Fairchild Semiconductor MMBD1401, MMBD1404, MMBD1403, MMBD1405 Datasheet

Discrete POWER & Signal

Technologies

MMBD1401 / 1403 / 1404 / 1405

																CONNECTION							DIAGRAMS
							3
													1401					3					3								1403
3						29													2 NC
				1					2				1										1								2
													1404					3					3								1405
SOT-23	1	2		MARKING
		MMBD1401		29			MMBD1404					33
		MMBD1403		32			MMBD1405					34	1					2					1								2

High Voltage General Purpose Diode

Sourced from Process 1H.

Absolute Maximum Ratings*		TA = 25°C unless otherwise noted
Symbol	Parameter		Value	Units
WIV	Working Inverse Voltage		175	V
IO	Average Rectified Current		200	mA
IF	DC Forward Current		600	mA
if	Recurrent Peak Forward Current		700	mA
if(surge)	Peak Forward Surge Current
	Pulse width = 1.0 second		1.0	A
	Pulse width = 1.0 microsecond		2.0	A
Tstg	Storage Temperature Range		-55 to +150	°C
TJ	Operating Junction Temperature		150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)These ratings are based on a maximum junction temperature of 150 degrees C.

2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics		TA = 25°C unless otherwise noted
Symbol	Characteristic		Max	Units
			MMBD1401/1403/1404/1405*
PD	Total Device Dissipation		350	mW
	Derate above 25°C		2.8	mW/°C
RθJA	Thermal Resistance, Junction to Ambient		357	°C/W

*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2

1405 / 1404 / 1403 / MMBD1401

ã 1997 Fairchild Semiconductor Corporation

High Voltage General Purpoise Diode

(continued)

Electrical Characteristics		TA = 25°C unless otherwise noted
Symbol	Parameter		Test Conditions	Min	Max	Units
BV	Breakdown Voltage		IR = 100 μA	200		V
IR	Reverse Current		VR = 120 V		40	nA
			VR = 175 V		100	nA
VF	Forward Voltage		IF = 10 mA		800	mV
			IF = 50 mA	760	920	mV
			IF = 200 mA		1.0	V
			IF = 300 mA		1.1	V
CO	Diode Capacitance		VR = 0, f = 1.0 MHz		2.0	pF
TRR	Reverse Recovery Time		IF = IR = 30 mA,		50	nS
			IRR = 1.0 mA, RL = 100Ω

Typical Characteristics

REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA

VOLTAGE (V)	325	Ta= 25°C
- REVERSE	300
R
R
V
V	275
		5	10	20	30	50	100
	3

IR - REVERSE CURRENT (uA)

REVERSE CURRENT vs REVERSE VOLTAGE

(nA)			IR - 55 to 205 V
	50	Ta= 25°C
CURRENT	40
	30
- REVERSE	20
	10
	0
R
I	55	75	95	115	135	155	175 195

V R - REVERSE VOLTAGE (V)

GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature

REVERSE CURRENT vs REVERSE VOLTAGE

(nA)		IR - 180 to 255 V
	100	Ta= 25°C
CURRENT	90
	80
	70
REVERSE	60
	30
	50
	40
-	20
RR			200	220	240	255
I	180
I
		VR	- REVERSE VOLTAGE (V)
		GENERAL RULE: The Reverse Current of a diode will approximately
		double for every ten Degree C increase in Temperature

FORWARD VOLTAGE vs FORWARD CURRENT VF - 1.0 to 100 uA

(mV)	450	Ta= 25°C
VOLTAGE	400
	350
- FORWARD
	300
	250
F
F
V
	1	2	3	5	10	20	30	50	100

IF - FORWARD CURRENT (uA)

1405 / 1404 / 1403 / MMBD1401