Fairchild Semiconductor MOC213-M, MOC212-M, MOC211-M Datasheet

SMALL OUTLINE OPTOCOUPLERS

TRANSISTOR OUTPUT

MOC211-M	MOC212-M	MOC213-M

DESCRIPTION

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through-the-board mounting.

FEATURES

•UL Recognized (File #E90700, volume 2)

•VDE Recognized (File #136616) (add option ‘V’ for VDE approval, e.g., MOC211V-M)

•Convenient Plastic SOIC-8 Surface Mountable Package Style

•Standard SOIC-8 Footprint, with 0.050" Lead Spacing

•Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering

•High Input-Output Isolation of 2500 VAC(rms) Guaranteed

•Minimum BVCEO of 30V guaranteed

APPLICATIONS

•General Purpose Switching Circuits

•Interfacing and coupling systems of different potentials and impedances

•Regulation Feedback Circuits

•Monitor and Detection Circuits

ANODE 1	8	N/C
CATHODE 2	7	BASE
N/C 3	6	COLLECTOR
N/C 4	5	EMITTER

© 2002 Fairchild Semiconductor Corporation

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SMALL OUTLINE OPTOCOUPLERS

TRANSISTOR OUTPUT

	MOC211-M	MOC212-M			MOC213-M
	ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise specified)
	Rating		Symbol		Value	Unit
	EMITTER
	Forward Current – Continuous		IF		60	mA
	Forward Current – Peak (PW = 100 µs, 120 pps)		IF (pk)		1.0	A
	Reverse Voltage		VR		6.0	V
	LED Power Dissipation @ TA = 25°C		PD		90	mW
	Derate above 25°C				0.8	mW/°C
	DETECTOR
	Collector-Emitter Voltage		VCEO		30	V
	Emitter-Collector Voltage		VECO		7.0	V
	Collector-Base Voltage		VCBO		70	V
	Collector Current-Continuous		IC		150	mA
	Detector Power Dissipation @ TA = 25°C		PD		150	mW
	Derate above 25°C				1.76	mW/°C
	TOTAL DEVICE
	Input-Output Isolation Voltage (1,2,3)		VISO		2500	Vac(rms)
	(f = 60 Hz, t = 1 min.)
	Total Device Power Dissipation @ TA = 25°C		PD		250	mW
	Derate above 25°C				2.94	mW/°C
	Ambient Operating Temperature Range		TA		-40 to +100	°C
	Storage Temperature Range		Tstg		-40 to +150	°C

© 2002 Fairchild Semiconductor Corporation

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SMALL OUTLINE OPTOCOUPLERS

TRANSISTOR OUTPUT

	MOC211-M	MOC212-M			MOC213-M
	ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified)
	Parameter	Test Conditions	Symbol	Min	Typ**	Max	Unit
	EMITTER
	Input Forward Voltage	(IF = 10 mA)	VF	—	1.15	1.5	V
	Reverse Leakage Current	(VR = 6.0 V)	IR	—	0.001	100	µA
	Input Capacitance		CIN	—	18	—	pF
	DETECTOR
	Collector-Emitter Dark Current	(VCE = 10 V, TA = 25°C)	ICEO1	—	1.0	50	nA
		(VCE = 10 V, TA = 100°C)	ICEO2	—	1.0	—	µA
	Collector-Emitter Breakdown Voltage	(IC = 100 µA)	BVCEO	30	90	—	V
	Emitter-Collector Breakdown Voltage	(IE = 100 µA)	BVECO	7.0	7.8	—	V
	Collector-Emitter Capacitance	(f = 1.0 MHz, VCE = 0)	CCE	—	7.0	—	pF
	COUPLED
	Collector-Output Current(4)	MOC211-M		20	65	—
		MOC212-M (IF = 10 mA, VCE = 10 V)	CTR	50	90	—	%
		MOC213-M		100	140	—
	Isolation Surge Voltage(1,2,3)	(60 Hz AC Peak, 1 min.)	VISO	2500	—	—	Vac(rms)
	Isolation Resistance(2)	(V = 500 V)	RISO	1011	—	—	Ω
	Collector-Emitter Saturation Voltage	(IC = 2.0 mA, IF = 10 mA)	VCE (sat)	—	0.15	0.4	V
	Isolation Capacitance(2)	(V = 0 V, f = 1 MHz)	CISO	—	0.2	—	pF
	Turn-On Time	(IC = 2.0 mA, VCC = 10 V, RL = 100 Ω)	ton	—	7.5	—	µs
		(Fig. 6)
	Turn-Off Time	(IC = 2.0 mA, VCC = 10 V, RL = 100 Ω)	toff	—	5.7	—	µs
		(Fig. 6)
	Rise Time	(IC = 2.0 mA, VCC = 10 V, RL = 100 Ω)	tr	—	3.2	—	µs
		(Fig. 6)
	Fall Time	(IC = 2.0 mA, VCC = 10 V, RL = 100 Ω)	tf	—	4.7	—	µs
		(Fig. 6)

** Typical values at TA = 25°C

1.Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.

2.For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.

3.VISO rating of 2500 VAC(rms) for t = 1 min. is equivalent to a rating of 3,000 VAC(rms) for t = 1 sec.

4.Current Transfer Ratio (CTR) = IC/IF x 100%.

© 2002 Fairchild Semiconductor Corporation

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