5	10	20	30	50	100
	3

IR - REVERSE CURRENT (uA)

REVERSE CURRENT vs REVERSE VOLTAGE

(nA)			IR - 55 to 205 V
	50	Ta= 25°C
CURRENT	40
	30
- REVERSE	20
	10
	0
R
I	55	75	95	115	135	155	175 195

V R - REVERSE VOLTAGE (V)

GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature

REVERSE CURRENT vs REVERSE VOLTAGE

(nA)		IR - 180 to 255 V
	100	Ta= 25°C
CURRENT	90
	80
	70
REVERSE	60
	30
	50
	40
-	20
RR			200	220	240	255
I	180
I
		VR	- REVERSE VOLTAGE (V)
		GENERAL RULE: The Reverse Current of a diode will approximately
		double for every ten Degree C increase in Temperature

FORWARD VOLTAGE vs FORWARD CURRENT VF - 1.0 to 100 uA

(mV)	450	Ta= 25°C
VOLTAGE	400
	350
- FORWARD
	300
	250
F
F
V
	1	2	3	5	10	20	30	50	100

IF - FORWARD CURRENT (uA)

1405A / 1404A / 1403A / MMBD1401A

MMBD1401A-1405A, Rev. A