Fairchild Semiconductor MMBD1704A, MMBD1705, MMBD1705A, MMBD1704, MMBD1701A Datasheet

Discrete POWER & Signal

Technologies

MMBD1701/A / 1703/A / 1704/A / 1705/A

3

					85							CONNECTION						DIAGRAMS
3									1701				3					3								1703
				1		2								2 NC
									1									1								2
	2								1704				3					3								1705
				MARKING
SOT-23	1	MMBD1701 85			MMBD1701A 85A
		MMBD1703 87			MMBD1703A 87A
		MMBD1704 88			MMBD1704A 88A				1				2					1								2
		MMBD1705 89			MMBD1705A 89A

High Conductance Low Leakage Diode

Sourced from Process 1T.

Absolute Maximum Ratings*		TA = 25°C unless otherwise noted
Symbol	Parameter		Value	Units
WIV	Working Inverse Voltage		20	V
IO	Average Rectified Current		50	mA
IF	DC Forward Current		150	mA
if	Recurrent Peak Forward Current		150	mA
if(surge)	Peak Forward Surge Current
	Pulse width = 1.0 second		250	mA
Tstg	Storage Temperature Range		-55 to +150	°C
TJ	Operating Junction Temperature		150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)These ratings are based on a maximum junction temperature of 150 degrees C.

2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Thermal Characteristics		TA = 25°C unless otherwise noted
Symbol	Characteristic		Max	Units
			MMBD1701/A /1703/A-1705/A*
PD	Total Device Dissipation		350	mW
	Derate above 25°C		2.8	mW/°C
RqJA	Thermal Resistance, Junction to Ambient		357	°C/W

*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2

1705/A / 1704/A / 1703/A / MMBD1701/A

ã1997 Fairchild Semiconductor Corporation

MMBD1700 Rev. B